PBSS5480X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5480X
Código: *1Z
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.55 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT89
Búsqueda de reemplazo de PBSS5480X
- Selecciónⓘ de transistores por parámetros
PBSS5480X datasheet
pbss5480x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product specification 2004 Nov 08 Supersedes data of 2004 Jun 8 Philips Semiconductors Product specification 80 V, 4 A PBSS5480X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operation SYMBOL PARAMETER MAX. UNI
pbss5440d.pdf
PBSS5440D 40 V PNP low VCEsat (BISS) transistor Rev. 02 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement PBSS4440D. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector curr
pbss5420d.pdf
PBSS5420D 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 29 September 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4420D. 1.2 Features Very low collector-emitter saturation resistance Ultra low collect
pbss5140v.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product data sheet 2002 Mar 20 Supersedes data of 2001 Oct 19 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll
pbss5320t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 15 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 20 V, 3 A PBSS5320T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsa
pbss5120t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS5120T 20 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 20 V, 1 A PBSS5120T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC
pbss5240t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5240T 40 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 15 Supersedes data of 2001 Oct 31 NXP Semiconductors Product data sheet 40 V, 2 A PBSS5240T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO c
pbss5350t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Jan 13 Supersedes data of 2002 Aug 08 NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat and SYMBOL PARAMETER MAX. UNIT corresponding low RCEsa
pbss5612pa.pdf
PBSS5612PA 12 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4612PA. 1.2 Features and benefits
pbss5160ds.pdf
PBSS5160DS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Rev. 03 9 October 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High c
pbss5580pa.pdf
PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4580PA. 1.2 Features and benefits
pbss5630pa.pdf
PBSS5630PA 30 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 19 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4630PA. 1.2 Features and benefits
pbss5540x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 5 A PBSS5540X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT
pbss5130t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Dec 12 NXP Semiconductors Product data sheet 30 V, 1 A PBSS5130T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili
pbss5140t.pdf
PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4140T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current
pbss5320d.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product data sheet 2002 Jun 12 NXP Semiconductors Product data sheet 20 V low VCEsat PNP transistor PBSS5320D FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage -20 V Improved
pbss5350x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5350X 50 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Nov 21 NXP Semiconductors Product data sheet 50 V, 3 A PBSS5350X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5620pa.pdf
PBSS5620PA 20 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4620PA. 1.2 Features and benefits
pbss5140t 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5140T PNP BISS transistor Product specification 2000 Nov 16 Philips Semiconductors Product specification PNP BISS transistor PBSS5140T FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low collector-emitter saturation voltage ensures 1 base reduced power consumption. 2 emitter 3 collector APPLICATIONS
pbss5160t n.pdf
PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 18 July 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as sh
pbss5140u.pdf
DISCRETE SEMICONDUCTORS DATA SHEET age M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product data sheet 2001 Jul 20 Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitte
pbss5350d 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D302 PBSS5350D PNP transistor Product specification 2000 Mar 08 Philips Semiconductors Product specification PNP transistor PBSS5350D FEATURES PINNING High current capabilities PIN DESCRIPTION Low VCEsat. 1 collector 2 collector APPLICATIONS 3 base Heavy duty battery powered equipment (Automotive, 4 emitter T
pbss5220t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Dec 18 NXP Semiconductors Product data sheet 20 V, 2 A PBSS5220T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and I
pbss5320x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Nov 27 NXP Semiconductors Product data sheet 20 V, 3 A PBSS5320X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5330x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 03 Supersedes data of 2003 Nov 28 NXP Semiconductors Product data sheet 30 V, 3 A PBSS5330X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5350d.pdf
PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4350D 1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified
pbss5250x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5560pa.pdf
PBSS5560PA 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4560PA. 1.2 Features and benefits
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect
pbss5160u.pdf
PBSS5160U 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160U. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
pbss5330pa.pdf
PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 1.2 Features and benefits
pbss5540z 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5540Z PNP Transistor Product specification 2000 Oct 25 Supersedes data of 1999 Aug 04 Philips Semiconductors Product specification PNP Transistor PBSS5540Z FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 collector APPLICATIONS 3 emitter Heavy duty battery powered equip
pbss5130pap.pdf
PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4130PANP. NPN/NPN complement PBSS4130PAN. 2. Features and benefits Very low collect
pbss5320t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5230t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PBSS5230T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC
pbss5120t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5240x.pdf
PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4240X. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H
pbss5160qa.pdf
PBSS5160QA 60 V, 1 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4160QA. 2. Features and benefits Very low collector-emitter
pbss5360z.pdf
PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4360Z. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capa
pbss5240t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5230qa.pdf
PBSS5230QA 30 V, 2 A PNP low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4230QA. 2. Features and benefits Very low collector-emitter
pbss5240v.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5220v.pdf
PBSS5220V 20 V, 2 A PNP low VCEsat (BISS) transistor Rev. 03 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. NPN complement PBSS4220V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capabilit
pbss5520x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5230pap.pdf
PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4230PANP. NPN/NPN complement PBSS4230PAN. 2. Features and benefits Very low collecto
pbss5112pap.pdf
PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 30 November 2012 Product data sheet 1. Product profile 1.1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4112PANP. NPN/NPN complement PBSS4112PAN. 1.2 Features and benefit
pbss5350ss.pdf
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/PNP NPN/NPN complement complement NXP Name PBSS5350S
pbss5350t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5612pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5160ds.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5630pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5160pap.pdf
PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4160PANP. NPN/NPN complement PBSS4160PAN. 2. Features and benefits Very low collecto
pbss5540x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2004 Jan 15 NXP Semiconductors Product data sheet 40 V, 5 A PBSS5540X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT
pbss5130t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5140t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5255paps.pdf
PBSS5255PAPS 55V, 2A PNP/PNP low VCEsat (BISS) double transistor 11 December 2015 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits Very low collector-emitter sat
pbss5350z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product data sheet 2003 May 13 Supersedes data of 2003 Jan 20 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High collector current capabili
pbss5320d.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5260qa.pdf
PBSS5260QA 60 V, 1.7 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4260QA. 2. Features and benefits Very low collector-emitte
pbss5350x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5620pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5130qa.pdf
PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4130QA. 2. Features and benefits Very low collector-emitter
pbss5220paps.pdf
PBSS5220PAPS 20V, 2 A PNP/PNP low VCEsat (BISS) double transistor 14 December 2015 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4220PANS 2. Features and benefits
pbss5250t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PBSS5250T PNP low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEsat VCEO collector-emitter voltage -50 V
pbss5330pas.pdf
PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement PBSS4330PAS 2. F
pbss5240z.pdf
PBSS5240Z 40 V, 2 A PNP low VCEsat (BISS) transistor 15 October 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4240Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi
pbss5160t.pdf
PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4160T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
pbss5140u.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5350th.pdf
PBSS5350TH 50 V, 3 A PNP low VCEsat (BISS) transistor 21 June 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collect
pbss5240y.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product data sheet 2002 Feb 28 Supersedes data of 2001 Oct 24 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5240Y FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emit
pbss5160v.pdf
PBSS5160V 60 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package. NPN complement PBSS4160V. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficie
pbss5220t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5320x.pdf
PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor 27 May 2019 Product data sheet 1. General description PNP low VCEsat transistor in a medium power flat lead SOT89 plastic package. NPN complement PBSS4320X 2. Features and benefits SOT89 (SC-62) package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Higher efficiency le
pbss5360pas.pdf
PBSS5360PAS 60 V, 3A PNP low VCEsat (BISS) transistor 12 October 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough in a Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement PBSS4360PAS 2. Fe
pbss5330x.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5350d.pdf
PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4350D 1.2 Features and benefits Low collector-emitter saturation AEC-Q101 qualified
pbss5250x.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 04 Supersedes data of 2003 Jun 17 NXP Semiconductors Product data sheet 50 V, 2 A PBSS5250X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
pbss5560pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss5250th.pdf
PBSS5250TH 50 V, 2 A PNP low VCEsat (BISS) transistor 9 August 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collec
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect
pbss5260paps.pdf
PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor 15 December 2015 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement PBSS4260PANS 2. Features and benefits
pbss5260pap.pdf
PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4260PANP. NPN/NPN complement PBSS4260PAN. 2. Features and benefits Very low collect
pbss5360x.pdf
PBSS5360X 60 V, 3 A PNP low VCEsat (BISS) transistor 3 July 2017 Product data sheet 1. General description PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4360X 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current cap
pbss5160paps.pdf
PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor 24 November 2014 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits Very low collector-emitter saturation volt
pbss5330pa.pdf
PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 2. Features and benefits Low collector-emitter saturatio
pbss5240v.pdf
SMD Type Transistors PNP Transistors PBSS5240V (KBSS5240V) SOT523-6(SOT666) Features 4 Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 5 3 High collector current gain (hFE) at high IC 6 2 High efficiency leading to reduced heat generation 1.collector 2.collector Reduced printed-circuit board area requireme
pbss5540z-89.pdf
SMD Type Transistors PNP Transistors PBSS5540Z (KBSS5540Z) 1.70 0.1 Features Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. 0.42 0.1 0.46 0.1 2 1 1.Base 2.Collector 3 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40
pbss5350t.pdf
SMD Type Transistors PNP Transistors PBSS5350T (KBSS5350T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High collector current capability High collector current gain 1 2 Improved efficiency due to reduced heat generation. +0.1 +0.05 0.95-0.1 0.1-0.01 Low collector-emitter saturation voltage VCEsat and +0.1 1.9-0.1 corresponding low RCEsat
pbss5160t-hf.pdf
SMD Type Transistors PNP Transistors PBSS5160T-HF (KBSS5160T-HF) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required
pbss5160t.pdf
SMD Type Transistors PNP Transistors PBSS5160T (KBSS5160T) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM 1 2 +0.1 +0.05 0.95 -0.1 High efficiency, reduces heat generation 0.1 -0.01 +0.1 1.9 -0.1 Reduces printed-circuit board area required 1.Base 2.E
pbss5540z.pdf
SMD Type Transistors PNP Transistors PBSS5540Z (KBSS5540Z) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. 1 2 3 2, 4 0.250 2.30 (typ) Gauge Plane 1 1.Base 2.Collector 0.70 0.1 3 3.Emitter 4.60 (typ) 4.Collector Absolute M
Otros transistores... PBSS5330X, PBSS5350D, PBSS5350SS, PBSS5350T, PBSS5350X, PBSS5350Z, PBSS5420D, PBSS5440D, 2SD669A, PBSS5520X, PBSS5540X, PBSS5540Z, PBSS5560PA, PBSS5580PA, PBSS5612PA, PBSS5620PA, PBSS5630PA
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor | 2sa913 | 2sc711 datasheet