All Transistors. NSS20101JT1G Datasheet

 

NSS20101JT1G Datasheet and Replacement


   Type Designator: NSS20101JT1G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.255 W
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Collector Current |Ic max|: 1 A
   Transition Frequency (ft): 350 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SC89
 

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NSS20101JT1G Datasheet (PDF)

 5.1. Size:105K  onsemi
nss20101j nsv20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 5.2. Size:109K  onsemi
nss20101j.pdf pdf_icon

NSS20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 9.1. Size:82K  onsemi
nss20601cf8-d.pdf pdf_icon

NSS20101JT1G

NSS20601CF8T1G20 V, 8.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 9.2. Size:202K  onsemi
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NSS20101JT1G

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 20 Volt, 2 AmpPNP Low VCE(sat) Transistors20 V, 2 ANSS20200DMT MARKINGDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6miniature surface mount devices featuring ultra low saturation voltageWDFN6AT MG2 5(VCE(sat)) and high current gain capability. These are designed for useCASE 506ANG3 41

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KT361D1 | BSV29 | BCW10L | HA7510 | MMUN2230LT1 | 2SA1774Q | A747

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