Биполярный транзистор DTA123JEB - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DTA123JEB
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.047
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SC-89 EMT3F SOT416FL
Аналоги (замена) для DTA123JEB
DTA123JEB Datasheet (PDF)
pdta123jef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA123JEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red
pdta123je 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA123JEPNP resistor-equipped transistorProduct specification 1998 Nov 25Supersedes data of 1997 Dec 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JEFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)handbook, halfpage33 Simplification of circuit d
pdta123jef 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA123JEFPNP resistor-equipped transistor1999 Apr 20Preliminary specificationPhilips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red
pdta123je 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA123JEPNP resistor-equipped transistorProduct specification 1998 Nov 25Supersedes data of 1997 Dec 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123JEFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)handbook, halfpage33 Simplification of circuit d
pdta123je pdta123jm pdta123jt pdta123ju.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
dta123je-jua-jka 132 132 e32 sot416 323 346.pdf
TransistorsDigital transistors (built-in resistors)DTA123JE / DTA123JUA / DTA123JKA /DTA123JSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi
dta123jefra dta123jkafra dta123jmfha dta123juafra.pdf
DTA123J seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R12.2kDTA123JM DTA123JEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTA123JE DT
dta123je dta123jka dta123jsa.pdf
TransistorsDigital transistors (built-in resistors)DTA123JE / DTA123JUA / DTA123JKA /DTA123JSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi
ddta123je.pdf
DDTA (R1R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1R2 Moisture Sensitivity: L
dta123je sot-523.pdf
MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTA123JEFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
dta123jca dta123je dta123jka dta123jsa dta123jua.pdf
DTA123JKA/DTA123JCA/DTA123JSA DTA123JE/DTA123JUA/ TRANSISTOR(PNP)Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost complet
dta123je.pdf
FM120-M WILLASDTA123JE THRUPNP Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toFeatures optimize
ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors
chdta123jegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA123JEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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