NSS20101JT1G Todos los transistores

 

NSS20101JT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS20101JT1G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.255 W
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 1 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 350 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SC89

 Búsqueda de reemplazo de transistor bipolar NSS20101JT1G

 

NSS20101JT1G Datasheet (PDF)

 5.1. Size:105K  onsemi
nss20101j nsv20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

 5.2. Size:109K  onsemi
nss20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

 9.1. Size:82K  onsemi
nss20601cf8-d.pdf pdf_icon

NSS20101JT1G

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 9.2. Size:202K  onsemi
nss20200dmt.pdf pdf_icon

NSS20101JT1G

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 20 Volt, 2 Amp PNP Low VCE(sat) Transistors 20 V, 2 A NSS20200DMT MARKING DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AT MG 2 5 (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN G 3 4 1

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History: CHV1590A | NSDU10 | CHT857BTPTR | CHDTC124TEGP | CIL195D | DZT851 | NSBC114YPDP6T5G

 

 
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