Биполярный транзистор 13003 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 13003
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 1.25 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 8 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO126
13003 Datasheet (PDF)
mje13002 13003.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002MJE13003TO-126 Plastic PackageSuitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers andDeflection CircuitsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MJE13002 MJE13003 UNITVCEO(sus)Collector Emitter Voltage 300
xw6821 xw6822 xw6822a xw6823 xw6823a xw13001 sxw13001 xw13002 sxw13002 xw13003 sxw13003 sxw13005 sxw13007 sxw13009.pdf
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phe13003a.pdf
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PHE13003ANPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic
phe13003au 1.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col
phe13003c.pdf
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PHE13003CNPN power transistorRev. 1 29 July 2010 Preliminary data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V High typical DC current gain1.3 Applications Compact fluorescent l
phd13003c.pdf
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PHD13003CNPN power transistor with integrated diodeRev. 01 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package1.2 Features and benefits Fast switching High voltage capability High typical DC current
st13003d-k.pdf
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ST13003D-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode123ApplicationsSOT-32 Electronic ballast for fluorescent lightingDescriptionFigure 1. Internal schemati
st13003.pdf
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ST13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING12 SWITCH MODE POWER SUPPLIES3DESCRIPTIONSOT-32The device is manufactured using high voltageMulti Epitaxial Planar te
stx13003 2.pdf
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STX13003High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLs)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured
st13003-k.pdf
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ST13003-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications12 Electronic ballast for fluorescent lighting (CFL)3 SMPS for battery chargerSOT-32DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagrammulti-epitaxi
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STK13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STK13003 IS REVERSE PINS OUT VsSTANDARD SOT-82 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIESSOT-82DESCRIPTION The device is
std13003.pdf
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STD13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED11 SURFACE-MOUNTING DPAK (TO-252)233POWER PACKAGE IN TAPE & REEL (Suffix"T4") THROUGH-HOLE IPAK (TO-2
st13003dn.pdf
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ST13003DNHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode3Application 21 Compact fluorescent lamps (CFLs)SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high swi
stx13003.pdf
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STX13003High voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speedApplications Compact fluorescent lamps (CFLs) SMPS for battery chargerDescriptionTO-92 TO-92APThe device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure
st13003n.pdf
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ST13003NHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplication32 Compact fluorescent lamps (CFLs)1SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a
st13003 st13003-k.pdf
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ST13003, ST13003-KHigh voltage fast-switching NPN power transistorDatasheet - production dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications32 Electronic ballast for fluorescent lighting (CFL)1 SMPS for battery chargerSOT-32DescriptionFigure 1. Internal schematic diagramThe device is manufact
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TTC13003LBipolar Transistors Silicon NPN Triple-Diffused TypeTTC13003LTTC13003LTTC13003LTTC13003L1. Applications1. Applications1. Applications1. Applications High-Speed Switching for Inverter Lighting Equipment2. Features2. Features2. Features2. Features(1) Suitable for RCC circuits.(guaranteed small current hFE):hFE = 10(min)(IC = 1 mA)(2) High speed: tf =
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FJN13003High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21WTO-9211. Emitter 2. Collector 3.BaseNPN Silicon Transistor Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Volta
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KSE13003THigh Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC C
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March 2008KSE13003NPN Silicon TransistorHigh Voltage Switch Mode Applications High Voltage Capability High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter
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KSE13003 NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-126 High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) IC 3
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KSH13003 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORD-PAKD-PACK FOR SURFACE MOUNT APPLICATIONS High speed Switching Suitable for Switching Regulator Motor Control Straight Lead(I.PACK, I Suffix)1 Lead Formed for Surface Mount Applications(No Suffix)1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitI-PAK
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PART OBSOLETE NO ALTERNATE PART APT13003EU Green465V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 465V Case: TO126 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 1.5A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per M
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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mje13003.pdf
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MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat
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MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat
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UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1
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UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100C * Inductive switching ma
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UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage and high reliability, etc. The UTC 13003DW is suitable for electronic
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UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread
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UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130
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UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100C *
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UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorco
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UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W
std13003d.pdf
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STD13003DNPN Silicon Power TransistorApplications PIN Connection Power amplifier application High current switching application Features High speed switching VCEO(sus)=400V Suitable for Switching Regulator and Motor Control TO-252 Ordering Information Type NO. Marking Package Code STD13003D STD13003 TO-252Absolute Maximum Ratings (Ta=25)
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STD13003LNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code E C B ESTD13003L STD13003 TO-92LAbsolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating UnitCollector-base
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STD13003QNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code E C B ESTD13003Q STD13003 TO-92Absolute Maximum Ratings (Ta=25) Characteristic Symbol Ratings UnitCollector-base
bd13003b.pdf
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BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 ABRange 2-2.5 (s) 2.5-3 (s) EFProduct-Rank BD13003B-B1 BD13003B-B2 CNHRange 3-3.5 (s) 3.5
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3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADMillimeter REF. Min. Max. BA 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E CF 0.36 0.51 FG 1.27 TYP. H 1.10 - J 2
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CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252 FEATURES Power Switching Applications PACKAGE INFORMATION Package MPQ Leader Size ACBDTO-252 2.5K 13 inch G EK H FNOPM J Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Ma
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PZT13003 1.5A , 700V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-223FEATURES For AF driver and output stages Power switching applications A M4CLASSIFICATION OF hFE Top ViewC BProduct-Rank PZT13003-A PZT13003-B PZT13003-C123Range 8~20 15~30 25~40K LE
ts13003bct.pdf
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TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
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TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
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TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto
ts13003hv a07.pdf
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TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
ts13003ck-ct.pdf
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TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1.5A VCE(SAT) 1V @ IC =0.5A, IB =0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
ts13003b c07.pdf
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TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
ts13003hv.pdf
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TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyC13003NPN SILICON POWER TRANSISTORTO126 Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 600VCollector -Emitter ( sus) Voltage
mjd13003.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER TRANSISTOR MJD13003DPAK (TO-252)Plastic PackageDesigned for High Voltage, High Speed Power Switching Inductive Circuits ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 400 VCollector Emitter Voltage VCEV 700 VEmit
cd13003.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003TO126 Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO 9
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor3DD13003N3 TRANSISTOR (NPN)TO-126 FEATURES 1 . BASE Power switching applications Good high temperature2. COLLECTOR Low saturation voltage3. EMITTER High speed switching Equivalent Circuit Logo13003N3=Device code 13003N3ORDERING INFORMATION Part Number Package Packi
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SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3
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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13003A MAIN CHARACTERISTICS Package IC 1.5A VCEO 450V PC(TO-92-FJ/TO-92-FJ-F1) 1W PC(DPAK/IPAK) 10W PC(TO-126) 20W PC(TO-220) 40W TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballasts
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Spec. No. : C827D3 Issued Date : 2012.04.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003D3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003D3 TO-126ML BBase CCollector EEmitter E C B Abs
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ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula
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NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W
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SEMICONDUCTORMJE13003TTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DFEATURESEAExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A CF GDIM MILLIMETERSHigh Collector Voltage : VCBO=700V.BA 8.3 MAXB 11.30.3C 4.15 TYP1 2 3D 3.20.2E 2.00.2H F 2.80.1IG 3.20.1MAXIMUM RA
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SEMICONDUCTOR MJE13003BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=0.5S(Max.), tf=0.7S(Max.), at IC=1AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_MA
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SEMICONDUCTOR MJE13003ATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_
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SEMICONDUCTORMJE13003DTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.AICJFEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0ADIM MILLIMETERSA 6 50 0 2High Collector Voltage : VCBO=700V.B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATING (Ta=25C)E 2 70 0 2F 2 30 0 1
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SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.TO-126 FEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A1.BASEHigh Collector Voltage : VCBO=700V.2.COLLECTOR 3.EMITTERMAXIMUM RATING (Ta=25C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNITVC
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SEMICONDUCTORMJE13003ITECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DIM MILLIMETERSA 2.20 0.2B 1.50 0.15FEATURESc 0.5 0.07Excellent Switching TimesD 6.50 0.151 2 3: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0A e 2.30 typL 7.70 0.2High Collector Voltage : VCBO=700V.A1 1.20 0.05b1 0.8 0.1
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SMD Type TransistorsNPN TransistorsMJD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
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SMD Type TransistorsNPN Transistors3DD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
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DIP Type TransistorsNPN TransistorsKSU13003HTO-251Unit:mm6.60.22.30.15.350.150.50.05 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=530V High Voltage, High Speed Switching 1 2 30.750.150.80.150.5+0.10.60.1 -0.052.3typ1.20.32.3typ1. Base2. Collector3. Emitter Absolute Maximum Ratings Ta =
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DIP Type TransistorsNPN TransistorsNJM13003-1.63TO-126Unit:mm8.00 0.30 3.25 0.20 Features High voltage capability3.20 0.10 High speed switching Wide SOA(1.00) (0.50)0.75 0.10 ROHS compliant1.75 0.201.60 0.100.75 0.10#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitter Absol
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WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such
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SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value
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WBR13003B2WBR13003B2WBR13003B2WBR13003B2High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Par
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WBR13003DWBR13003DWBR13003DWBR13003DHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speedswitc
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WBP13003DWBP13003DWBP13003DWBP13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such
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SBP13003HSBP13003HSBP13003HSBP13003HHigh Voltage Fast -Switching NPN Power TransistorFeaturesVery High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter
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SBR13003BSBR13003BSBR13003BSBR13003BHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Paramet
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WBN13003B2DWBN13003B2DWBN13003B2DWBN13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.
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WBR13003B3WBR13003B3WBR13003B3WBR13003B3High Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for
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WBR13003D1WBR13003D1WBR13003D1WBR13003D1High Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speeds
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WBR13003WBR13003WBR13003WBR13003High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Parameter T
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SBR13003BDSBR13003BDSBR13003BDSBR13003BDHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability1.Base Wide Reverse Bias SOA3.EmitterGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switchin
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SBP13003-OSBP13003-OSBP13003-OSBP13003-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG
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WBR13003LDWBR13003LDWBR13003LDWBR13003LDHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability High Voltage Capability Wide Soa Bu
sbn13003a.pdf
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SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc
wbn13003b.pdf
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WBN13003BWBN13003BWBN13003BWBN13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter Tes
sbn13003a1.pdf
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SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par
sbp13003d.pdf
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SBP13003DSBP13003DSBP13003DSBP13003DHigh Voltage Fast -Switching NPN Power TransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics requir
wbr13003b2d.pdf
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WBR13003B2DWBR13003B2DWBR13003B2DWBR13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.
wbr13003x.pdf
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WBR13003XWBR13003XWBR13003XWBR13003XHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionGener
wbr13003b.pdf
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WBR13003BWBR13003BWBR13003BWBR13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switchingmode power supply.Absolute Maximum RatingsSymbol Parameter Tes
wbr13003l2.pdf
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WBR13003L2WBR13003L2WBR13003L2WBR13003L2High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheel
sbr13003d.pdf
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SBR13003DSBR13003DSBR13003DSBR13003DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling
sbr13003h.pdf
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SBR13003HHigh Voltage FastSwitching NPNPower Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value U
sbr13003b1.pdf
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SBR13003B1SBR13003B1SBR13003B1SBR13003B1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG
wbn13003a1.pdf
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WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par
sbu13003bd.pdf
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SBU13003BDHigh Voltage Fast-Switching NPN Power TransistorFeatures symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Rat
apt13003hu-hz.pdf
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Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003HGeneral Description FeaturesThe APT13003H series are high voltage, high speed High Switching Speed switching NPN power transistors specially designed High Collector-emitter Voltagefor off-line switch mode power supplies with low out- Low Costput power. ApplicationsThe APT13003H series are available
apt13003eu-ez.pdf
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Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003EGeneral Description FeaturesThe APT13003E series are high voltage, high speed High Switching Speed switching NPN Power transistors specially designed High Collector-Emitter Voltagefor off-line switch mode power supplies with low out- Low Costput power. Bulk and Ammo Packing TO-92 Package andTO-12
apt13003su-sz.pdf
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Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003SGeneral Description FeaturesThe APT13003S series are high voltage, high speed High Switching Speed switching transistors specially designed for off-line High Collector-Emitter Voltageswitch mode power supplies with low output power. Low Cost Bulk and Ammo Packing TO-92 Package andThe APT13003S seri
apt13003lz.pdf
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Data SheetHIGH VOLTAGE NPN TRANSISTOR APT13003LGeneral Description FeaturesThe APT13003L series are high voltage, high speed High Switching Speedswitching NPN power transistor specially designed for High Collector-Emitter Voltageoff-line switch mode power supplies with low output Low Costpower. ApplicationsThe APT13003L series is available in TO-92 package. Batt
apt13003di-du-dz.pdf
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Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003DGeneral Description FeaturesThe APT13003D is a high voltage, high speed, high High Switching Speedefficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficiencyThe APT13003D
3n13003gp.pdf
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CHENMKO ENTERPRISE CO.,LTD3N SMALL FLAT NPN Epitaxial Transistor VOLTAGE 0 Volts CURRENT AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* PC= 1.5 W (mounted on ceramic substrate).* High saturation current capability..114(2.90).307(7.80).059(1.50).098(2.50).291(7.40)CONSTRUCTION .043(1.10).161(4.1
e13003da.pdf
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TRANSISTOR E13003DA MAIN CHARACTERISTICS FEATURES IC 1.5A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 1.5W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballasts
mje13003n5.pdf
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MJE13003N5(3DD13003N5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003vk3.pdf
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MJE13003VK3(3DD13003VK3) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.
mje13003l1.pdf
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MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003vg1.pdf
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MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE
mje13003dn5.pdf
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MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003j1g.pdf
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MJE13003J1G(3DD13003J1G) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003k4.pdf
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MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003h1.pdf
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MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO
mje13003dk1.pdf
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MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003e1.pdf
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MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003h6.pdf
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MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003f1.pdf
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MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003i7.pdf
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MJE13003I7(3DD13003I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003di5.pdf
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MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V
mje13003i6.pdf
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MJE13003I6(3DD13003I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003di1.pdf
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MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003g1.pdf
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MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003h5.pdf
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MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003hn6.pdf
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MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP
mje13003k3.pdf
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MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003dk3.pdf
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MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003vn5.pdf
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MJE13003VN5(3DD13003VN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V
mje13003k7.pdf
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MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003dg1.pdf
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MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003hk5.pdf
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MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003g5.pdf
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MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003dk5.pdf
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MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003dg5.pdf
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MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700
mje13003k5.pdf
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MJE13003K5(3DD13003K5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003vf1.pdf
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MJE13003VF1(3DD13003VF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V
mje13003m7.pdf
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MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003i1.pdf
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MJE13003I1(3DD13003I1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003f2.pdf
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MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003f5.pdf
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MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003vi5.pdf
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MJE13003VI53DD13003VI5 NPN /SILICON NPN TRANSISTOR Purpose:High voltage capability,high speed switching,wide SOA. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. /Absolute maximum ratings(Tc=25
mje13003j1.pdf
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MJE13003J1(3DD13003J1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003k6.pdf
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MJE13003K6(3DD13003K6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003f6.pdf
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MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003h3.pdf
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MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003lf5.pdf
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MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V
mje13003m8.pdf
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MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003l5.pdf
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MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003m5.pdf
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MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO
mje13003n8.pdf
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MJE13003N8(3DD13003N8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003vi1.pdf
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MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features: High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(
mje13003m6.pdf
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MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003lf1.pdf
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MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V
mje13003vh5.pdf
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MJE13003VH53DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.
mje13003k8.pdf
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MJE13003K8(3DD13003K8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003di3.pdf
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MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V
mje13003ft.pdf
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MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003vn7.pdf
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MJE13003VN7(3DD13003VN7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V
mje13003l3.pdf
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MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003g6.pdf
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MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003l6.pdf
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MJE13003L6(3DD13003L6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V
mje13003vh1.pdf
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MJE13003VH13DD13003VH1 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.
mje13003m3.pdf
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MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003dk7.pdf
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MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V
mje13003vg5.pdf
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MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE
mje13003m1.pdf
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MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V
mje13003vk5.pdf
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MJE13003VK5(3DD13003VK5) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.
ksb13003c.pdf
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KSB13003C SEMIHOW REV.A0, January 2012 KSB13003CKSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E
ksu13003er.pdf
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KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M
ksh13003a.pdf
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KSH13003AKSH13003A SEMIHOW REV.A1,Jan 2008KSH130003AKSH13003AHigh Voltage Switch Mode Applicationsgg pp High Speed Switching Suitable for Switching Regulator and Motor Control1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted30 WattsTO-220CHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorCollector-Bas
ksc13003h.pdf
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KSC13003H SEMIHOW REV.A1,Oct 2007 KSC13003HKSC13003H Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 20 Watts TO-126 CHARACTERISTICS SYMBOL RATING UNIT 1. Base
ksb13003ar.pdf
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KSB13003ARKSB13003AR SEMIHOW REV.A2,Oct 2007KSB130003ARKSB13003ARHigh Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless
ksg13003ar.pdf
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KSG13003AR SEMIHOW REV.A0,Mar 2009KSG13003ARKSG13003ARSwitch Mode series NPN silicon Power Transistor High voltage, high speed power switching1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.5 WattsTO-92LCHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collector3. BaseCollector-Base Voltage VCBO 700 VCollector
ksd13003e.pdf
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KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum
ksb13003h.pdf
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KSB13003H SEMIHOW REV.A0,Oct 2007 KSB13003HKSB13003H High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitte
ksd13003er.pdf
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KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M
ksc13003a.pdf
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KSC13003AKSC13003A SEMIHOW REV.A1,Oct 2007KSC130003AKSC13003ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted20 WattsTO-1
ksb13003a.pdf
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KSB13003AKSB13003A SEMIHOW REV.A1,Oct 2007KSB130003AKSB13003AHigh Voltage Switch Mode Applicationgg pp High Speed Switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector3. EmitterCollector-B
ksu13003e.pdf
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KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum
ksb13003hr.pdf
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KSB13003HRKSB13003HR SEMIHOW REV.A0,Oct 2007KSB130003HRKSB13003HRHigh Voltage Switch Mode Applicationgg pp High voltage, High speed power switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collect
ksb13003er.pdf
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KSB13003ERKSB13003ER SEMIHOW REV.A0,Apr 2008KSB130003ERKSB13003ERHigh Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute M
ksb13003cr.pdf
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KSB13003CR SEMIHOW REV.A0, January 2012 KSB13003CRKSB13003CR High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector
ksu13003hr.pdf
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KSU13003HR SEMIHOW REV.A0,July 2011 KSU13003HRKSU13003HR Switch Mode series NPN silicon Power Transistor High Voltage, High Speed Switching Suitable for switching regulator, inverters motor controls 2 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 25 Watts TO-251 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter
sbr13003a.pdf
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SBR13003ASemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-126This devices is designed for high voltage, high speed s
sbp13003.pdf
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SBP13003SemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector- Very High Switching Speed - Minimum Lot-to-Lot hFE Variation1.Base - Short storge time- Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-220This devices is designed for high voltage, high speed switchingcharacteristic,especially suitable for ba
sl13003.pdf
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SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25
sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf
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SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25
alj13003.pdf
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SUNROCALJ13003 TRANSISTOR(NPN)FEATURESpower switching applicationsMAXIMUM RATINGS(Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current-Continuous 1.2 APC Collector Power Dissipation 25 WTJ Junction Temperature 150 Tstg Storage Temperature -55
tsl13003.pdf
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Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T =25C unless note
3dd13003m8d.pdf
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NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot TC=25 60 W
3dd13003h6d.pdf
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NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
3dd13003f6.pdf
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NPN R 3DD13003 F6 3DD13003 F6 NPN VCEO 400 V IC 1.5 A Ptot Tc=25 50 W
3dd13003f1d.pdf
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NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W
3dd13003e1d.pdf
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NPN R 3DD13003 E1D 3DD13003 E1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
3dd13003e6d.pdf
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NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
ht13003.pdf
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SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors HT13003 (AFO) TRANSISTOR (NPN) TO-126C FEATURES 1.BASE power switching applications 2.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-B
hr13003.pdf
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SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 HR13003 TRANSISTOR (NPN) FEATURES High total power disspation. (pc=1.25w) MARKING:MJE13003 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER 1 2 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 4
mot13003c mot13003d.pdf
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MOTMOT13003C/MOT13003DNPN SILICON TRANSISTORSymbol PRODUCT CHARACTERISTICSBVCBO700VBVCEO400V10-40HFE@5V1AIC 1.5A FEATURES* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100C Typical tc = 290ns @ 1A, 100C. * 700V blocking capability APPLICATIONS* Switching regulators, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuit
phe13003a.pdf
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PHE13003ANPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic li
phe13003c.pdf
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PHE13003CNPN power transistor13 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses3. Applications Compac
phd13003c.pdf
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IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where
gt13003y.pdf
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GT13003YHigh Voltage And High Speed Switching TransistorsTO-252 0.094(2.38)0.264(6.70)Features0.087(2.20)0.256(6.50)0.022(0.56)0.215(5.46)0.018(0.46)0.202(5.13)2=1.65A=800V 0.055(1.40)0.031(0.80) 0.244(6.20)0.236(6.00)0.051(1.30)0.409(10.40)0.004(0.10)0.043(1.10)0.386( 9.80)MAX.1 2 30.114(2.90)0.067(1.70)REF.0.055(1.40)0.032(0.81)0.022(0
mjd13003.pdf
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isc Silicon NPN Power Transistor MJD13003DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are particularly suited for115 and 220V switchmode applications such as switchingregulato
mje13003a.pdf
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isc Silicon NPN Power Transistor MJE13003ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p
mje13003d.pdf
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INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 7
mje13003.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;c
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
![13003](https://alltransistors.com/images/us.png)
![13003](https://alltransistors.com/images/es.png)
![13003](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
BJT: 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS | HSA1037AKR | HSA1037AKQ