2SC5949 - описание и поиск аналогов

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector powe

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5949 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA2121 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit VCBO Collector-base voltage 200 V VCEO Collector-emitter voltage 200 V VEBO Emitter-base voltage 5 V Coll

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6 2.0 x 2.0 x 0.8

2SC5946 NPN Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 3 fT SSS 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.