Справочник транзисторов. 2N7051

 

Биполярный транзистор 2N7051 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N7051

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.625 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 200 MHz

Статический коэффициент передачи тока (hfe): 1000

Корпус транзистора: TO-92

Аналоги (замена) для 2N7051

 

 

2N7051 Datasheet (PDF)

0.1. 2n7051.pdf Size:27K _fairchild_semi

2N7051
2N7051

2N7051NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings

9.1. 2n705.pdf Size:276K _rca

2N7051

9.2. 2n7052 nzt7053 2n7053.pdf Size:314K _fairchild_semi

2N7051
2N7051

Discrete POWER & SignalTechnologies2N7052 2N7053 NZT7053CECC TO-92BBTO-226CESOT-223BENPN Darlington TransistorThis device is designed for applications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage.Sourced from Process 06.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO C

 9.3. 2n7054.pdf Size:259K _inchange_semiconductor

2N7051
2N7051

isc N-Channel MOSFET Transistor 2N7054FEATURESDrain Current I =43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.4. 2n7058.pdf Size:303K _inchange_semiconductor

2N7051
2N7051

isc N-Channel MOSFET Transistor 2N7058FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.5. 2n7055.pdf Size:194K _inchange_semiconductor

2N7051
2N7051

isc N-Channel MOSFET Transistor 2N7055FEATURESDrain Current: I = 33A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch mode power suppliesActive power factor corre

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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