RN2110ACT Datasheet and Replacement
Type Designator: RN2110ACT
SMD Transistor Code: C9
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT883 CST3
RN2110ACT Transistor Equivalent Substitute - Cross-Reference Search
RN2110ACT Datasheet (PDF)
rn2110act rn2111act.pdf
RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Extra small package (CST3) is applicable for extra high density fabrication. Incorpora... See More ⇒
rn2110-rn2111.pdf
RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25 C) Cha... See More ⇒
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RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0... See More ⇒
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RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save a... See More ⇒
Datasheet: RN2108MFV , RN2108 , RN2109ACT , RN2109CT , RN2109FS , RN2109F , RN2109MFV , RN2109 , TIP142 , RN2110CT , RN2110FS , RN2110MFV , RN2110 , RN2111ACT , RN2111CT , RN2111FS , RN2111F .
History: RN2108MFV | K2108A | RN2108CT | RN1973 | GT762 | 2SC3510 | 2SC3891
Keywords - RN2110ACT transistor datasheet
RN2110ACT cross reference
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History: RN2108MFV | K2108A | RN2108CT | RN1973 | GT762 | 2SC3510 | 2SC3891
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