2SB1602 Specs and Replacement
Type Designator: 2SB1602
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.3
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 60
pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: 2-8M1A
2SB1602 Transistor Equivalent Substitute - Cross-Reference Search
2SB1602 detailed specifications
8.1. Size:45K panasonic
2sb1605.pdf 

Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 Full-pack package with outstanding insulation, which can be in- 3.2 0.1 stalled to the heat sin... See More ⇒
8.2. Size:56K panasonic
2sb1604.pdf 

Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit mm Features 4.6 0.2 Low collector to emitter saturation voltage VCE(sat) 9.9 0.3 2.9 0.2 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1... See More ⇒
8.3. Size:55K panasonic
2sb1607.pdf 

Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Unit mm Complementary to 2SD2469 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 s... See More ⇒
8.4. Size:55K panasonic
2sb1606.pdf 

Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink wi... See More ⇒
8.5. Size:54K panasonic
2sb1603.pdf 

Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 Low collector to emitter saturation voltage VCE(sat) 3.2 0.1 High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw Absolute Maximum Ratings (TC=25 C) 2.6 0.1 1.... See More ⇒
8.6. Size:188K jmnic
2sb1604 2sb1604a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET... See More ⇒
8.7. Size:215K inchange semiconductor
2sb1605.pdf 

isc Silicon PNP Power Transistor 2SB1605 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -1.2V(Max.)@I = -3A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-freauen... See More ⇒
8.8. Size:213K inchange semiconductor
2sb1604.pdf 

isc Silicon PNP Power Transistor 2SB1604 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.6V(Max.)@I = -10A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltag... See More ⇒
8.9. Size:148K inchange semiconductor
2sb1605 2sb1605a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1605 2SB1605A DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ... See More ⇒
8.10. Size:149K inchange semiconductor
2sb1603 2sb1603a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1603 2SB1603A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )... See More ⇒
8.11. Size:214K inchange semiconductor
2sb1607.pdf 

isc Silicon PNP Power Transistor 2SB1607 DESCRIPTION Large Collector Current Satisfactory Linearity of Foward Current Transfer Ratio Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -5A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Complement to Type 2SD2469 Minimum Lot-to-Lot variations for... See More ⇒
8.12. Size:215K inchange semiconductor
2sb1606.pdf 

isc Silicon PNP Power Transistor 2SB1606 DESCRIPTION High Collector current Ic Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -4A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power ... See More ⇒
8.13. Size:215K inchange semiconductor
2sb1603.pdf 

isc Silicon PNP Power Transistor 2SB1603 DESCRIPTION High-speed Switching Low Collector to Emitter Saturation Voltage V = -0.5V(Max.)@I = -2A CE(sat) C Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage... See More ⇒
8.14. Size:149K inchange semiconductor
2sb1604 2sb1604a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1604 2SB1604A DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching APPLICATIONS For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 )... See More ⇒
Detailed specifications: 2SB1553
, 2SB1554
, 2SB1574
, 2SB1589
, 2SB1592
, 2SC5617
, 2SB1593
, 2SB1599
, MJE350
, 2SB1612
, 2SB1623
, 2SB1623A
, 2SB1629
, 2SB1631
, 2SB1638
, 2SB1638A
, 2SB1643
.
History: UN4210S
| MUN5114T1G
| UN4211
Keywords - 2SB1602 transistor specs
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