Справочник транзисторов. RN2110ACT

 

Биполярный транзистор RN2110ACT - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: RN2110ACT
   Маркировка: C9
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.08 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 0.9 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT883 CST3

 Аналоги (замена) для RN2110ACT

 

 

RN2110ACT Datasheet (PDF)

 ..1. Size:152K  toshiba
rn2110act rn2111act.pdf

RN2110ACT
RN2110ACT

RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication. Incorpora

 8.1. Size:102K  toshiba
rn2110-rn2111.pdf

RN2110ACT
RN2110ACT

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25C) Cha

 8.2. Size:163K  toshiba
rn2110mfv rn2111mfv.pdf

RN2110ACT
RN2110ACT

RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0

 8.3. Size:114K  toshiba
rn2110fs rn2111fs.pdf

RN2110ACT
RN2110ACT

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a

 8.4. Size:122K  toshiba
rn2110ft-rn2111ft.pdf

RN2110ACT
RN2110ACT

RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 8.5. Size:154K  toshiba
rn2110ct rn2111ct.pdf

RN2110ACT
RN2110ACT

RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110CT,RN2111CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 8.6. Size:109K  toshiba
rn2110f-rn2111f.pdf

RN2110ACT
RN2110ACT

RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F Equivalent Circuit Maximum Ratings (Ta = 25C

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