2N5770 Datasheet. Specs and Replacement

Type Designator: 2N5770  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 900 MHz

Collector Capacitance (Cc): 1.7 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

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2N5770 datasheet

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2N5770

Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 ... See More ⇒

 ..2. Size:242K  cdil

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2N5770

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package C B E VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 15 V Collector Base Voltage VCBO 30 V VE... See More ⇒

 9.1. Size:585K  fairchild semi

 2n5771 mmbt5771.pdf pdf_icon

2N5770

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒

 9.2. Size:708K  fairchild semi

 2n5771.pdf pdf_icon

2N5770

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒

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Detailed specifications: 2N5763, 2N5764, 2N5765, 2N5766, 2N5767, 2N5768, 2N5769, 2N576A, 2SC945, 2N5771, 2N5772, 2N5773, 2N5774, 2N5775, 2N5776, 2N578, 2N5781

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