ST2SD882U-P Todos los transistores

 

ST2SD882U-P Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SD882U-P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 36 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO126
 

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ST2SD882U-P datasheet

 ..1. Size:297K  semtech
 st2sd882u-p.pdf pdf_icon

ST2SD882U-P

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector

 5.1. Size:535K  semtech
 st2sd882u.pdf pdf_icon

ST2SD882U-P

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T

 6.1. Size:439K  semtech
 st2sd882ht.pdf pdf_icon

ST2SD882U-P

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C

 6.2. Size:386K  semtech
 st2sd882t.pdf pdf_icon

ST2SD882U-P

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C

MOSTRAR MÁS

Otros transistores... ST2SD1766U , ST2SD2150U , ST2SD2391U , ST2SD526 , ST2SD874U , ST2SD882HT , ST2SD882T , ST2SD882U , TIP142 , ST8050 , STBD135T , STBD136T , STBD137T , STBD138T , STBD139T , STBD140T , STBD909 .

 

 

 


 
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