DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS5480X80 V, 4 APNP low VCEsat (BISS) transistorProduct specification 2004 Nov 08Supersedes data of 2004 Jun 8Philips Semiconductors Product specification80 V, 4 APBSS5480XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNI

PBSS5440D40 V PNP low VCEsat (BISS) transistorRev. 02 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.NPN complement: PBSS4440D.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector curr

PBSS5420D20 V, 4 A PNP low VCEsat (BISS) transistorRev. 02 29 September 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4420D.1.2 Features Very low collector-emitter saturation resistance Ultra low collect

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS5140V40 V low VCEsat PNP transistorProduct data sheet 2002 Mar 20Supersedes data of 2001 Oct 19NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5320T20 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 15Supersedes data of 2002 Aug 08NXP Semiconductors Product data sheet20 V, 3 A PBSS5320TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEsa

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS5120T20 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet20 V, 1 A PBSS5120TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5240T40 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 15Supersedes data of 2001 Oct 31NXP Semiconductors Product data sheet40 V, 2 A PBSS5240TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO c

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5520X20 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 08Supersedes data of 2004 Jun 23NXP Semiconductors Product data sheet20 V, 5 A PBSS5520XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5350T50 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 13Supersedes data of 2002 Aug 08NXP Semiconductors Product data sheet50 V, 3 A PBSS5350TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNITcorresponding low RCEsa

PBSS5612PA12 V, 6 A PNP low VCEsat (BISS) transistorRev. 01 7 May 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4612PA.1.2 Features and benefits

PBSS5160DS60 V, 1 A PNP/PNP low VCEsat (BISS) transistorRev. 03 9 October 2008 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a smallSOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160DS.1.2 Features Low collector-emitter saturation voltage VCEsat High c

PBSS5580PA80 V, 4 A PNP low VCEsat (BISS) transistorRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4580PA.1.2 Features and benefits

PBSS5630PA30 V, 6 A PNP low VCEsat (BISS) transistorRev. 01 19 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4630PA.1.2 Features and benefits

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5540X40 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jan 15NXP Semiconductors Product data sheet40 V, 5 A PBSS5540XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS5130T30 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Dec 12NXP Semiconductors Product data sheet30 V, 1 A PBSS5130TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

PBSS5140T40 V, 1 A PNP low VCEsat BISS transistorRev. 04 29 July 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4140T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

DISCRETE SEMICONDUCTORS DATA SHEETfpageMBD128PBSS5320D20 V low VCEsat PNP transistorProduct data sheet 2002 Jun 12NXP Semiconductors Product data sheet20 V low VCEsat PNP transistorPBSS5320DFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitter voltage -20 V Improved

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5350X50 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Nov 21NXP Semiconductors Product data sheet50 V, 3 A PBSS5350XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

PBSS5620PA20 V, 6 A PNP low VCEsat (BISS) transistorRev. 01 13 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4620PA.1.2 Features and benefits

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS5140TPNP BISS transistorProduct specification 2000 Nov 16Philips Semiconductors Product specificationPNP BISS transistor PBSS5140TFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low collector-emitter saturation voltage ensures1 basereduced power consumption.2 emitter3 collectorAPPLICATIONS

PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 18 July 2008 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links assh

DISCRETE SEMICONDUCTORS DATA SHEETageM3D102PBSS5140U40 V low VCEsat PNP transistorProduct data sheet 2001 Jul 20Supersedes data of 2001 Mar 27NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitte

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D302PBSS5350DPNP transistorProduct specification 2000 Mar 08Philips Semiconductors Product specificationPNP transistor PBSS5350DFEATURES PINNING High current capabilitiesPIN DESCRIPTION Low VCEsat.1 collector2 collectorAPPLICATIONS3 base Heavy duty battery powered equipment (Automotive, 4 emitterT

DISCRETE SEMICONDUCTORS DATA SHEETageM3D088PBSS5220T20 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Dec 18NXP Semiconductors Product data sheet20 V, 2 A PBSS5220TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability: IC and I

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5320X20 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Nov 27NXP Semiconductors Product data sheet20 V, 3 A PBSS5320XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5330X30 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 03Supersedes data of 2003 Nov 28NXP Semiconductors Product data sheet30 V, 3 A PBSS5330XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

PBSS5350D50 V, 3 A PNP low VCEsat (BISS) transistorRev. 6 28 June 2011 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5250X50 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet50 V, 2 A PBSS5250XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

PBSS5560PA60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 21 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4560PA.1.2 Features and benefits

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS5540Z40 V low VCEsat PNP transistorProduct data sheet 2001 Sep 21Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilityVCEO emitter-collect

PBSS5160U60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 2 October 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very smallSOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160U.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4330PA.1.2 Features and benefits

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PBSS5540ZPNP TransistorProduct specification 2000 Oct 25Supersedes data of 1999 Aug 04Philips Semiconductors Product specificationPNP Transistor PBSS5540ZFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 collectorAPPLICATIONS3 emitter Heavy duty battery powered equip

PBSS5130PAP30 V, 1 A PNP/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN.2. Features and benefits Very low collect

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORSDATA SHEETgeM3D088PBSS5230T30 V, 2 APNP low VCEsat (BISS) transistorProduct specification 2003 Dec 18Philips Semiconductors Product specification30 V, 2 APBSS5230TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability: IC

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor19 October 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:PBSS4240X.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H

PBSS5160QA60 V, 1 A PNP low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4160QA.2. Features and benefits Very low collector-emitter

PBSS5360Z60 V, 3 A PNP low VCEsat (BISS) transistor19 February 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4360Z.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capa

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5230QA30 V, 2 A PNP low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4230QA.2. Features and benefits Very low collector-emitter

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5220V20 V, 2 A PNP low VCEsat (BISS) transistorRev. 03 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.NPN complement: PBSS4220V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capabilit

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5230PAP30 V, 2 A PNP/PNP low VCEsat (BISS) transistor11 January 2013 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN.2. Features and benefits Very low collecto

PBSS5112PAP120 V, 1 A PNP/PNP low VCEsat (BISS) transistor30 November 2012 Product data sheet1. Product profile1.1 General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.1.2 Features and benefit

PBSS5350SS50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistorRev. 01 3 April 2007 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP NamePBSS5350S

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5160PAP60 V, 1 A PNP/PNP low VCEsat (BISS) transistor23 January 2013 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN.2. Features and benefits Very low collecto

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5540X40 V, 5 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jan 15NXP Semiconductors Product data sheet40 V, 5 A PBSS5540XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5255PAPS55V, 2A PNP/PNP low VCEsat (BISS) double transistor11 December 2015 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.2. Features and benefits Very low collector-emitter sat

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PBSS5350Z50 V low VCEsat PNP transistorProduct data sheet 2003 May 13Supersedes data of 2003 Jan 20NXP Semiconductors Product data sheet50 V low VCEsat PNP transistorPBSS5350ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High collector current capabili

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5260QA60 V, 1.7 A PNP low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4260QA.2. Features and benefits Very low collector-emitte

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5130QA30 V, 1 A PNP low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4130QA.2. Features and benefits Very low collector-emitter

PBSS5220PAPS20V, 2 A PNP/PNP low VCEsat (BISS) double transistor14 December 2015 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4220PANS2. Features and benefits

DISCRETE SEMICONDUCTORSDATA SHEETgeM3D088PBSS5250T50 V, 2 APNP low VCEsat (BISS) transistorProduct specification 2003 Oct 09Philips Semiconductors Product specification50 V, 2 APBSS5250TPNP low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEsatVCEO collector-emitter voltage -50 V

PBSS5330PAS30 V, 3 A PNP low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.NPN complement: PBSS4330PAS2. F

PBSS5240Z40 V, 2 A PNP low VCEsat (BISS) transistor15 October 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4240Z2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

PBSS5160T60 V, 1 A PNP low VCEsat (BISS) transistorRev. 04 15 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4160T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5350TH50 V, 3 A PNP low VCEsat (BISS) transistor21 June 2017 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collect

DISCRETE SEMICONDUCTORS DATA SHEETfpageMBD128PBSS5240Y40 V low VCEsat PNP transistorProduct data sheet 2002 Feb 28Supersedes data of 2001 Oct 24NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit

PBSS5160V60 V, 1 A PNP low VCEsat (BISS) transistorRev. 03 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement: PBSS4160V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5320X20 V, 3 A PNP low VCEsat (BISS) transistor27 May 2019 Product data sheet1. General descriptionPNP low VCEsat transistor in a medium power flat lead SOT89 plastic package.NPN complement: PBSS4320X2. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency le

PBSS5360PAS60 V, 3A PNP low VCEsat (BISS) transistor12 October 2015 Product data sheet1. General descriptionPNP low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in anultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD)plastic package with medium power capability and visible and soldarable side pads.NPN complement: PBSS4360PAS2. Fe

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5350D50 V, 3 A PNP low VCEsat (BISS) transistorRev. 6 28 June 2011 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5250X50 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet50 V, 2 A PBSS5250XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5250TH50 V, 2 A PNP low VCEsat (BISS) transistor9 August 2017 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collec

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS5540Z40 V low VCEsat PNP transistorProduct data sheet 2001 Sep 21Supersedes data of 2001 Jan 26NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilityVCEO emitter-collect

PBSS5260PAPS60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor15 December 2015 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4260PANS2. Features and benefits

PBSS5260PAP60 V, 2 A PNP/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.2. Features and benefits Very low collect

PBSS5360X60 V, 3 A PNP low VCEsat (BISS) transistor3 July 2017 Product data sheet1. General descriptionPNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4360X2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current cap

PBSS5160PAPS60 V, 1 A PNP/PNP low VCEsat (BISS) transistor24 November 2014 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.2. Features and benefits Very low collector-emitter saturation volt

PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.NPN complement: PBSS4330PA.2. Features and benefits Low collector-emitter saturatio

PBSS5140S(BR3CG5140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching / Applications

SMD Type TransistorsPNP TransistorsPBSS5240V (KBSS5240V) SOT523-6(SOT666) Features4 Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM53 High collector current gain (hFE) at high IC6 2 High efficiency leading to reduced heat generation1.collector2.collector Reduced printed-circuit board area requireme

SMD Type TransistorsPNP TransistorsPBSS5540Z (KBSS5540Z)1.70 0.1 Features Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation.0.42 0.10.46 0.1211.Base2.Collector33.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40

SMD Type TransistorsPNP TransistorsPBSS5350T (KBSS5350T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High collector current capability High collector current gain1 2 Improved efficiency due to reduced heat generation.+0.1+0.050.95-0.1 0.1-0.01 Low collector-emitter saturation voltage VCEsat and+0.11.9-0.1 corresponding low RCEsat

SMD Type TransistorsPNP TransistorsPBSS5160T-HF (KBSS5160T-HF)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required

SMD Type TransistorsPNP TransistorsPBSS5160T (KBSS5160T)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM1 2+0.1+0.050.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01+0.11.9 -0.1 Reduces printed-circuit board area required1.Base2.E

SMD Type TransistorsPNP TransistorsPBSS5540Z (KBSS5540Z)Unit:mmSOT-2236.500.23.000.1 Features4 Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation.1 2 32, 40.2502.30 (typ)Gauge Plane11.Base 2.Collector0.700.133.Emitter4.60 (typ) 4.Collector Absolute M