Ordering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2SC5694DC / DC Converter ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers andunit : mmprinter drivers.2042B8.0[2SA2037 / 2SC5694]4.03.31.0 1.0Features Adoption of MBIT process. Large current capacity.3.0 Low co

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5694DESCRIPTIONHigh speed switchingLarge Current CapacityHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lanp drivers,motor drivers andprinter drivers.ABSOLUTE MAXIMUM RATINGS(T =25)aS

2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.3 A) C Low collector-emitter saturation voltage: V = 0.14 V (max) CE (sat) High-speed switching: t = 120 ns (typ.) fMaximum Ratings (

2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO

Ordering number : ENN6896A2SC5690NPN Triple Diffused Planar Silicon Transistor2SC5690Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5690] Adoption of MBIT process.5.63.416.0 On-chip dam

Ordering number : ENN6665A2SC5699NPN Triple Diffused Planar Silicon Transistor2SC5699CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5699] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 :

Ordering number : ENN6663B2SC5696NPN Triple Diffused Planar Silicon Transistor2SC5696Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5696] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.

Ordering number : ENN6664A2SC5698NPN Triple Diffused Planar Silicon Transistor2SC5698CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5698] Adoption of MBIT process.5.63.416.0 On-chip damper diode. 3.12.82.0

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5696DESCRIPTIONHigh speed switchingBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO