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PBSS5540Z PDF Specs and Replacement


   Type Designator: PBSS5540Z
   SMD Transistor Code: PB5540
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 1.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 105 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT223
 

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PBSS5540Z PDF detailed specifications

 ..1. Size:144K  philips
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PBSS5540Z

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect... See More ⇒

 ..2. Size:67K  philips
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PBSS5540Z

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5540Z PNP Transistor Product specification 2000 Oct 25 Supersedes data of 1999 Aug 04 Philips Semiconductors Product specification PNP Transistor PBSS5540Z FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 collector APPLICATIONS 3 emitter Heavy duty battery powered equip... See More ⇒

 ..3. Size:144K  nxp
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PBSS5540Z

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS5540Z 40 V low VCEsat PNP transistor Product data sheet 2001 Sep 21 Supersedes data of 2001 Jan 26 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capability VCEO emitter-collect... See More ⇒

 ..4. Size:1554K  kexin
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PBSS5540Z

SMD Type Transistors PNP Transistors PBSS5540Z (KBSS5540Z) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation. 1 2 3 2, 4 0.250 2.30 (typ) Gauge Plane 1 1.Base 2.Collector 0.70 0.1 3 3.Emitter 4.60 (typ) 4.Collector Absolute M... See More ⇒

Detailed specifications: PBSS5350T , PBSS5350X , PBSS5350Z , PBSS5420D , PBSS5440D , PBSS5480X , PBSS5520X , PBSS5540X , 2SC2240 , PBSS5560PA , PBSS5580PA , PBSS5612PA , PBSS5620PA , PBSS5630PA , PBSS8110D , PBSS8110T , PBSS8110X .

History: 2G415

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