Биполярный транзистор RN2107MFV - описание производителя. Основные параметры. Даташиты.
Наименование производителя: RN2107MFV
Маркировка: YH.
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 0.9 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOT723 VESM
Аналоги (замена) для RN2107MFV
RN2107MFV Datasheet (PDF)
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