All Transistors. RN2107MFV Datasheet

 

RN2107MFV Datasheet and Replacement


   Type Designator: RN2107MFV
   SMD Transistor Code: YH.
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.9 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT723 VESM
 

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RN2107MFV Datasheet (PDF)

 ..1. Size:194K  toshiba
rn2107mfv rn2108mfv rn2109mfv.pdf pdf_icon

RN2107MFV

RN2107MFVRN2109MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107MFV,RN2108MFV,RN2109MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.80.05enabling the ma

 8.1. Size:177K  toshiba
rn2107 rn2108 rn2109.pdf pdf_icon

RN2107MFV

RN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107,RN2108,RN2109 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1107~RN1109 Equivalent Circuit and Bias Resister Values T

 8.2. Size:162K  toshiba
rn2107fs rn2108fs rn2109fs.pdf pdf_icon

RN2107MFV

RN2107FS~RN2109FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FS,RN2108FS,RN2109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equip

 8.3. Size:146K  toshiba
rn2107ft-rn2109ft.pdf pdf_icon

RN2107MFV

RN2107FT~RN2109FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107FT, RN2108FT, RN2109FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces p

Datasheet: RN2106ACT , RN2106CT , RN2106FS , RN2106MFV , RN2106 , RN2107ACT , RN2107CT , RN2107FS , 2SC2383Y , RN2107 , RN2108ACT , RN2108CT , RN2108FS , RN2108MFV , RN2108 , RN2109ACT , RN2109CT .

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