NSS20101JT1G Todos los transistores

 

NSS20101JT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS20101JT1G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.255 W
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 1 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 350 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SC89
 

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NSS20101JT1G Datasheet (PDF)

 5.1. Size:105K  onsemi
nss20101j nsv20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 5.2. Size:109K  onsemi
nss20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 9.1. Size:82K  onsemi
nss20601cf8-d.pdf pdf_icon

NSS20101JT1G

NSS20601CF8T1G20 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 9.2. Size:202K  onsemi
nss20200dmt.pdf pdf_icon

NSS20101JT1G

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 20 Volt, 2 AmpPNP Low VCE(sat) Transistors20 V, 2 ANSS20200DMT MARKINGDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6miniature surface mount devices featuring ultra low saturation voltageWDFN6AT MG2 5(VCE(sat)) and high current gain capability. These are designed for useCASE 506ANG3 41

Otros transistores... NSS12201L , NSS12500UW3 , NSS12501UW3 , NSS12601CF8 , NSS1C200 , NSS1C200L , NSS1C201LT1G , NSS1C201MZ4T1G , 2SC828 , NSS20200L , NSS20201L , NSS20201MR6T1G , NSS20300MR6T1G , NSS20500UW3 , NSS20501UW3 , NSS20601CF8 , NSS30070MR6T1G .

 

 
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