KRX102E Datasheet, Equivalent, Cross Reference Search
Type Designator: KRX102E
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TESV
KRX102E Transistor Equivalent Substitute - Cross-Reference Search
KRX102E Datasheet (PDF)
krx102e.pdf
KRX102ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx102u.pdf
KRX102USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desi
krx102f.pdf
KRX102FSEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.B1FEATURES1 5Including two devices in TFSV.DIM MILLIMETERS(Thin Fine Pitch Super mini 5pin Package.)2 _+A 1.0 0.05_+A1 0.7 0.05With Built-in bias resistors. _+B 1.0 0.053_Simplify circuit design. 4+B1
krx101u.pdf
KRX101USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit design. C
krx103u.pdf
KRX103USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx105u.pdf
KRX105USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx104u.pdf
KRX104USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx101e.pdf
KRX101ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extereme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx105e.pdf
KRX105ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B
krx103e.pdf
KRX103ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx104e.pdf
KRX104ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
