ST2SD882U-P Specs and Replacement

Type Designator: ST2SD882U-P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

 ST2SD882U-P Substitution

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ST2SD882U-P datasheet

 ..1. Size:297K  semtech

st2sd882u-p.pdf pdf_icon

ST2SD882U-P

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector... See More ⇒

 5.1. Size:535K  semtech

st2sd882u.pdf pdf_icon

ST2SD882U-P

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T... See More ⇒

 6.1. Size:439K  semtech

st2sd882ht.pdf pdf_icon

ST2SD882U-P

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C... See More ⇒

 6.2. Size:386K  semtech

st2sd882t.pdf pdf_icon

ST2SD882U-P

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C... See More ⇒

Detailed specifications: ST2SD1766U, ST2SD2150U, ST2SD2391U, ST2SD526, ST2SD874U, ST2SD882HT, ST2SD882T, ST2SD882U, TIP142, ST8050, STBD135T, STBD136T, STBD137T, STBD138T, STBD139T, STBD140T, STBD909

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