Справочник транзисторов. NSS20101JT1G

 

Биполярный транзистор NSS20101JT1G Даташит. Аналоги


   Наименование производителя: NSS20101JT1G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.255 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Граничная частота коэффициента передачи тока (ft): 350 MHz
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SC89
 

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NSS20101JT1G Datasheet (PDF)

 5.1. Size:105K  onsemi
nss20101j nsv20101j.pdfpdf_icon

NSS20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 5.2. Size:109K  onsemi
nss20101j.pdfpdf_icon

NSS20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 9.1. Size:82K  onsemi
nss20601cf8-d.pdfpdf_icon

NSS20101JT1G

NSS20601CF8T1G20 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 9.2. Size:202K  onsemi
nss20200dmt.pdfpdf_icon

NSS20101JT1G

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 20 Volt, 2 AmpPNP Low VCE(sat) Transistors20 V, 2 ANSS20200DMT MARKINGDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6miniature surface mount devices featuring ultra low saturation voltageWDFN6AT MG2 5(VCE(sat)) and high current gain capability. These are designed for useCASE 506ANG3 41

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