T5609 - параметры, поиск аналогов, даташиты транзистора

T5609 Datasheet (PDF)

0.1. Size:216K mcc
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MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth TPT5609Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Excellent linearity of Current GainNPN Epitaxial Low saturation voltageSilicon TransistorMaximum Ratings Symbol Rating Rating UnitTO-92LVCEO Collector-Emitter Voltage 20 VVCBO Collector-Base Voltage 25 V

0.2. Size:206K lge
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TPT5609 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features Excellent linearity of Current Gain 7.8008.200Low saturation voltage Complementary to TPT5610 0.600 0.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.55013.800VCBO 25 VCollector- Base Voltage 14.200VCEO 20 V

0.3. Size:458K can-sheng
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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.comTO-92L Plastic-Encapsulate TransistorsTO-92L 5609 TRANSISTOR (NPN) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5610 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter

0.4. Size:143K blue-rocket-elect
hit5609.pdf pdf_icon

HIT5609(3DG5609) NPN /SILICON NPN TRANSISTOR :, Purpose: Power amplifier and switching application, electronic governor applications. :, HIT5610(3CG5610) Features: Low saturation voltage, complementary pair with HIT5610(3CG5610). /Absolute maximum ratings(Ta=25

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