Биполярный транзистор 2SB1593
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1593
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1.5
W
Макcимально допустимое напряжение коллектор-база (Ucb): 29
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 11
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 200
MHz
Ёмкость коллекторного перехода (Cc): 110
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: MT-3-A1
Аналоги (замена) для 2SB1593
2SB1593
Datasheet (PDF)
..1. Size:75K panasonic
2sb1593.pdf 
Power Transistors2SB1593Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping0.650.1 0.850.10.8 C 0.8 C1.00.10.70.1 Absolute Maximum Ratings Ta = 25C0.70.11.150.21.150.2Parameter Symbol
8.2. Size:69K rohm
2sb1590k.pdf 
2SB1590K Transistors Power Transistor (-15V, -1A) 2SB1590K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) SMT3at IC / IB = -0.4A / -20mA. 2) IC = -1A 2.9 1.10.4 0.83) Complements the 2SD2444K. (3)(2) (1) Packaging specification and hFE 0.95 0.950.15Type 2SB1590K1.9(1)EmitterSMT3Package(2)BaseEach lead has
8.3. Size:39K panasonic
2sb1599.pdf 
Transistor2SB1599Silicon PNP epitaxial planer typeFor power amplificationUnit: mmComplementary to 2SD24571.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5 0.08
8.4. Size:38K panasonic
2sb1592 e.pdf 
Transistor2SB1592Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.15 +0.150.45 0.1 0.45 0.1Collector to e
8.5. Size:43K panasonic
2sb1599 e.pdf 
Transistor2SB1599Silicon PNP epitaxial planer typeFor power amplificationUnit: mmComplementary to 2SD24571.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5 0.08
8.6. Size:55K panasonic
2sb1592.pdf 
Transistor2SB1592Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmFeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 11 VPea
8.7. Size:990K kexin
2sb1590k.pdf 
SMD Type TransistorsPNP Transistors2SB1590KSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-1A1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD2444K +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto
8.8. Size:932K kexin
2sb1599.pdf 
SMD Type TransistorsPNP Transistors2SB15991.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SD24570.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5
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