Справочник транзисторов. 2N5770

 

Биполярный транзистор 2N5770 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N5770

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.625 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V

Макcимальный постоянный ток коллектора (Ic): 0.05 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 900 MHz

Ёмкость коллекторного перехода (Cc): 1.7 pf

Статический коэффициент передачи тока (hfe): 20

Корпус транзистора: TO92

Аналоги (замена) для 2N5770

 

 

2N5770 Datasheet (PDF)

1.1. 2n5770.pdf Size:295K _fairchild_semi

2N5770
2N5770

Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15

1.2. 2n5770.pdf Size:242K _cdil

2N5770
2N5770

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package C B E VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 15 V Collector Base Voltage VCBO 30 V VE

 5.1. 2n5771 mmbt5771.pdf Size:585K _fairchild_semi

2N5770
2N5770

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

5.2. 2n5771.pdf Size:708K _fairchild_semi

2N5770
2N5770

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

 5.3. 2n5772.pdf Size:28K _fairchild_semi

2N5770
2N5770

2N5772 NPN Switching Transistor • Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continued 300 mA TSTG Operating and Storage Junction Temperature Range -

5.4. 2n5780 2n5780 2n5777.pdf Size:57K _njs

2N5770



 5.5. 2n5777.pdf Size:57K _njs

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5.6. 2n5779 2n5779 2n5778.pdf Size:57K _njs

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5.7. 2n5778.pdf Size:57K _njs

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5.8. 2n5910 pn5910 2n5771.pdf Size:65K _central

2N5770

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.9. 2n3646 2n5772 pn3646.pdf Size:73K _central

2N5770

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.10. 2n5777.pdf Size:64K _advanced-semi

2N5770



Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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