2N5770 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5770  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 900 MHz

Capacitancia de salida (Cc): 1.7 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO92

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2N5770 datasheet

 ..1. Size:295K  fairchild semi
 2n5770.pdf pdf_icon

2N5770

Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15

 ..2. Size:242K  cdil
 2n5770.pdf pdf_icon

2N5770

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package C B E VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 15 V Collector Base Voltage VCBO 30 V VE

 9.1. Size:585K  fairchild semi
 2n5771 mmbt5771.pdf pdf_icon

2N5770

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

 9.2. Size:708K  fairchild semi
 2n5771.pdf pdf_icon

2N5770

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage

MOSTRAR MÁS

Otros transistores... 2N5763, 2N5764, 2N5765, 2N5766, 2N5767, 2N5768, 2N5769, 2N576A, 2SC945, 2N5771, 2N5772, 2N5773, 2N5774, 2N5775, 2N5776, 2N578, 2N5781