All Transistors. 2SB1667 Datasheet

 

2SB1667 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1667
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: 2-10S2

 2SB1667 Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1667 Datasheet (PDF)

 ..1. Size:159K  toshiba
2sb1667.pdf

2SB1667 2SB1667

 ..2. Size:1322K  kexin
2sb1667.pdf

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SMD Type TransistorsPNP Transistors2SB1667TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low saturation voltage Audio Frequency Power Amplifier Applications0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

 8.1. Size:253K  renesas
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2SB1667 2SB1667

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:253K  renesas
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2SB1667 2SB1667

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:138K  nec
2sb1669.pdf

2SB1667 2SB1667

DATA SHEETSILICON POWER TRANSISTOR2SB1669PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATIONthe output of an IC. This transistor is ideal for OA and FA equipmentPart No. Packagesuch as motor and solenoid drivers.2SB1669 TO-220AB2SB1669-S TO-262FEATURES2SB1669-Z TO-220SMD High

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2SB1667

2SB1668TransistorsPower Transistor (-100V, -8A)2SB1668 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.10.0 4.52) Built-in resistor between base and emitter.3.2 2.8 3) Built-in damper diode.4) Complements the 2SD2607.1.21.30.8( )(1) Base Gate0.752.54 2.54 2.6 Absolute maximum ratings (Ta = 25C)(1) (2) (3)

 8.5. Size:212K  inchange semiconductor
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2SB1667 2SB1667

isc Silicon PNP Power Transistor 2SB1669DESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as motor and solenoid drivers

 8.6. Size:210K  inchange semiconductor
2sb1669-z.pdf

2SB1667 2SB1667

isc Silicon PNP Power Transistor 2SB1669-ZDESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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