Справочник транзисторов. 2SB1667

 

Биполярный транзистор 2SB1667 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1667
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 9 MHz
   Ёмкость коллекторного перехода (Cc): 150 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: 2-10S2

 Аналоги (замена) для 2SB1667

 

 

2SB1667 Datasheet (PDF)

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SMD Type TransistorsPNP Transistors2SB1667TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low saturation voltage Audio Frequency Power Amplifier Applications0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:253K  renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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DATA SHEETSILICON POWER TRANSISTOR2SB1669PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATIONthe output of an IC. This transistor is ideal for OA and FA equipmentPart No. Packagesuch as motor and solenoid drivers.2SB1669 TO-220AB2SB1669-S TO-262FEATURES2SB1669-Z TO-220SMD High

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2SB1668TransistorsPower Transistor (-100V, -8A)2SB1668 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.10.0 4.52) Built-in resistor between base and emitter.3.2 2.8 3) Built-in damper diode.4) Complements the 2SD2607.1.21.30.8( )(1) Base Gate0.752.54 2.54 2.6 Absolute maximum ratings (Ta = 25C)(1) (2) (3)

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isc Silicon PNP Power Transistor 2SB1669DESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as motor and solenoid drivers

 8.6. Size:210K  inchange semiconductor
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isc Silicon PNP Power Transistor 2SB1669-ZDESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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