MMBTH34 Datasheet and Replacement

MMBTH34NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and 3mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.2 Sourced from process 47. See MPSH11 for characteristics. SOT-231Mar

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTH69LT1/DUHF/VHF TransistorMMBTH69LT1COLLECTORPNP Silicon3Motorola Preferred Device Designed for UHF/VHF Amplifier Applications1 High Current Gain Bandwidth ProductBASEfT = 2000 MHz Min @ 10 mA23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 15 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTH81LT1/DUHF/VHF TransistorMMBTH81LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 20 Vdc CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTH10LT1/DMMBTH10LT1VHF/UHF TransistorCOLLECTORNPN Silicon Motorola Preferred Device31BASE321EMITTER2CASE 318-08, STYLE 6SOT-23 (TO-236AB)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 VdcDEVI

MPSH10 MMBTH10CEC TO-92EBBSOT-23Mark: 3ENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

MMBTH10RGNPN RF TransistorC This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators.E Sourced from process 42.SOT-23BMark: 3E1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings* Ta=25C un

MPSH11 MMBTH11CETO-92CEBBSOT-23Mark: 3GNPN RF TransistorThis device is designed for common-emitter low noise amplifierand mixer applications with collector currents in the 100 A to10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels fordriving FET mixers. Sourced from Process 47.Absolute Maximum Ratings

MPSH24/MMBTH24NPN General Purpose Amplifier3 This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low 2frequency drift common-base VHF oscillator SOT-23TO-92applications with high output levels for driving FET 1Mark: 3A1mixers.1. Base 2. Emitter 3. Collector 1. Base

MPSH81 MMBTH81CEC TO-92BESOT-23BMark: 3DPNP RF TransistorThis device is designed for general RF amplifier and mixerapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range. Sourced from Process 75.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage

MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Please click here to visit our online spice models database. Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100A - 30 mA Range B

MMBTH24 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Please click here to visit our online spice models database.Features Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators SOT-23 C High Current Gain Bandwidth Product Dim Min Max Ideal for Mixer and RF Amplifier Applications with A 0.37 0.51 collector currents in the 100A - 30 mA Range B

DATA SHEETwww.onsemi.comPNP RF TransistorCOLLECTOR3MMBTH811This device is designed for general RF amplifier and mixerBASEapplications to 250 MHz with collector currents in the 1.0 mA to230 mA range. Sourced from Process 75.EMITTERFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant NSV Prefix for Automotive and Other Applicatio

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

MMBTH10M3T5GNPN VHF/UHF TransistorThe MMBTH10M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeVHF/UHF applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTOR

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTH10M3T5GNPN VHF/UHF TransistorThe MMBTH10M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeVHF/UHF applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTOR

MMBTH10L,MMBTH10-4L,SMMBTH10-4L,NSVMMBTH10LVHF/UHF Transistorwww.onsemi.comNPN SiliconFeatures S and NSV Prefixes for Automotive and Other ApplicationsSOT-23 (TO-236)Requiring Unique Site and Control Change Requirements;CASE 318AEC-Q101 Qualified and PPAP CapableSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31M

MMBTH10M3T5GNPN VHF/UHF TransistorThe MMBTH10M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeVHF/UHF applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTOR

MMBTH10LT1G,NSVMMBTH10LT1G,MMBTH10LT3G,MMBTH10-4LT1GVHF/UHF Transistorhttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 (TO-236) NSV Prefix for Automotive and Other Applications RequiringCASE 318Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant*

MMBTH10LT1G,MMBTH10-4LT1GVHF/UHF TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 25 VdcEMITTERCollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc3THERMAL CHARACTERISTICS1Character

UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHFoscillators and VHF Mixer in a tuner of a TV receiver. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R SOT-23 E B C Tape ReelMMBTH10L-x-AL3-

MMBTH10 50 mA, 30 V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free SOT-23 DESCRIPTION The MMBTH10 is designed for use in VHF & UHF oscillators Aand VHF mixer in tuner of a TV receiver. L33Top View C BCollectorFEATURES 13 1 22VHF/UHF Transistor K E1 DBasePACKAG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR (NPN) SOT23 FEATURES VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter

MMBTH1 0TRANSISTOR(NPN)SOT23 FEATURES VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 3 V EBOIC Collector Current 50 mA PC Collector Power Dissipation 225 mW R Therm

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.MMBTH10MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collect

MMBTH10WVHF/UHF TransistorsCOLLECTOR33P b Lead(Pb)-Free112BASEFEATURES:2EMITTERSOT-323(SC-70)* We declare that the material of product compliance with RoHS requirements.Maximum Ratings (T =25C Unlesso therwise noted)ARating SymbolValue UnitVCEOCollector-Emitter Voltage 25 V30Collector-Base Voltage V VCBO3.0Emitter-Base Voltage VVEBOCol

MMBTH10COLLECTORNPN 1.1 GHz RF Transistor3P b Lead(Pb)-Free1BASE2FEATURESSOT-23 Designed for VHF/UHF Amplifier ApplicationsEMITTERand High Output VHF oscillators. High Current Gain Bandwidth product. Ideal for Mixer and RF Amplifier Application with Collector Current in the100mA~20mA Range in Common emitter or Common base mode of operations.(Ta=25 C)MAXIMUM RA

FM120-M WILLASTHRUMMBTH10LT1VHF/UHF TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.compliance with RoHS requirements.We declare that the material of product SOD-123H

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTH10LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.225 W (Tamb=25) 1. 3 Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range Unit: mm TJ,

SEMICONDUCTORMMBTH10QTECHNICAL DATAVHF/UHF TransistorsWe declare that the material of product compliance with RoHS requirements.Ordering InformationDevice Marking Shipping3000/Tape&Reel MMBTH10Q 3EQ3MAXIMUM RATINGS2Rating Symbol Value Unit1CollectorEmitter Voltage V CEO 25 V SOT23CollectorBase Voltage V CBO 30 VEmitterBase Voltage V EBO 3.0 VCOLLE

SMD Type TransistorsNPN TransistorsMMBTH10 (KMBTH10)SOT-23Unit: mm Features +0.12.9 -0.1+0.10.4 -0.1 Collector Current Capability IC=0.05A3 Collector Emitter Voltage VCEO=25V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

RUMW UMW MMBTH10SOT-23 Plastic-Encapsulate TransistorsMMBTH10 TRANSISTOR (NPN) SOT-23 FEATURES VHF/UHF Transistor 1. BASE MARKING: 3EM 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 3 V EBOIC Collector Curr

MMBTH10 Silicon Epitaxial Planar Transistor FEATURES High transition frequency. Power dissipation. (P =350mW) CAPPLICATIONS VHF/UHF Transistor SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage V 3 V EBO Collector

MMBTH10MMBTH10MMBTH10MMBTH10MMBTH10 TRANSISTOR(NPN)SOT-23 FEATURES VHF/UHF Transistor1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) SymbolParameter ValueUnitVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 3 VIC Collector Current 50mAPC Collector Power Dissipation 225m

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. MMBTH10 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO Vdc 3.0

MMBTH10BIPOLAR TRANSISTOR (NPN)FEATURES VHF/UHF Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitVCollector-Base Voltage CBO 30 VVCEOColle