RN2110ACT Todos los transistores

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RN2110ACT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2110ACT

Código: C9

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.08 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hfe): 120

Empaquetado / Estuche: SOT883_CST3

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RN2110ACT Datasheet (PDF)

1.1. rn2110act rn2111act 090417.pdf Size:152K _toshiba

RN2110ACT
RN2110ACT

RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Unit: mm Inverter Circuit Applications 0.60.05 Interface Circuit Applications 0.50.03 Driver Circuit Applications 3 Extra small package (CST3) is applicable for extra high density fabrication. Incorporating a bias

4.1. rn2110ft-rn2111ft.pdf Size:122K _toshiba

RN2110ACT
RN2110ACT

RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count. Redu

4.2. rn2110mfv rn2111mfv.pdf Size:163K _toshiba

RN2110ACT
RN2110ACT

RN2110MFV,RN2111MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2110MFV,RN2111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Ultra-small package, suited to very high density mounting 1.20.05 Incorporating a bias resistor into the transistor reduces the number of parts, so 0.80

4.3. rn2110-rn2111.pdf Size:102K _toshiba

RN2110ACT
RN2110ACT

RN2110,RN2111 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110,RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110, RN1111 Equivalent Circuit Maximum Ratings (Ta = 25C) Charact

4.4. rn2110fs rn2111fs 071101.pdf Size:114K _toshiba

RN2110ACT
RN2110ACT

RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assemb

4.5. rn2110ct rn2111ct 090417.pdf Size:154K _toshiba

RN2110ACT
RN2110ACT

RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2110CT,RN2111CT Switching Applications Unit: mm Inverter Circuit Applications 0.60.05 Interface Circuit Applications 0.50.03 Driver Circuit Applications 3 Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the

4.6. rn2110f-rn2111f.pdf Size:109K _toshiba

RN2110ACT
RN2110ACT

RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1110F, RN1111F Equivalent Circuit Maximum Ratings (Ta = 25C)

Otros transistores... RN2108MFV , RN2108 , RN2109ACT , RN2109CT , RN2109FS , RN2109F , RN2109MFV , RN2109 , 2N3866 , RN2110CT , RN2110FS , RN2110MFV , RN2110 , RN2111ACT , RN2111CT , RN2111FS , RN2111F .

 


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Introduzca al menos 1 números o letras