2SB1602 - Даташиты. Аналоги. Основные параметры

Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1 stalled to the heat sin

Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1

Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD2469 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 s

Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi

Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 Low collector to emitter saturation voltage VCE(sat) 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1.

JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET

isc Silicon PNP Power Transistor 2SB1605 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -1.2V(Max.)@I = -3A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-freauen

isc Silicon PNP Power Transistor 2SB1604 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -10A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltag

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )

isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION Large Collector Current Satisfactory Linearity of Foward Current Transfer Ratio Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -5A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Complement to Type 2SD2469 Minimum Lot-to-Lot variations for

isc Silicon PNP Power Transistor 2SB1606 DESCRIPTION High Collector current Ic Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -4A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power

isc Silicon PNP Power Transistor 2SB1603 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -2A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )