NSS20101JT1G Specs and Replacement

Type Designator: NSS20101JT1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.255 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 1 A

Electrical Characteristics

Transition Frequency (ft): 350 MHz

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SC89

 NSS20101JT1G Substitution

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NSS20101JT1G datasheet

 5.1. Size:105K  onsemi

nss20101j nsv20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is... See More ⇒

 5.2. Size:109K  onsemi

nss20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is... See More ⇒

 9.1. Size:82K  onsemi

nss20601cf8-d.pdf pdf_icon

NSS20101JT1G

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa... See More ⇒

 9.2. Size:202K  onsemi

nss20200dmt.pdf pdf_icon

NSS20101JT1G

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 20 Volt, 2 Amp PNP Low VCE(sat) Transistors 20 V, 2 A NSS20200DMT MARKING DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AT MG 2 5 (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN G 3 4 1... See More ⇒

Detailed specifications: NSS12201L, NSS12500UW3, NSS12501UW3, NSS12601CF8, NSS1C200, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, 2SC2383, NSS20200L, NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G, NSS20500UW3, NSS20501UW3, NSS20601CF8, NSS30070MR6T1G

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