2SC5694 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC5694
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 330 MHz
Collector Capacitance (Cc): 28 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO-126ML
2SC5694 Transistor Equivalent Substitute - Cross-Reference Search
2SC5694 Datasheet (PDF)
2sa2037 2sc5694.pdf
Ordering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2SC5694DC / DC Converter ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers andunit : mmprinter drivers.2042B8.0[2SA2037 / 2SC5694]4.03.31.0 1.0Features Adoption of MBIT process. Large current capacity.3.0 Low co
2sc5694.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5694DESCRIPTIONHigh speed switchingLarge Current CapacityHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lanp drivers,motor drivers andprinter drivers.ABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc5692.pdf
2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.3 A) C Low collector-emitter saturation voltage: V = 0.14 V (max) CE (sat) High-speed switching: t = 120 ns (typ.) fMaximum Ratings (
2sc5695.pdf
2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO
2sc5690.pdf
Ordering number : ENN6896A2SC5690NPN Triple Diffused Planar Silicon Transistor2SC5690Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SC5690] Adoption of MBIT process.5.63.416.0 On-chip dam
2sc5699.pdf
Ordering number : ENN6665A2SC5699NPN Triple Diffused Planar Silicon Transistor2SC5699CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5699] Adoption of MBIT process.5.63.416.03.12.82.0 2.10.90.71 2 31 :
2sc5696.pdf
Ordering number : ENN6663B2SC5696NPN Triple Diffused Planar Silicon Transistor2SC5696Color TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5696] Adoption of MBIT process.5.63.416.0 On-chip damper diode.3.12.82.
2sc5698.pdf
Ordering number : ENN6664A2SC5698NPN Triple Diffused Planar Silicon Transistor2SC5698CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process).[2SC5698] Adoption of MBIT process.5.63.416.0 On-chip damper diode. 3.12.82.0
2sc5696.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5696DESCRIPTIONHigh speed switchingBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for display horizontal deflection outputSwitching regulator and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
