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2N5770 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N5770
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 15 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 900 MHz
   Capacitancia de salida (Cc): 1.7 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO92
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2N5770 Datasheet (PDF)

 ..1. Size:295K  fairchild semi
 2n5770.pdf pdf_icon

2N5770

Discrete POWER & SignalTechnologies2N5770C TO-92BENPN RF TransistorThis device is designed for use as RF amplifiers, oscillators andmultipliers with collector currents in the 1.0 mA to 30 mA range.Sourced from Process 43. See PN918 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15

 ..2. Size:242K  cdil
 2n5770.pdf pdf_icon

2N5770

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770TO-92Plastic PackageCBEVHF/UHF Amplifier Mixer and Oscillator ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 15 VCollector Base Voltage VCBO 30 VVE

 9.1. Size:585K  fairchild semi
 2n5771 mmbt5771.pdf pdf_icon

2N5770

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

 9.2. Size:708K  fairchild semi
 2n5771.pdf pdf_icon

2N5770

2N5771 MMBT5771CEC TO-92BBSOT-23EMark: 3RPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage

MOSTRAR MÁS

Otros transistores... 2N5763 , 2N5764 , 2N5765 , 2N5766 , 2N5767 , 2N5768 , 2N5769 , 2N576A , 2SC945 , 2N5771 , 2N5772 , 2N5773 , 2N5774 , 2N5775 , 2N5776 , 2N578 , 2N5781 .

History: 2N6364 | 2SC3110

 

 
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