2N6990 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6990
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: 14PIN-FLAT
2N6990 Transistor Equivalent Substitute - Cross-Reference Search
2N6990 Datasheet (PDF)
2n6989-2n6990.pdf
TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector-Emitter Voltage (3) 50 Vdc VCEO Collector-Base Voltage (3) 75 Vdc TO- 116* VCBO Emitter-Base Voltage (3) 6.0 Vdc 2N6
2n699.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR 2N 699TO-39Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCERCollector Emitter Voltage 80 VVCBOCollector Base Voltage 120 VVEBOEmitter Base Voltage 5VPDTota
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2N734A
