KRX102E - Даташиты. Аналоги. Основные параметры

KRX102E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2

KRX102U SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit desi

KRX102F SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. B INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1 FEATURES 1 5 Including two devices in TFSV. DIM MILLIMETERS (Thin Fine Pitch Super mini 5pin Package.) 2 _ + A 1.0 0.05 _ + A1 0.7 0.05 With Built-in bias resistors. _ + B 1.0 0.05 3 _ Simplify circuit design. 4 + B1

KRX101U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design. C

KRX103U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit desig

KRX105U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit desig

KRX104U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super mini type with 5 leads.) A 2.00 + 0.20 2 _ A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit desig

KRX101E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extereme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2

KRX105E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B

KRX103E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2

KRX104E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TESV. (Thin Extreme Super mini type with 5 pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + With Built-in bias resistors. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Simplify circuit design. _ + B1 1.2