2SB1593 Specs and Replacement
Type Designator: 2SB1593
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 29 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 110 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: MT-3-A1
2SB1593 Transistor Equivalent Substitute - Cross-Reference Search
2SB1593 detailed specifications
2sb1593.pdf
Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 0.7 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 1.15 0.2 1.15 0.2 Parameter Symbol... See More ⇒
2sb1590k.pdf
2SB1590K Transistors Power Transistor (-15V, -1A) 2SB1590K Features External dimensions (Unit mm) 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) SMT3 at IC / IB = -0.4A / -20mA. 2) IC = -1A 2.9 1.1 0.4 0.8 3) Complements the 2SD2444K. (3) (2) (1) Packaging specification and hFE 0.95 0.95 0.15 Type 2SB1590K 1.9 (1)Emitter SMT3 Package (2)Base Each lead has... See More ⇒
2sb1599.pdf
Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Unit mm Complementary to 2SD2457 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 ... See More ⇒
Detailed specifications: 2SB1537 , 2SB1539 , 2SB1553 , 2SB1554 , 2SB1574 , 2SB1589 , 2SB1592 , 2SC5617 , S9018 , 2SB1599 , 2SB1602 , 2SB1612 , 2SB1623 , 2SB1623A , 2SB1629 , 2SB1631 , 2SB1638 .
Keywords - 2SB1593 transistor specs
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