2SA1972 Specs and Replacement

Type Designator: 2SA1972

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Collector Capacitance (Cc): 18 pF

Forward Current Transfer Ratio (hFE), MIN: 140

Noise Figure, dB: -

Package: LSTM

 2SA1972 Substitution

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2SA1972 datasheet

 ..1. Size:191K  toshiba

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2SA1972

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 8.1. Size:194K  toshiba

2sa1971.pdf pdf_icon

2SA1972

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 8.2. Size:44K  sanyo

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2SA1972

Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16... See More ⇒

 8.3. Size:60K  nec

2sa1978.pdf pdf_icon

2SA1972

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High f (in milimeters) T _ 2.8+0.2 f = 5.5 GHz TYP. T +0.1 S 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.15 21e CE C High speed switching characteristics Equivalent NPN transistor is the 2SC2... See More ⇒

Detailed specifications: 2SA1934, 2SA1937, 2SA1939, 2SA1940, 2SA1941, 2SA1942, 2SA1962, 2SA1971, TIP127, 2SA1986, 2SA1987, 2SA2034, 2SA2056, 2SA2058, 2SA2059, 2SA2060, 2SA2061

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