2SA1972. Аналоги и основные параметры
Наименование производителя: 2SA1972
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 35 MHz
Ёмкость коллекторного перехода (Cc): 18 pf
Статический коэффициент передачи тока (hFE): 140
Корпус транзистора: LSTM
Аналоги (замена) для 2SA1972
- подборⓘ биполярного транзистора по параметрам
2SA1972 даташит
8.2. Size:44K sanyo
2sa1973 2sc5310.pdf 

Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16
8.3. Size:60K nec
2sa1978.pdf 

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High f (in milimeters) T _ 2.8+0.2 f = 5.5 GHz TYP. T +0.1 S 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.15 21e CE C High speed switching characteristics Equivalent NPN transistor is the 2SC2
8.4. Size:58K nec
2sa1977.pdf 

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSION (in millimeters) _ 2.8+0.2 High f T +0.1 f = 8.5 GHz TYP. T 1.5 0.65 0.15 High gain S 2 = 12.0 dB TYP. @f = 1.0 GHz, V = -8 V, I = -20 mA 21e CE C High-speed switching characterstics 2 Equivalent NPN transistor
8.5. Size:223K auk
2sa1979uf.pdf 

2SA1979UF PNP Silicon Transistor Description PIN Connection Medium power amplifier 3 Features Large collector current IC=-500mA 1 Suitable for low-Voltage operation 2 because of its low saturation voltage Complementary pair with 2SC5342UF SOT-323F Ordering Information Type NO. Marking Package Code A 2SA1979UF SOT-323F Dev
8.7. Size:271K auk
2sa1979u.pdf 

2SA1979U PNP Silicon Transistor Description PIN Connection Medium power amplifier Features 3 Large collector current ICMax=-500mA Suitable for low-Voltage operation 1 2 because of its low saturation voltage Complementary pair with 2SC5342U SOT-323 Ordering Information Type NO. Marking Package Code A 2SA1979U SOT-323
8.8. Size:233K auk
2sa1979n.pdf 

2SA1979N Semiconductor Semiconductor PNP Silicon Transistor Description Medium power amplifier Features Large collector current IC = -500mA Low collector saturation voltage enabling low-voltage operation VCE(sat) = -0.25 Max. Complementary pair with 2SC5342N Ordering Information Type NO. Marking Package Code 2SA1979N A1979 TO-92N Outline Dimensio
8.9. Size:236K auk
2sa1979m.pdf 

2SA1979M Semiconductor Semiconductor PNP Silicon Transistor Description Medium power amplifier Features Large collector current ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342M Ordering Information Type NO. Marking Package Code 2SA1979M 1979 TO-92M Outline Dimensions unit mm
8.10. Size:225K auk
2sa1979.pdf 

2SA1979 Semiconductor Semiconductor PNP Silicon Transistor Description PIN Connection Medium power amplifier E Features B Large collector current ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage C Complementary pair with 2SC5342 TO-92 Ordering Information Type NO. Marking Package Code 2SA1979 A1979 TO-92
8.12. Size:694K kexin
2sa1979uf.pdf 

SMD Type Transistors PNP Transistors 2SA1979UF Features Large collector current ICMax=-500mA Complements to 2SC5342UF 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA
8.13. Size:955K kexin
2sa1971.pdf 

SMD Type Transistors PNP Transistors 2SA1971 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V 0.42 0.1 0.46 0.1 Marking A*L 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 V
Другие транзисторы: 2SA1934, 2SA1937, 2SA1939, 2SA1940, 2SA1941, 2SA1942, 2SA1962, 2SA1971, TIP127, 2SA1986, 2SA1987, 2SA2034, 2SA2056, 2SA2058, 2SA2059, 2SA2060, 2SA2061