2SC5949 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5949  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 220 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 30 MHz

Capacitancia de salida (Cc): 270 pF

Ganancia de corriente contínua (hFE): 55

Encapsulados: TO3PL

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2SC5949 datasheet

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 2sc5949.pdf pdf_icon

2SC5949

2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector powe

 ..2. Size:182K  inchange semiconductor
 2sc5949.pdf pdf_icon

2SC5949

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5949 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA2121 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco

 8.1. Size:152K  toshiba
 2sc5948.pdf pdf_icon

2SC5949

2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit VCBO Collector-base voltage 200 V VCEO Collector-emitter voltage 200 V VEBO Emitter-base voltage 5 V Coll

 8.2. Size:276K  renesas
 2sc5945.pdf pdf_icon

2SC5949

2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6 2.0 x 2.0 x 0.8

MOSTRAR MÁS

Otros transistores... 2SC5785, 2SC5810, 2SC5819, 2SC5886, 2SC5886A, 2SC5906, 2SC5930, 2SC5948, 2N2222A, 2SC5976, 2SC6000, 2SC6010, 2SC6033, 2SC6034, 2SC6040, 2SC6042, 2SC6052