2N7051 Datasheet and Replacement
Type Designator: 2N7051
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-92
2N7051 Substitution
2N7051 Datasheet (PDF)
2n7051.pdf

2N7051NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings
2n7052 nzt7053 2n7053.pdf

Discrete POWER & SignalTechnologies2N7052 2N7053 NZT7053CECC TO-92BBTO-226CESOT-223BENPN Darlington TransistorThis device is designed for applications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage.Sourced from Process 06.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO C
2n7054.pdf

isc N-Channel MOSFET Transistor 2N7054FEATURESDrain Current I =43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: NESG2021M16 , NESG2021M05 , 2N4910X , 2N4911X , 2N6245 , 2N6989 , 2N6989U , 2N6990 , 2SD669A , 2N7052 , 2N7053 , 2N7368 , 2N7369 , 2N7370 , 2N7371 , 2N7372 , 2N7373 .
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History: BDY79 | PZT5551



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