All Transistors. 2SC5949 Datasheet

 

2SC5949 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC5949

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 220 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 270 pF

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: TO3PL

2SC5949 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC5949 Datasheet (PDF)

1.1. 2sc5949.pdf Size:255K _toshiba

2SC5949
2SC5949

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm • PC = 220W • Complementary to 2SA2121 Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector powe

1.2. 2sc5949.pdf Size:182K _inchange_semiconductor

2SC5949
2SC5949

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5949 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V = 200V(Min) (BR)CEO ·Complement to Type 2SA2121 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Reco

 4.1. 2sc5948 061116.pdf Size:152K _toshiba

2SC5949
2SC5949

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm • Complementary to 2SA2120 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit VCBO Collector-base voltage 200 V VCEO Collector-emitter voltage 200 V VEBO Emitter-base voltage 5 V Coll

4.2. 2sc5945.pdf Size:276K _renesas

2SC5949
2SC5949

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm). Out

 4.3. 2sc5946.pdf Size:159K _panasonic

2SC5949
2SC5949

?????? 2SC5946 ????NPN???????????? ???????????? Unit : mm 0.33+0.05 0.10+0.05 0.02 0.02 3 ??? ??????????fT ??? SSS ??????????????????????? ???????????? 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.800.05 ?????? Ta = 25C 1.200.05 5? ?? ?? ?? ?? ???????????(E ???) VCBO 30 V ???? ???????(B???) VCEO 20 V ? ???????????(C ???) VEBO 3 V ?????? IC 50 mA 1 : Base 2 : Emitter ???

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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