13003 datasheet, аналоги, основные параметры
Наименование производителя: 13003 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 1.25 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 8 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO126
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13003 даташит
mje13002 13003.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13002 MJE13003 UNIT VCEO(sus) Collector Emitter Voltage 300
xw6821 xw6822 xw6822a xw6823 xw6823a xw13001 sxw13001 xw13002 sxw13002 xw13003 sxw13003 sxw13005 sxw13007 sxw13009.pdf
phe13003a.pdf
PHE13003A NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic
phe13003au 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col
phe13003c.pdf
PHE13003C NPN power transistor Rev. 1 29 July 2010 Preliminary data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V High typical DC current gain 1.3 Applications Compact fluorescent l
phd13003c.pdf
PHD13003C NPN power transistor with integrated diode Rev. 01 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.2 Features and benefits Fast switching High voltage capability High typical DC current
st13003d-k.pdf
ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schemati
st13003.pdf
ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING 1 2 SWITCH MODE POWER SUPPLIES 3 DESCRIPTION SOT-32 The device is manufactured using high voltage Multi Epitaxial Planar te
stx13003 2.pdf
STX13003 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Compact fluorescent lamps (CFLs) TO-92 TO-92AP SMPS for battery charger Description Figure 1. Internal schematic diagram The device is manufactured
st13003-k.pdf
ST13003-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting (CFL) 3 SMPS for battery charger SOT-32 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram multi-epitaxi
stk13003.pdf
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std13003.pdf
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st13003dn.pdf
ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high swi
stx13003.pdf
STX13003 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description TO-92 TO-92AP The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure
st13003n.pdf
ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a
st13003 st13003-k.pdf
ST13003, ST13003-K High voltage fast-switching NPN power transistor Datasheet - production data Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 Electronic ballast for fluorescent lighting (CFL) 1 SMPS for battery charger SOT-32 Description Figure 1. Internal schematic diagram The device is manufact
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fjn13003.pdf
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kse13003t.pdf
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kse13003.pdf
March 2008 KSE13003 NPN Silicon Transistor High Voltage Switch Mode Applications High Voltage Capability High Speed Switching Suitable for Switching Regulator and Motor Control TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings* TC = 25 C unless otherwise noted (notes_1) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter
kse13003t.pdf
KSE13003 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATIONS TO-126 High Speed Switching Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) IC 3
ksh13003.pdf
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dxt13003dg.pdf
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apt13003eu.pdf
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apt13003h.pdf
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dxt13003ek.pdf
DXT13003EK 460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 460V Case TO252 (DPAK) BVCES > 700V Case Material Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Terminals Finish - Ma
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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mje13003-p.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100 C *
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mje13003.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100 C * Indu
mje13003-e.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator s,inverters, DC-DC converter, Motor co
mje13003d-p.pdf
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std13003d.pdf
STD13003D NPN Silicon Power Transistor Applications PIN Connection Power amplifier application High current switching application Features High speed switching VCEO(sus)=400V Suitable for Switching Regulator and Motor Control TO-252 Ordering Information Type NO. Marking Package Code STD13003D STD13003 TO-252 Absolute Maximum Ratings (Ta=25 )
std13003l.pdf
STD13003L NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code E C B E STD13003L STD13003 TO-92L Absolute Maximum Ratings (Ta=25 C) Characteristic Symbol Rating Unit Collector-base
std13003q.pdf
STD13003Q NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control B Ordering Information Type NO. Marking Package Code E C B E STD13003Q STD13003 TO-92 Absolute Maximum Ratings (Ta=25 ) Characteristic Symbol Ratings Unit Collector-base
bd13003b.pdf
BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 A B Range 2-2.5 ( s) 2.5-3 ( s) E F Product-Rank BD13003B-B1 BD13003B-B2 C N H Range 3-3.5 ( s) 3.5
3dd13003b.pdf
3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2
czd13003.pdf
CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252 FEATURES Power Switching Applications PACKAGE INFORMATION Package MPQ Leader Size A C B D TO-252 2.5K 13 inch G E K H F N O P M J Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Ma
pzt13003.pdf
PZT13003 1.5A , 700V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-223 FEATURES For AF driver and output stages Power switching applications A M 4 CLASSIFICATION OF hFE Top View C B Product-Rank PZT13003-A PZT13003-B PZT13003-C 1 2 3 Range 8 20 15 30 25 40 K L E
ts13003bct.pdf
TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
ts13003mv.pdf
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ts13003 d07.pdf
TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition Pin Definition PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto
ts13003hv a07.pdf
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ts13003ck-ct.pdf
TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition PRODUCT SUMMARY 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1.5A VCE(SAT) 1V @ IC =0.5A, IB =0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
ts13003b c07.pdf
TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
ts13003hv.pdf
TS13003HV High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
c13003.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 600 V Collector -Emitter ( sus) Voltage
mjd13003.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTOR MJD13003 DPAK (TO-252) Plastic Package Designed for High Voltage, High Speed Power Switching Inductive Circuits Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 400 V Collector Emitter Voltage VCEV 700 V Emit
cd13003.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13003 TO126 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 600 V VCEO Collector Emitter (sus) Voltage 400 V Emitter Base Voltage VEBO 9
cd13003d.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13003D TO126 Plastic Package With Built - in Integrated Diode between Emitter & Collector ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 600 V Collector Emitter (sus) Voltage VCEO 400 V Emitter Base Voltage VEBO 9.0 V Collector
cr13003.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package E C B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 700 V VCEO Collector Emitter (sus) Voltage 400 V Emitter Base Voltage VEBO 9.0 V
cdt13003.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CDT13003 TO-220 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 600 V VCEO Collector Emitter (sus) Voltage 400 V Emitter Base Voltage VEBO
csl13003.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13003 HIGH VOLTAGE SWITCHING TRANSISTOR TO-92 Plastic Package B C E Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 600 V VCEO Collecto
3dd13003b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol
3dd13003.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) TO-252-2L FEATURES 1. BASE Power Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V
3dd13003n3.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES 1 . BASE Power switching applications Good high temperature 2. COLLECTOR Low saturation voltage 3. EMITTER High speed switching Equivalent Circuit Logo 13003N3=Device code 13003N3 ORDERING INFORMATION Part Number Package Packi
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 MJE13003 TRANSISTOR (NPN) FEATURES Power Switching Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 . BASE Symbol Parameter Value Unit 2. COLLECTOR VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V 3. EMITTER VEBO Emitter-Base Volta
mje13003hv.pdf
SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 _ + F 11.0 0.3
mje13003.pdf
SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G ton=1.1 S(Max.), at IC=1A S(Max.), tf=0.7 H High Collector Voltage VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 _ + F 1
13003-a-b-c-d-e-f.pdf
13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES High Voltage Capability High Speed Switching Wide SOA APPLICATIONS Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Curr
3dd13003 to-220-3l.pdf
3DD13003(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou
3dd13003 to-126.pdf
3DD13003(NPN) TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 3.EMITTER 3 2 1 Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.500 7.400 2.900 1.100 7.800 Symbol Parameter Value Units 1.500 VCBO Collector-Base Voltage 700 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 400 V 3.200 10.600 0.000 VEBO Emitter-Base V
3dd13003b.pdf
3DD13003B(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector-Base Voltage 700 V 1.40 2.03 2.67 VCEO Collector-Emitter Voltage 400 V
3dd13003b.pdf
WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES power switching applications TO-92 MAXIMUM RATINGS (T unless otherwise noted) A=25 C Parameter Symbol Value Units Collector-Base Voltage V VCBO 700 Collector-Emitter Voltage V VCEO 400 Emitter-Base Voltage 9 V VEBO A Collector Current -Continuous IC 1.5 Col
mje13003b.pdf
WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enh
hi13003.pdf
Spec. No. HE9034 HI-SINCERITY Issued Date 1999.03.17 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/4 HI13003 NPN EPITAXIAL PLANAR TRANSISTOR Description These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switchmode applications such as Switching Regul
hmje13003d.pdf
Spec. No. HD200207 HI-SINCERITY Issued Date 1993.04.12 Revised Date 2007.09.04 MICROELECTRONICS CORP. Page No. 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings
hmje13003.pdf
Spec. No. HT200210 HI-SINCERITY Issued Date 2001.01.01 Revised Date 2010.03.16 MICROELECTRONICS CORP. Page No. 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-126 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T
hmje13003e.pdf
Spec. No. HE200502 HI-SINCERITY Issued Date 2005.10.01 Revised Date 2009.10.14 MICROELECTRONICS CORP. Page No. 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-220 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (
mje13003b.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE
mje13003brh.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ
mje13003ht 1.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ
mje13003ht.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HT MJ
3dd13003a.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003A MAIN CHARACTERISTICS Package I 1.5A C V 450V CEO P (TO-92) 1W C P (DPAK/IPAK) 10W C P (TO-126) 20W C P (TO-220) 40W C TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballast
3dd13003v1d.pdf
NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003V1D APPLICATIONS Package Energy-saving ligh Electronic ballasts Electronic transformer Commonly power amplifier circuit FEATURES M
btn13003d3.pdf
Spec. No. C827D3 Issued Date 2012.04.09 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003D3 Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003D3 TO-126ML B Base C Collector E Emitter E C B Abs
btn13003t3.pdf
Spec. No. C827T3 Issued Date 2012.04.09 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003T3 Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003T3 TO-126 B Base C Collector E Emitter B C E Absol
cs13003 1.5a 1.25w to-126.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsula
cs13003 1a 1w to-126.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsula
cs13003 to-92 1.2a.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate T
cs13003 to-92.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate T
cs13003 1a 0.9w to-251.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsula
cs13003 1.2a to-251.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsulate Transistors TO-251 Plastic-Encapsula
mje13003vk1.pdf
MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore
mje13003k4.pdf
MJE13003K4 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting, sw
mje13003f1.pdf
MJE13003F1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency electroni
br3dd13003vk1k.pdf
MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore
mje13003f5.pdf
MJE13003F5 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency
mje13003vk7.pdf
MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V
r13003f1.pdf
R13003F1(BR3DA13003F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency
mje13003ft.pdf
MJE13003FT Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications,conv
mje13003i5.pdf
MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High
mje13003di1g.pdf
MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications
br3dd13003vk7r.pdf
MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V
st13003.pdf
ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Co
st13003h.pdf
ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Emitter Voltage VCES 900 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 9 V Collector Current (f 100 Hz, Duty cycle 50 %)
st13002t st13003t.pdf
ST 13002T / 13003T NPN Silicon Power Transistors E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400 Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 V Collector Current IC 1.5 A Peak Collector Current at t = 5 ms ICM 3 A Base C
3dd13003m8d.pdf
NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60
3dd13003f3d.pdf
NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W
3dd13003 k8.pdf
NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W
3dd13003u1d.pdf
NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W
3dd13003h6d.pdf
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
3dd13003u3d.pdf
NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W
3dd13003 m6d.pdf
NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W
3dd13003h3d.pdf
R NPN 3DD13003H3D 1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25
3dd13003u6d.pdf
NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W
3dd13003 k6.pdf
NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W
3dd13003m6d.pdf
NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50
3dd13003 f6d.pdf
NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W
3dd13003h8d.pdf
NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W
3dd13003 u1d.pdf
NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W
3dd13003e6d.pdf
NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
3dd13003 m8d.pdf
NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60
3dd13003 u3d.pdf
NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W
h13003h.pdf
R H13003H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger Computer aided power and Switch-mode power supplies 2 2 2 FEATURES
h13003d 2.pdf
R H13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
s13003ad 3.pdf
R P13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
p13003d.pdf
R P13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
s13003a-d.pdf
R S13003A-D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast Charger and Switch-mode power supplies 2
h13003ah.pdf
R H13003AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 H
13003b.pdf
R 13003B www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2 F
h13003d.pdf
R H13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
13003ad.pdf
R 13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
s13003ad-h.pdf
R S13003AD-H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Charger and Switch-mode power supplies 2 2 2 FEATURES 2 High voltage c
p13003.pdf
R P13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Charger and Switch-mode power supplies 2 2 2 FEATURES 2
h13003d 3.pdf
R H13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Fluorescent Lamp Electronic Ballast and Switch-mode power supplies 2 2 2
mje13003t.pdf
SEMICONDUCTOR MJE13003T TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. D FEATURES E A Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A C F G DIM MILLIMETERS High Collector Voltage VCBO=700V. B A 8.3 MAX B 11.3 0.3 C 4.15 TYP 1 2 3 D 3.2 0.2 E 2.0 0.2 H F 2.8 0.1 I G 3.2 0.1 MAXIMUM RA
mje13003b.pdf
SEMICONDUCTOR MJE13003B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=0.5 S(Max.), tf=0.7 S(Max.), at IC=1A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _ MA
mje13003a.pdf
SEMICONDUCTOR MJE13003A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _
mje13003d.pdf
SEMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.5 S(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 0 2 High Collector Voltage VCBO=700V. B 5 60 0 2 C 5 20 0 2 D 1 50 0 2 MAXIMUM RATING (Ta=25 C) E 2 70 0 2 F 2 30 0 1
mje13003 to126.pdf
SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. TO-126 FEATURES Excellent Switching Times ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1.5A 1.BASE High Collector Voltage VCBO=700V. 2.COLLECTOR 3.EMITTER MAXIMUM RATING (Ta=25 C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT VC
mje13003i.pdf
SEMICONDUCTOR MJE13003I TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. DIM MILLIMETERS A 2.20 0.2 B 1.50 0.15 FEATURES c 0.5 0.07 Excellent Switching Times D 6.50 0.15 1 2 3 ton=1.1 S(Max.), tf=0.5 S(Max.), at IC=1.0A e 2.30 typ L 7.70 0.2 High Collector Voltage VCBO=700V. A1 1.20 0.05 b1 0.8 0.1
mjd13003.pdf
SMD Type Transistors NPN Transistors MJD13003 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Power Switching Applications 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
3dd13003.pdf
SMD Type Transistors NPN Transistors 3DD13003 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V 0.42 0.1 0.46 0.1 Power Switching Applications 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi
ksu13003h.pdf
DIP Type Transistors NPN Transistors KSU13003H TO-251 Unit mm 6.6 0.2 2.3 0.1 5.35 0.15 0.5 0.05 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=530V High Voltage, High Speed Switching 1 2 3 0.75 0.15 0.8 0.15 0.5+0.1 0.6 0.1 -0.05 2.3typ 1.2 0.3 2.3typ 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Ta =
njm13003-1.63.pdf
DIP Type Transistors NPN Transistors NJM13003-1.63 TO-126 Unit mm 8.00 0.30 3.25 0.20 Features High voltage capability 3.20 0.10 High speed switching Wide SOA (1.00) (0.50) 0.75 0.10 ROHS compliant 1.75 0.20 1.60 0.10 0.75 0.10 #1 +0.10 2.28TYP 2.28TYP 0.50 0.05 [2.28 0.20] [2.28 0.20] 1. Base 2. Collector 3. Emitter Absol
wbd13003d.pdf
WBD13003D WBD13003D WBD13003D WBD13003D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such
sbn13003hb.pdf
SBN13003HB High Voltage Fast Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value
wbr13003b2.pdf
WBR13003B2 WBR13003B2 WBR13003B2 WBR13003B2 High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
wbr13003d.pdf
WBR13003D WBR13003D WBR13003D WBR13003D High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description General Description General Description General Description This Device is designed for high voltage, High speed switc
wbp13003d.pdf
WBP13003D WBP13003D WBP13003D WBP13003D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics required such
sbp13003h.pdf
SBP13003H SBP13003H SBP13003H SBP13003H High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter
sbr13003b.pdf
SBR13003B SBR13003B SBR13003B SBR13003B High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Paramet
wbn13003b2d.pdf
WBN13003B2D WBN13003B2D WBN13003B2D WBN13003B2D High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply.
wbr13003b3.pdf
WBR13003B3 WBR13003B3 WBR13003B3 WBR13003B3 High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for
wbr13003d1.pdf
WBR13003D1 WBR13003D1 WBR13003D1 WBR13003D1 High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description General Description General Description General Description This Device is designed for high voltage, High speed s
wbr13003.pdf
WBR13003 WBR13003 WBR13003 WBR13003 High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter T
sbr13003bd.pdf
SBR13003BD SBR13003BD SBR13003BD SBR13003BD HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switchin
sbp13003o.pdf
SBP13003-O SBP13003-O SBP13003-O SBP13003-O High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G
wbr13003ld.pdf
WBR13003LD WBR13003LD WBR13003LD WBR13003LD High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability High Voltage Capability Wide Soa Bu
sbn13003a.pdf
SBN13002D SBN13002D SBN13002D SBN13002D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol 2.Collector Very High Switching Speed High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter Built -in freewheeling diode General Description This Device is designed for high voltage, high speed switching characteristics required suc
wbn13003b.pdf
WBN13003B WBN13003B WBN13003B WBN13003B HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Tes
sbn13003a1.pdf
SBN13003A1 SBN13003A1 SBN13003A1 SBN13003A1 High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed switching Characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
sbp13003d.pdf
SBP13003D SBP13003D SBP13003D SBP13003D High Voltage Fast -Switching NPN Power Transistor Features symbol symbol symbol symbol Very High Switching Speed 2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics requir
wbr13003b2d.pdf
WBR13003B2D WBR13003B2D WBR13003B2D WBR13003B2D High Voltage Fast -Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply.
wbr13003x.pdf
WBR13003X WBR13003X WBR13003X WBR13003X High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description Gener
wbr13003b.pdf
WBR13003B WBR13003B WBR13003B WBR13003B HighVoltageFast-SwitchingNPNPowerTransistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Parameter Tes
wbr13003l2.pdf
WBR13003L2 WBR13003L2 WBR13003L2 WBR13003L2 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheel
sbr13003d.pdf
SBR13003D SBR13003D SBR13003D SBR13003D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling
sbr13003h.pdf
SBR13003H High Voltage Fast Switching NPNPower Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value U
sbr13003b1.pdf
SBR13003B1 SBR13003B1 SBR13003B1 SBR13003B1 High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description G
wbn13003a1.pdf
WBN13003A1 WBN13003A1 WBN13003A1 WBN13003A1 High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed switching Characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol Par
sbu13003bd.pdf
SBU13003BD High Voltage Fast-Switching NPN Power Transistor Features symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Rat
apt13003hu-hz.pdf
Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003H General Description Features The APT13003H series are high voltage, high speed High Switching Speed switching NPN power transistors specially designed High Collector-emitter Voltage for off-line switch mode power supplies with low out- Low Cost put power. Applications The APT13003H series are available
apt13003eu-ez.pdf
Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E General Description Features The APT13003E series are high voltage, high speed High Switching Speed switching NPN Power transistors specially designed High Collector-Emitter Voltage for off-line switch mode power supplies with low out- Low Cost put power. Bulk and Ammo Packing TO-92 Package and TO-12
apt13003su-sz.pdf
Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003S General Description Features The APT13003S series are high voltage, high speed High Switching Speed switching transistors specially designed for off-line High Collector-Emitter Voltage switch mode power supplies with low output power. Low Cost Bulk and Ammo Packing TO-92 Package and The APT13003S seri
apt13003lz.pdf
Data Sheet HIGH VOLTAGE NPN TRANSISTOR APT13003L General Description Features The APT13003L series are high voltage, high speed High Switching Speed switching NPN power transistor specially designed for High Collector-Emitter Voltage off-line switch mode power supplies with low output Low Cost power. Applications The APT13003L series is available in TO-92 package. Batt
apt13003di-du-dz.pdf
Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D General Description Features The APT13003D is a high voltage, high speed, high High Switching Speed efficiency switching transistor, and it is specially High Collector-Emitter Voltage 700V designed for off-line switch mode power supplies with Low Cost low output power. High Efficiency The APT13003D
3n13003gp.pdf
CHENMKO ENTERPRISE CO.,LTD 3N SMALL FLAT NPN Epitaxial Transistor VOLTAGE 0 Volts CURRENT Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (TO-126) TO-126 * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. .114(2.90) .307(7.80) .059(1.50) .098(2.50) .291(7.40) CONSTRUCTION .043(1.10) .161(4.1
mje13003n5.pdf
MJE13003N5(3DD13003N5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003l1.pdf
MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V
mje13003vg1.pdf
MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 400 V VCE
mje13003dn5.pdf
MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003j1g.pdf
MJE13003J1G(3DD13003J1G) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V
mje13003k4.pdf
MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003h1.pdf
MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO
mje13003dk1.pdf
MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003e1.pdf
MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003h6.pdf
MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003f1.pdf
MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003i7.pdf
MJE13003I7(3DD13003I7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003di5.pdf
MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V
mje13003i6.pdf
MJE13003I6(3DD13003I6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003di1.pdf
MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003g1.pdf
MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003h5.pdf
MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003hn6.pdf
MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR Purpose For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25 ) 1.25 W C P
mje13003k3.pdf
MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003dk3.pdf
MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003vn5.pdf
MJE13003VN5(3DD13003VN5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V
mje13003k7.pdf
MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003dg1.pdf
MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003hk5.pdf
MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V
mje13003g5.pdf
MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003dk5.pdf
MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003dg5.pdf
MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700
mje13003k5.pdf
MJE13003K5(3DD13003K5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003vf1.pdf
MJE13003VF1(3DD13003VF1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V
mje13003m7.pdf
MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003i1.pdf
MJE13003I1(3DD13003I1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003f2.pdf
MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003f5.pdf
MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003vi5.pdf
MJE13003VI5 3DD13003VI5 NPN /SILICON NPN TRANSISTOR Purpose High voltage capability,high speed switching,wide SOA. 110V Features Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. /Absolute maximum ratings(Tc=25
mje13003j1.pdf
MJE13003J1(3DD13003J1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V
mje13003k6.pdf
MJE13003K6(3DD13003K6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003f6.pdf
MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003h3.pdf
MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003lf5.pdf
MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V
mje13003m8.pdf
MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003l5.pdf
MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V
mje13003m5.pdf
MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 700 V VCEO
mje13003n8.pdf
MJE13003N8(3DD13003N8) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003vi1.pdf
MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(
mje13003m6.pdf
MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003lf1.pdf
MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V
mje13003vh5.pdf
MJE13003VH5 3DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.
mje13003k8.pdf
MJE13003K8(3DD13003K8) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003di3.pdf
MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V
mje13003ft.pdf
MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003vn7.pdf
MJE13003VN7(3DD13003VN7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V
mje13003l3.pdf
MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V
mje13003g6.pdf
MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003l6.pdf
MJE13003L6(3DD13003L6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 900 V
mje13003m3.pdf
MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
mje13003dk7.pdf
MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
mje13003vg5.pdf
MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 400 V VCE
mje13003m1.pdf
MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V
ksb13003c.pdf
KSB13003C SEMIHOW REV.A0, January 2012 KSB13003C KSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E
ksu13003er.pdf
KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ER KSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute M
ksh13003a.pdf
KSH13003A KSH13003A SEMIHOW REV.A1,Jan 2008 KSH130 003A KSH13003A High Voltage Switch Mode Applications gg pp High Speed Switching Suitable for Switching Regulator and Motor Control 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 30 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Bas
ksc13003h.pdf
KSC13003H SEMIHOW REV.A1,Oct 2007 KSC13003H KSC13003H Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 20 Watts TO-126 CHARACTERISTICS SYMBOL RATING UNIT 1. Base
ksb13003ar.pdf
KSB13003AR KSB13003AR SEMIHOW REV.A2,Oct 2007 KSB130 003AR KSB13003AR High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W 150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless
ksg13003ar.pdf
KSG13003AR SEMIHOW REV.A0,Mar 2009 KSG13003AR KSG13003AR Switch Mode series NPN silicon Power Transistor High voltage, high speed power switching 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.5 Watts TO-92L CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector 3. Base Collector-Base Voltage VCBO 700 V Collector
ksd13003e.pdf
KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003E KSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum
ksb13003h.pdf
KSB13003H SEMIHOW REV.A0,Oct 2007 KSB13003H KSB13003H High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitte
ksd13003er.pdf
KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ER KSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute M
ksc13003a.pdf
KSC13003A KSC13003A SEMIHOW REV.A1,Oct 2007 KSC130 003A KSC13003A Switch Mode series NPN silicon Power Transistor Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 20 Watts TO-1
ksb13003a.pdf
KSB13003A KSB13003A SEMIHOW REV.A1,Oct 2007 KSB130 003A KSB13003A High Voltage Switch Mode Application gg pp High Speed Switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitter Collector-B
ksu13003e.pdf
KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003E KSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum
ksb13003hr.pdf
KSB13003HR KSB13003HR SEMIHOW REV.A0,Oct 2007 KSB130 003HR KSB13003HR High Voltage Switch Mode Application gg pp High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collect
ksb13003er.pdf
KSB13003ER KSB13003ER SEMIHOW REV.A0,Apr 2008 KSB130 003ER KSB13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100 , R=1.5 ) 1.5 Amperes NPN Silicon Power Transistor Absolute M
ksb13003cr.pdf
KSB13003CR SEMIHOW REV.A0, January 2012 KSB13003CR KSB13003CR High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector
ksu13003hr.pdf
KSU13003HR SEMIHOW REV.A0,July 2011 KSU13003HR KSU13003HR Switch Mode series NPN silicon Power Transistor High Voltage, High Speed Switching Suitable for switching regulator, inverters motor controls 2 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 25 Watts TO-251 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter
sbr13003a.pdf
SBR13003A SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol 2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation 1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A 3.Emitter General Description TO-126 This devices is designed for high voltage, high speed s
sbp13003.pdf
SBP13003 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol 2.Collector - Very High Switching Speed - Minimum Lot-to-Lot hFE Variation 1.Base - Short storge time - Wide Reverse Bias S.O.A 3.Emitter General Description TO-220 This devices is designed for high voltage, high speed switching characteristic,especially suitable for ba
sl13003.pdf
SL13003 TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25
sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf
SL13003 TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25
alj13003.pdf
SUNROC ALJ13003 TRANSISTOR(NPN) FEATURES power switching applications MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 1.2 A PC Collector Power Dissipation 25 W TJ Junction Temperature 150 Tstg Storage Temperature -55
tsl13003.pdf
Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case TO-92, Plastic Package Terminals Solderable per MIL-STD-202G, Method 208 Weight 0.18 gram Maximum Ratings (T =25 C unless note
3dd13003h6d.pdf
NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W
3dd13003e6d.pdf
NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
ht13003.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors HT13003 (AFO) TRANSISTOR (NPN) TO-126C FEATURES 1.BASE power switching applications 2.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-B
hr13003.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 HR13003 TRANSISTOR (NPN) FEATURES High total power disspation. (pc=1.25w) MARKING MJE13003 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 4
mot13003c mot13003d.pdf
MOT MOT13003C/MOT13003D NPN SILICON TRANSISTOR Symbol PRODUCT CHARACTERISTICS BVCBO 700V BVCEO 400V 10-40 HFE@5V1A IC 1.5A FEATURES * Inductive switching matrix 0.5 1.5 Amp, 25 and 100 C Typical tc = 290ns @ 1A, 100 C. * 700V blocking capability APPLICATIONS * Switching regulator s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuit
phe13003a.pdf
PHE13003A NPN power transistor 3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Electronic li
phe13003c.pdf
PHE13003C NPN power transistor 13 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses 3. Applications Compac
phd13003c.pdf
IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where
gt13003y.pdf
GT13003Y High Voltage And High Speed Switching Transistors TO-252 0.094(2.38) 0.264(6.70) Features 0.087(2.20) 0.256(6.50) 0.022(0.56) 0.215(5.46) 0.018(0.46) 0.202(5.13) 2 =1.65A =800V 0.055(1.40) 0.031(0.80) 0.244(6.20) 0.236(6.00) 0.051(1.30) 0.409(10.40) 0.004(0.10) 0.043(1.10) 0.386( 9.80) MAX. 1 2 3 0.114(2.90) 0.067(1.70) REF. 0.055(1.40) 0.032(0.81) 0.022(0
h13003h.pdf
H13003H High Voltage Switching Transister 2A, 850V MJE13003U H13003HU TO-251 80Pcs/ 4Kpcs 24Kpcs 13003 MJE13003D H13003HD TO-252 2.5K/ 5Kpcs 25Kpcs H13003H Series H13003H Series Pin Assignment NPN EPITAX
mjd13003.pdf
isc Silicon NPN Power Transistor MJD13003 DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.0(Max) @ I = 1.0A CE(sat) C APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulato
mje13003a.pdf
isc Silicon NPN Power Transistor MJE13003A DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.0(Max) @ I = 1.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are p
mje13003d.pdf
INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 7
mje13003.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;c
Другие транзисторы: 2N5152L, 2N5153L, 2N5154L, 2N6193U3, WT5611, WT5650, WT5651, WT5652, BC548, 13003A, 13003C, 13003D, 13003E, 13003F, 1165905, 3CA3505, 3CA2505
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