T5609 Specs and Replacement
Type Designator: T5609
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 190 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92L
T5609 Substitution
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T5609 datasheet
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TPT5609 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent linearity of Current Gain NPN Epitaxial Low saturation voltage Silicon Transistor Maximum Ratings Symbol Rating Rating Unit TO-92L VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 25 V ... See More ⇒
TPT5609 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage Complementary to TPT5610 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO 25 V Collector- Base Voltage 14.200 VCEO 20 V ... See More ⇒
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92L Plastic-Encapsulate Transistors TO-92L 5609 TRANSISTOR (NPN) 1. EMITTER FEATURES Excellent linearity of Current Gain 2. COLLECTOR Low saturation voltage 3. BASE Complementary to TPT5610 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ... See More ⇒
Detailed specifications: K159NT1G , K159NT1D , K159NT1E , 1129NTV1 , B1129NT1V-1 , CS13001 , CS13002 , CS13003 , D882P , T5610 , TPT5609 , TPT5610 , 2SC4977 , 2SA1013T , 2SA1015M , 2SA1577W , 2SA1930I .
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