MMBTH34 - Даташиты. Аналоги. Основные параметры

MMBTH34 NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and 3 mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. 2 Sourced from process 47. See MPSH11 for characteristics. SOT-23 1 Mar

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH69LT1/D UHF/VHF Transistor MMBTH69LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device Designed for UHF/VHF Amplifier Applications 1 High Current Gain Bandwidth Product BASE fT = 2000 MHz Min @ 10 mA 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 15 Vdc

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

MMBTH10RG NPN RF Transistor C This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E Sourced from process 42. SOT-23 B Mark 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C un

MPSH11 MMBTH11 C E TO-92 C E B B SOT-23 Mark 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift common- base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings

MPSH24/MMBTH24 NPN General Purpose Amplifier 3 This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low 2 frequency drift common-base VHF oscillator SOT-23 TO-92 applications with high output levels for driving FET 1 Mark 3A 1 mixers. 1. Base 2. Emitter 3. Collector 1. Base

MPSH81 MMBTH81 C E C TO-92 B E SOT-23 B Mark 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage

MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Please click here to visit our online spice models database. Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100 A - 30 mA Range B

MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Please click here to visit our online spice models database. Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100 A - 30 mA Range B

DATA SHEET www.onsemi.com PNP RF Transistor COLLECTOR 3 MMBTH81 1 This device is designed for general RF amplifier and mixer BASE applications to 250 MHz with collector currents in the 1.0 mA to 2 30 mA range. Sourced from Process 75. EMITTER Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant NSV Prefix for Automotive and Other Applicatio

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTOR

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTOR

MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M

MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTOR

MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*

MMBTH10LT1G, MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO 25 Vdc EMITTER Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 3 THERMAL CHARACTERISTICS 1 Character

UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R SOT-23 E B C Tape Reel MMBTH10L-x-AL3-

MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-23 DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators A and VHF mixer in tuner of a TV receiver. L 3 3 Top View C B Collector FEATURES 1 3 1 2 2 VHF/UHF Transistor K E 1 D Base PACKAG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR (NPN) SOT 23 FEATURES VHF/UHF Transistor MARKING 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter

MMBTH1 0 TRANSISTOR(NPN) SOT 23 FEATURES VHF/UHF Transistor MARKING 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3 V EBO IC Collector Current 50 mA PC Collector Power Dissipation 225 mW R Therm

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. MMBTH10 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collect

MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead(Pb)-Free 1 1 2 BASE FEATURES 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 V 30 Collector-Base Voltage V V CBO 3.0 Emitter-Base Voltage V V EBO Col

MMBTH10 COLLECTOR NPN 1.1 GHz RF Transistor 3 P b Lead(Pb)-Free 1 BASE 2 FEATURES SOT-23 Designed for VHF/UHF Amplifier Applications EMITTER and High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the 100mA 20mA Range in Common emitter or Common base mode of operations. (Ta=25 C) MAXIMUM RA

FM120-M WILLAS THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. compliance with RoHS requirements. We declare that the material of product SOD-123H

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTH10LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.225 W (Tamb=25 ) 1. 3 Collector current ICM 0.05 A Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range Unit mm TJ,

SEMICONDUCTOR MMBTH10Q TECHNICAL DATA VHF/UHF Transistors We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping 3000/Tape&Reel MMBTH10Q 3EQ 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 25 V SOT 23 Collector Base Voltage V CBO 30 V Emitter Base Voltage V EBO 3.0 V COLLE

SMD Type Transistors NPN Transistors MMBTH10 (KMBTH10) SOT-23 Unit mm Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 Collector Current Capability IC=0.05A 3 Collector Emitter Voltage VCEO=25V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

R UMW UMW MMBTH10 SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR (NPN) SOT-23 FEATURES VHF/UHF Transistor 1. BASE MARKING 3EM 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3 V EBO IC Collector Curr

MMBTH10 Silicon Epitaxial Planar Transistor FEATURES High transition frequency. Power dissipation. (P =350mW) C APPLICATIONS VHF/UHF Transistor SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 3 V EBO Collector

MMBTH10 MMBTH10 MMBTH10 MMBTH10 MMBTH10 TRANSISTOR(NPN) SOT-23 FEATURES VHF/UHF Transistor 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current 50 mA PC Collector Power Dissipation 225 m

MMBTH10 BIPOLAR TRANSISTOR (NPN) FEATURES VHF/UHF Transistor Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit V Collector-Base Voltage CBO 30 V V CEO Colle