ST2SD882U-P - параметры, поиск аналогов, даташиты транзистора

ST2SD882U-P Datasheet (PDF)

..1. Size:297K semtech
st2sd882u-p.pdf pdf_icon

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector

5.1. Size:535K semtech
st2sd882u.pdf pdf_icon

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 APeak Collector Current (t = 350 s) ICP 7 AT

6.1. Size:439K semtech
st2sd882ht.pdf pdf_icon

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

6.2. Size:386K semtech
st2sd882t.pdf pdf_icon

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameterCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 5 VCollector Current IC 3 ACollector C

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .