UN221K Datasheet, Equivalent, Cross Reference Search
Type Designator: UN221K
SMD Transistor Code: 8P
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 150
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT23
SC59
UN221K Transistor Equivalent Substitute - Cross-Reference Search
UN221K Datasheet (PDF)
mun2211t.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MUN2211T1/DBias Resistor TransistorMUN2211T1NPN Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a singl
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nsvmmun2217lt1g.pdf
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mmun2211lt1-d.pdf
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mun2211t1.pdf
MUN2211T1 SeriesPreferred DevicesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two re
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mun2211t1g mun2212t1g mun2213t1g mun2214t1g mun2215t1g mun2216t1g mun2230t1g mun2231t1g mun2232t1g mun2233t1g mun2234t1g mun2236t1g mun2237t1g mun2240t1g mun2241t1g.pdf
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mun2211jt1g.pdf
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unr221x un221x series.pdf
Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing
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mmun2211.pdf
MMUN2211 SeriesCOLLECTOR3Bias Resistor Transistor3BASE R1NPN Silicon1R212P b Lead(Pb)-Free2EMITTERSOT-23MAXIMUM RATINGSRating SymbolValue Unit50 VdcCollector-Emitter Voltage VCEOCollector-Base Voltage 50 VdcVCBOCollector Current-Continuous I 100 mAdcCTHERMAL CHARACTERISTICSCharacteristics Symbol Value UnitTotal Device Dissipation FR-5 Board (1
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LESHAN RADIO COMPANY, LTD.Bas Resstor TransstorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkLMUN2211LT1G SeriesS-LMUN2211LT1G SeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias network3
kmun2214.pdf
ssSMD Type TranssiisttorrsSMD Transs iis ttoCsSMD Type Tran IorrSMDType Tra n ICSMD TypeSMD TypeSMD Type oTypeProduct specificationKMUN221 4SOT-23Unit: mm Features+0.12.9-0.1+0.10.4-0.1 Simplifies Circuit Design3 Reduces Board Space Reduces Component Count1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1PIN 3COLLECTORPIN 1R1 (
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Lead FreeRoHS CompliantMEI
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NPN Silicon Epitaxial Planar Transistorfor switching and interface circuit and drive circuit applications Resistor ValuesType R1 (K) R2 (K) MMUN2211 10 10 1.Base 2.Emitter 3.Collector MMUN2212 22 22 SOT-23 Plastic PackageMMUN2213 47 47 MMUN2214 10 47 Collector MMUN2215 10 (Output) MMUN2216 4.7 R1 Base (Input) MMUN2230 1 1 R2MMUN2231 2.2 2.2 Emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .