Биполярный транзистор KRX211U - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRX211U
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50(12) V
Макcимальный постоянный ток коллектора (Ic): 0.1(0.5) A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 6.5 pf
Статический коэффициент передачи тока (hfe): 20(270)
Корпус транзистора: US6
KRX211U Datasheet (PDF)
krx211u.pdf
KRX211USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1 Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_+2 5 A1 1.3 0.1 With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 0.1+ Simplify circuit desi
krx214u.pdf
KRX214USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1 Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_+2 5 A1 1.3 0.1 With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 0.1+ Simplify circuit design.
krx212u.pdf
KRX212USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1 Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_+2 5 A1 1.3 0.1 With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 0.1+ Simplify circuit design.
krx210e.pdf
KRX210ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERSWith Built-in bias resistors. _A 1.6 + 0.05_A1 1.0 + 0.05Simplify circuit design. 52_B 1.6 + 0.05_B1 1.2 + 0.05Reduce a quantity of parts and manufacturing
krx210t.pdf
KRX210TSEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.EK B KFEATURESDIM MILLIMETERS_Including two devices in TS6. A 2.9 + 0.216B 1.6+0.2/-0.1With Built-in bias resistors. _C 0.70 + 0.052 5_+D 0.4 0.1Simplify circuit design. E 2.8+0.2/-0.3_Reduce a quantit
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050