All Transistors. KRX211U Datasheet

 

KRX211U Datasheet, Equivalent, Cross Reference Search

Type Designator: KRX211U

Material of Transistor: Si

Polarity: NPN*PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50(12) V

Maximum Collector Current |Ic max|: 0.5(0.1) A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 6.5 pF

Forward Current Transfer Ratio (hFE), MIN: 20(270)

Noise Figure, dB: -

Package: US6

KRX211U Transistor Equivalent Substitute - Cross-Reference Search

 

KRX211U Datasheet (PDF)

1.1. krx211u.pdf Size:91K _kec

KRX211U
KRX211U

KRX211U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ + 2 5 A1 1.3 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 0.1 + Simplify circuit design.

5.1. krx210e.pdf Size:47K _kec

KRX211U
KRX211U

KRX210E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS With Built-in bias resistors. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Simplify circuit design. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Reduce a quantity of parts and manufacturing pro

5.2. krx212u.pdf Size:90K _kec

KRX211U
KRX211U

KRX212U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ + 2 5 A1 1.3 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 0.1 + Simplify circuit design. C

5.3. krx210t.pdf Size:378K _kec

KRX211U
KRX211U

KRX210T SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E K B K FEATURES DIM MILLIMETERS _ ·Including two devices in TS6. A 2.9 + 0.2 16 B 1.6+0.2/-0.1 ·With Built-in bias resistors. _ C 0.70 + 0.05 2 5 _ + D 0.4 0.1 ·Simplify circuit design. E 2.8+0.2/-0.3 _ ·Reduce a quantity o

5.4. krx214u.pdf Size:91K _kec

KRX211U
KRX211U

KRX214U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ + 2 5 A1 1.3 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 0.1 + Simplify circuit design. C

Datasheet: KRX206U , KRX207E , KRX207U , KRX208E , KRX208U , KRX209E , KRX209U , KRX210E , BC550 , KRX212U , KRX214U , KTX211E , KTX211U , KTX212E , KTX212U , KTX213E , KTX213U .

 


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