PBSS5540Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5540Z
Código: PB5540
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.35 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Capacitancia de salida (Cc): 105 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de PBSS5540Z
PBSS5540Z PDF detailed specifications
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect... See More ⇒
pbss5540z 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5540Z PNP Transistor Product specification 2000 Oct 25 Supersedes data of 1999 Aug 04 Philips Semiconductors Product specification PNP Transistor PBSS5540Z FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 collector APPLICATIONS 3 emitter Heavy duty battery powered equip... See More ⇒
pbss5540z.pdf
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect... See More ⇒
pbss5540z.pdf
SMD Type Transistors PNP Transistors PBSS5540Z (KBSS5540Z) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. 1 2 3 2, 4 0.250 2.30 (typ) Gauge Plane 1 1.Base 2.Collector 0.70 0.1 3 3.Emitter 4.60 (typ) 4.Collector Absolute M... See More ⇒
Otros transistores... PBSS5350T , PBSS5350X , PBSS5350Z , PBSS5420D , PBSS5440D , PBSS5480X , PBSS5520X , PBSS5540X , 2SC2240 , PBSS5560PA , PBSS5580PA , PBSS5612PA , PBSS5620PA , PBSS5630PA , PBSS8110D , PBSS8110T , PBSS8110X .
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