NSS20101JT1G. Аналоги и основные параметры

Наименование производителя: NSS20101JT1G

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.255 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 350 MHz

Статический коэффициент передачи тока (hFE): 200

Корпус транзистора: SC89

 Аналоги (замена) для NSS20101JT1G

- подборⓘ биполярного транзистора по параметрам

 

NSS20101JT1G даташит

 5.1. Size:105K  onsemi
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NSS20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

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NSS20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

 9.1. Size:82K  onsemi
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NSS20101JT1G

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 9.2. Size:202K  onsemi
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NSS20101JT1G

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 20 Volt, 2 Amp PNP Low VCE(sat) Transistors 20 V, 2 A NSS20200DMT MARKING DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AT MG 2 5 (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN G 3 4 1

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