All Transistors. 13003 Datasheet

 

13003 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 13003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO126

 13003 Transistor Equivalent Substitute - Cross-Reference Search

   

13003 Datasheet (PDF)

 ..1. Size:248K  cdil
mje13002 13003.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002MJE13003TO-126 Plastic PackageSuitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers andDeflection CircuitsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MJE13002 MJE13003 UNITVCEO(sus)Collector Emitter Voltage 300

 0.2. Size:148K  philips
phe13003a.pdf

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PHE13003ANPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

 0.3. Size:50K  philips
phe13003au 1.pdf

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Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

 0.4. Size:254K  philips
phe13003c.pdf

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PHE13003CNPN power transistorRev. 1 29 July 2010 Preliminary data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V High typical DC current gain1.3 Applications Compact fluorescent l

 0.5. Size:136K  philips
phd13003c.pdf

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PHD13003CNPN power transistor with integrated diodeRev. 01 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package1.2 Features and benefits Fast switching High voltage capability High typical DC current

 0.6. Size:141K  st
st13003d-k.pdf

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ST13003D-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode123ApplicationsSOT-32 Electronic ballast for fluorescent lightingDescriptionFigure 1. Internal schemati

 0.7. Size:80K  st
st13003.pdf

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ST13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING12 SWITCH MODE POWER SUPPLIES3DESCRIPTIONSOT-32The device is manufactured using high voltageMulti Epitaxial Planar te

 0.8. Size:243K  st
stx13003 2.pdf

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STX13003High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLs)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured

 0.9. Size:218K  st
st13003-k.pdf

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ST13003-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications12 Electronic ballast for fluorescent lighting (CFL)3 SMPS for battery chargerSOT-32DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagrammulti-epitaxi

 0.10. Size:217K  st
stk13003.pdf

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STK13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STK13003 IS REVERSE PINS OUT VsSTANDARD SOT-82 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIESSOT-82DESCRIPTION The device is

 0.11. Size:266K  st
std13003.pdf

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STD13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED11 SURFACE-MOUNTING DPAK (TO-252)233POWER PACKAGE IN TAPE & REEL (Suffix"T4") THROUGH-HOLE IPAK (TO-2

 0.12. Size:163K  st
st13003dn.pdf

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ST13003DNHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode3Application 21 Compact fluorescent lamps (CFLs)SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high swi

 0.13. Size:329K  st
stx13003.pdf

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STX13003High voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speedApplications Compact fluorescent lamps (CFLs) SMPS for battery chargerDescriptionTO-92 TO-92APThe device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure

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st13003n.pdf

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ST13003NHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplication32 Compact fluorescent lamps (CFLs)1SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a

 0.15. Size:241K  st
st13003 st13003-k.pdf

13003 13003

ST13003, ST13003-KHigh voltage fast-switching NPN power transistorDatasheet - production dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications32 Electronic ballast for fluorescent lighting (CFL)1 SMPS for battery chargerSOT-32DescriptionFigure 1. Internal schematic diagramThe device is manufact

 0.16. Size:175K  toshiba
ttc13003l.pdf

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TTC13003LBipolar Transistors Silicon NPN Triple-Diffused TypeTTC13003LTTC13003LTTC13003LTTC13003L1. Applications1. Applications1. Applications1. Applications High-Speed Switching for Inverter Lighting Equipment2. Features2. Features2. Features2. Features(1) Suitable for RCC circuits.(guaranteed small current hFE):hFE = 10(min)(IC = 1 mA)(2) High speed: tf =

 0.17. Size:49K  fairchild semi
fjn13003.pdf

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FJN13003High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21WTO-9211. Emitter 2. Collector 3.BaseNPN Silicon Transistor Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Volta

 0.18. Size:47K  fairchild semi
kse13003t.pdf

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KSE13003THigh Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC C

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kse13003.pdf

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March 2008KSE13003NPN Silicon TransistorHigh Voltage Switch Mode Applications High Voltage Capability High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter

 0.20. Size:21K  samsung
kse13003t.pdf

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KSE13003 NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-126 High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) IC 3

 0.21. Size:23K  samsung
ksh13003.pdf

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KSH13003 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORD-PAKD-PACK FOR SURFACE MOUNT APPLICATIONS High speed Switching Suitable for Switching Regulator Motor Control Straight Lead(I.PACK, I Suffix)1 Lead Formed for Surface Mount Applications(No Suffix)1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitI-PAK

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dxt13003dk.pdf

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DXT13003DK450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 450V Case: TO252 (DPAK) BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Integrated Anti-Parall

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dxt13003dg.pdf

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DXT13003DG450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 450V Case: SOT223 BVCES > 700V Case Material: Molded Plastic. Green Molding Compound BVEBO > 9V UL Flammability Rating 94V-0 IC = 1.5A high Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 Integrated Collector-Emitter Diode to act

 0.24. Size:629K  diodes
apt13003eu.pdf

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PART OBSOLETE NO ALTERNATE PART APT13003EU Green465V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 465V Case: TO126 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 1.5A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per M

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apt13003h.pdf

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APT13003H Green465V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 465V Case: TO92 (Type C) BVCES > 800V Case Material: Molded Plastic, "Green" Molding Compound; BVEBO > 9V UL Flammability Classification Rating 94V-0 IC = 1.5A High Continuous Collector Current Terminals: Matte Tin Finish; Lead-Free Finish; RoHS Compliant (Notes

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dxt13003ek.pdf

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DXT13003EK460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 460V Case: TO252 (DPAK) BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Terminals: Finish - Ma

 0.27. Size:163K  onsemi
kse13003t.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.28. Size:581K  onsemi
kse13003.pdf

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.29. Size:107K  onsemi
mje13003.pdf

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MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

 0.30. Size:107K  onsemi
mje13003g.pdf

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MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

 0.31. Size:136K  utc
13003ada.pdf

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UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1

 0.32. Size:308K  utc
mje13003k.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100C * Inductive switching ma

 0.33. Size:166K  utc
13003dw.pdf

13003 13003

UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage and high reliability, etc. The UTC 13003DW is suitable for electronic

 0.34. Size:204K  utc
mje13003d.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread

 0.35. Size:166K  utc
13003dh.pdf

13003 13003

UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

 0.36. Size:140K  utc
13003eda.pdf

13003 13003

UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1

 0.37. Size:165K  utc
13003bs.pdf

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UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

 0.38. Size:158K  utc
13003df.pdf

13003 13003

UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

 0.39. Size:358K  utc
mje13003-p.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100C *

 0.40. Size:159K  utc
13003de.pdf

13003 13003

UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable

 0.41. Size:407K  utc
mje13003.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100C * Indu

 0.42. Size:274K  utc
mje13003-e.pdf

13003 13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorco

 0.43. Size:126K  utc
mje13003d-p.pdf

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UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W

 0.44. Size:317K  auk
std13003d.pdf

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STD13003DNPN Silicon Power TransistorApplications PIN Connection Power amplifier application High current switching application Features High speed switching VCEO(sus)=400V Suitable for Switching Regulator and Motor Control TO-252 Ordering Information Type NO. Marking Package Code STD13003D STD13003 TO-252Absolute Maximum Ratings (Ta=25)

 0.45. Size:278K  auk
std13003l.pdf

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STD13003LNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code E C B ESTD13003L STD13003 TO-92LAbsolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating UnitCollector-base

 0.46. Size:288K  auk
std13003q.pdf

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STD13003QNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code E C B ESTD13003Q STD13003 TO-92Absolute Maximum Ratings (Ta=25) Characteristic Symbol Ratings UnitCollector-base

 0.47. Size:765K  secos
bd13003b.pdf

13003 13003

BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 ABRange 2-2.5 (s) 2.5-3 (s) EFProduct-Rank BD13003B-B1 BD13003B-B2 CNHRange 3-3.5 (s) 3.5

 0.48. Size:2520K  secos
3dd13003b.pdf

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3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADMillimeter REF. Min. Max. BA 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E CF 0.36 0.51 FG 1.27 TYP. H 1.10 - J 2

 0.49. Size:71K  secos
czd13003.pdf

13003

CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252 FEATURES Power Switching Applications PACKAGE INFORMATION Package MPQ Leader Size ACBDTO-252 2.5K 13 inch G EK H FNOPM J Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Ma

 0.50. Size:421K  secos
pzt13003.pdf

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PZT13003 1.5A , 700V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-223FEATURES For AF driver and output stages Power switching applications A M4CLASSIFICATION OF hFE Top ViewC BProduct-Rank PZT13003-A PZT13003-B PZT13003-C123Range 8~20 15~30 25~40K LE

 0.51. Size:399K  taiwansemi
ts13003bct.pdf

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TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 0.52. Size:441K  taiwansemi
ts13003mv.pdf

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TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 0.53. Size:333K  taiwansemi
ts13003 d07.pdf

13003 13003

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto

 0.54. Size:276K  taiwansemi
ts13003hv a07.pdf

13003 13003

TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 0.55. Size:164K  taiwansemi
ts13003ck-ct.pdf

13003 13003

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1.5A VCE(SAT) 1V @ IC =0.5A, IB =0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 0.56. Size:399K  taiwansemi
ts13003b c07.pdf

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TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 0.57. Size:192K  taiwansemi
ts13003hv.pdf

13003 13003

TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 0.58. Size:214K  cdil
c13003.pdf

13003 13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyC13003NPN SILICON POWER TRANSISTORTO126 Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 600VCollector -Emitter ( sus) Voltage

 0.59. Size:591K  cdil
mjd13003.pdf

13003 13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER TRANSISTOR MJD13003DPAK (TO-252)Plastic PackageDesigned for High Voltage, High Speed Power Switching Inductive Circuits ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 400 VCollector Emitter Voltage VCEV 700 VEmit

 0.60. Size:289K  cdil
cd13003.pdf

13003 13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003TO126 Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO 9

 0.61. Size:288K  cdil
cd13003d.pdf

13003 13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003DTO126 Plastic PackageWith Built - in Integrated Diode between Emitter & CollectorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 600 VCollector Emitter (sus) Voltage VCEO 400 VEmitter Base Voltage VEBO 9.0 VCollector

 0.62. Size:83K  cdil
cr13003.pdf

13003 13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CR13003TO126 Plastic PackageECBSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 700 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO 9.0 V

 0.63. Size:172K  cdil
cdt13003.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CDT13003 TO-220Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO

 0.64. Size:110K  cdil
csl13003.pdf

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13003 HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageBCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollecto

 0.65. Size:711K  jiangsu
3dd13003b.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol

 0.66. Size:5166K  jiangsu
3dd13003.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR ( NPN ) TO-252-2L FEATURES 1. BASE Power Switching Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base V

 0.67. Size:812K  jiangsu
3dd13003n3.pdf

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistor3DD13003N3 TRANSISTOR (NPN)TO-126 FEATURES 1 . BASE Power switching applications Good high temperature2. COLLECTOR Low saturation voltage3. EMITTER High speed switching Equivalent Circuit Logo13003N3=Device code 13003N3ORDERING INFORMATION Part Number Package Packi

 0.68. Size:416K  jiangsu
mje13003.pdf

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 MJE13003 TRANSISTOR (NPN) FEATURES Power Switching Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 . BASE Symbol Parameter Value Unit 2. COLLECTOR VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V 3. EMITTER VEBO Emitter-Base Volta

 0.69. Size:41K  kec
mje13003hv.pdf

13003 13003

SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3

 0.70. Size:53K  kec
mje13003.pdf

13003 13003

SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABHIGH VOLTAGE AND HIGH SPEED DCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Max.), at IC=1AS(Max.), tf=0.7HHigh Collector Voltage : VCBO=700V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 1

 0.71. Size:1045K  microelectronics
13003-a-b-c-d-e-f.pdf

13003 13003

13003HIGH VOLTAGE POWER TRANSISTORFEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value UnitCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 9 VCollector Curr

 0.72. Size:246K  lge
3dd13003 to-220-3l.pdf

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3DD13003(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou

 0.73. Size:205K  lge
3dd13003 to-126.pdf

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3DD13003(NPN) TO-126 TransistorTO-1261.BASE 2.COLLECTOR 3.EMITTER 3 2 1Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.5007.4002.9001.1007.800Symbol Parameter Value Units1.500VCBO Collector-Base Voltage 700 V 3.9003.0004.100VCEO Collector-Emitter Voltage 400 V 3.20010.6000.000VEBO Emitter-Base V

 0.74. Size:183K  lge
3dd13003b.pdf

13003 13003

3DD13003B(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector-Base Voltage 700 V 1.402.032.67VCEO Collector-Emitter Voltage 400 V

 0.75. Size:140K  wietron
3dd13003b.pdf

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WEITRON3DD13003BNPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : power switching applicationsTO-92MAXIMUM RATINGS (T unless otherwise noted)A=25CParameter Symbol Value UnitsCollector-Base Voltage VVCBO 700Collector-Emitter Voltage VVCEO 400Emitter-Base Voltage 9 VVEBOACollector Current -Continuous IC 1.5Col

 0.76. Size:178K  wietron
mje13003b.pdf

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WEITRONMJE13003BHigh Voltage Fast-switchingCOLLECTOR2.NPN Power TransistorP b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEDESCRIPTION:1.The device is manufactured using high voltageEMITTERTO-92Multi Epitaxial Planar technology for high switchingspeeds and medium voltage capability.It uses a Cellular Emitter structure with planar edgetermination to enh

 0.77. Size:50K  hsmc
hi13003.pdf

13003 13003

Spec. No. : HE9034HI-SINCERITYIssued Date : 1999.03.17Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HI13003NPN EPITAXIAL PLANAR TRANSISTORDescriptionThese devices are designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switchmode applications such as Switching Regul

 0.78. Size:51K  hsmc
hmje13003d.pdf

13003 13003

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings

 0.79. Size:140K  hsmc
hmje13003.pdf

13003 13003

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-126 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

 0.80. Size:83K  hsmc
hmje13003e.pdf

13003 13003

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-220 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

 0.81. Size:232K  sisemi
mje13003d 1.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

 0.82. Size:385K  sisemi
mje13003br.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE

 0.83. Size:206K  sisemi
mje13003b.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE

 0.84. Size:477K  sisemi
mje13003d.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

 0.85. Size:233K  sisemi
mje13003 2.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

 0.86. Size:385K  sisemi
mje13003brh.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJ

 0.87. Size:212K  sisemi
mje13003ht 1.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

 0.88. Size:430K  sisemi
mje13003.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

 0.89. Size:550K  sisemi
mje13003ht.pdf

13003 13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

 0.90. Size:489K  jilin sino
3dd13003a.pdf

13003 13003

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13003A MAIN CHARACTERISTICS Package IC 1.5A VCEO 450V PC(TO-92-FJ/TO-92-FJ-F1) 1W PC(DPAK/IPAK) 10W PC(TO-126) 20W PC(TO-220) 40W TO-92-FJ TO-126 APPLICATIONS TO-220 IPAK Battery changer Electronic ballasts

 0.91. Size:231K  jilin sino
3dd13003e1d.pdf

13003 13003

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD13003E1D MAIN CHARACTERISTICS Package IC 1.5AVCEO 400VPC(TO-92) 1W APPLICATIONS Energy-saving light TO-92 Electronic ballasts High frequency switching power supply

 0.92. Size:250K  cystek
btn13003d3.pdf

13003 13003

Spec. No. : C827D3 Issued Date : 2012.04.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003D3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003D3 TO-126ML BBase CCollector EEmitter E C B Abs

 0.93. Size:256K  cystek
btn13003t3.pdf

13003 13003

Spec. No. : C827T3 Issued Date : 2012.04.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003T3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003T3 TO-126 BBase CCollector EEmitter B C E Absol

 0.94. Size:179K  can-sheng
cs13003 1.5a 1.25w to-126.pdf

13003 13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

 0.95. Size:176K  can-sheng
cs13003 1a 1w to-126.pdf

13003 13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

 0.96. Size:177K  can-sheng
cs13003 to-92 1.2a.pdf

13003 13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate T

 0.97. Size:223K  can-sheng
cs13003 to-92.pdf

13003 13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate T

 0.98. Size:180K  can-sheng
cs13003 1a 0.9w to-251.pdf

13003 13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsula

 0.99. Size:177K  can-sheng
cs13003 1.2a to-251.pdf

13003 13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsula

 0.100. Size:418K  blue-rocket-elect
mje13003vk1.pdf

13003 13003

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

 0.101. Size:725K  blue-rocket-elect
mje13003k4.pdf

13003 13003

MJE13003K4 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features ,High voltage capability, high speed switching. / Applications High frequency electronic lighting, sw

 0.102. Size:774K  blue-rocket-elect
mje13003f1.pdf

13003 13003

MJE13003F1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency electroni

 0.103. Size:418K  blue-rocket-elect
br3dd13003vk1k.pdf

13003 13003

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

 0.104. Size:798K  blue-rocket-elect
mje13003f5.pdf

13003 13003

MJE13003F5 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency

 0.105. Size:446K  blue-rocket-elect
mje13003vk7.pdf

13003 13003

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

 0.106. Size:407K  blue-rocket-elect
r13003f1.pdf

13003 13003

R13003F1(BR3DA13003F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency

 0.107. Size:697K  blue-rocket-elect
mje13003ft.pdf

13003 13003

MJE13003FT Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications,conv

 0.108. Size:830K  blue-rocket-elect
mje13003i5.pdf

13003 13003

MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High

 0.109. Size:913K  blue-rocket-elect
mje13003di1g.pdf

13003 13003

MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications

 0.110. Size:446K  blue-rocket-elect
br3dd13003vk7r.pdf

13003 13003

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

 0.111. Size:160K  semtech
st13003.pdf

13003 13003

ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 600 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCo

 0.112. Size:615K  semtech
st13003h.pdf

13003 13003

ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Emitter Voltage VCES 900 VCollector Emitter Voltage VCEO 500 VEmitter Base Voltage VEBO 9 VCollector Current (f 100 Hz, Duty cycle 50 %)

 0.113. Size:644K  semtech
st13002t st13003t.pdf

13003 13003

ST 13002T / 13003T NPN Silicon Power Transistors E CB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 VCollector Current IC 1.5 APeak Collector Current at t = 5 ms ICM 3 ABase C

 0.114. Size:183K  crhj
3dd13003h1d.pdf

13003 13003

NPN R 3DD13003 H1D 3DD13003 H1D VCEO 400 V NPN IC 1.8 A Ptot Ta=25 0.8 W

 0.115. Size:151K  crhj
3dd13003 j6d.pdf

13003 13003

NPN R 3DD13003 J6D 3DD13003 J6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

 0.116. Size:155K  crhj
3dd13003m8d.pdf

13003 13003

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

 0.117. Size:152K  crhj
3dd13003 h8d.pdf

13003 13003

NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W

 0.118. Size:149K  crhj
3dd13003f3d.pdf

13003 13003

NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W

 0.119. Size:181K  crhj
3dd13003 h1d.pdf

13003 13003

NPN R 3DD13003 H1D 3DD13003 H1D VCEO 400 V NPN IC 1.8 A Ptot Ta=25 0.8 W

 0.120. Size:136K  crhj
3dd13003sud.pdf

13003 13003

NPN R 3DD13003 SUD 3DD13003 SUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

 0.121. Size:139K  crhj
3dd13003 vud.pdf

13003 13003

NPN R 3DD13003 VUD 3DD13003 VUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

 0.122. Size:153K  crhj
3dd13003 k8.pdf

13003 13003

NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W

 0.123. Size:183K  crhj
3dd13003u1d.pdf

13003 13003

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

 0.124. Size:151K  crhj
3dd13003h6d.pdf

13003 13003

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

 0.125. Size:150K  crhj
3dd13003 x1.pdf

13003 13003

NPN R 3DD13003 X1 3DD13003 X1 NPN VCEO 400 V IC 2 A Ptot W TC=25 50

 0.126. Size:148K  crhj
3dd13003u3d.pdf

13003 13003

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

 0.127. Size:153K  crhj
3dd13003 m6d.pdf

13003 13003

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W

 0.128. Size:152K  crhj
3dd13003 e6d.pdf

13003 13003

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

 0.129. Size:151K  crhj
3dd13003j6d.pdf

13003 13003

NPN R 3DD13003 J6D 3DD13003 J6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

 0.130. Size:154K  crhj
3dd13003k8.pdf

13003 13003

NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W

 0.131. Size:317K  crhj
3dd13003h3d.pdf

13003 13003

R NPN 3DD13003H3D1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25

 0.132. Size:151K  crhj
3dd13003u6d.pdf

13003 13003

NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W

 0.133. Size:107K  crhj
3dd13003v6d.pdf

13003 13003

RNPN 3DD13003V6D 1 3DD13003V6D NPN

 0.134. Size:139K  crhj
3dd13003vud.pdf

13003 13003

NPN R 3DD13003 VUD 3DD13003 VUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

 0.135. Size:183K  crhj
3dd13003s1d.pdf

13003 13003

NPN R 3DD13003 S1D 3DD13003 S1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

 0.136. Size:151K  crhj
3dd13003f6d.pdf

13003 13003

NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W

 0.137. Size:136K  crhj
3dd13003 sud.pdf

13003 13003

NPN R 3DD13003 SUD 3DD13003 SUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

 0.138. Size:183K  crhj
3dd13003v1d.pdf

13003 13003

NPN R 3DD13003 V1D 3DD13003 V1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

 0.139. Size:148K  crhj
3dd13003 w3d.pdf

13003 13003

NPN R 3DD13003 W3D 3DD13003 W3D VCEO 200 V NPN IC 2 A Ptot TC=25 35 W

 0.140. Size:153K  crhj
3dd13003 j7d.pdf

13003 13003

NPN R 3DD13003 J7D 3DD13003 J7D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W

 0.141. Size:155K  crhj
3dd13003j8d.pdf

13003 13003

NPN R 3DD13003 J8D 3DD13003 J8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

 0.142. Size:182K  crhj
3dd13003f1d.pdf

13003 13003

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

 0.143. Size:183K  crhj
3dd13003 s1d.pdf

13003 13003

NPN R 3DD13003 S1D 3DD13003 S1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

 0.144. Size:152K  crhj
3dd13003 k6.pdf

13003 13003

NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W

 0.145. Size:153K  crhj
3dd13003 u6d.pdf

13003 13003

NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W

 0.146. Size:151K  crhj
3dd13003m6d.pdf

13003 13003

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

 0.147. Size:153K  crhj
3dd13003 f6d.pdf

13003 13003

NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W

 0.148. Size:150K  crhj
3dd13003k6.pdf

13003 13003

NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W

 0.149. Size:148K  crhj
3dd13003w3d.pdf

13003 13003

NPN R 3DD13003 W3D 3DD13003 W3D VCEO 200 V NPN IC 2 A Ptot TC=25 35 W

 0.150. Size:153K  crhj
3dd13003 h6d.pdf

13003 13003

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

 0.151. Size:153K  crhj
3dd13003h8d.pdf

13003 13003

NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W

 0.152. Size:151K  crhj
3dd13003 d.pdf

13003 13003

NPN R 3DD13003 D 3DD13003 D NPN VCEO 400 V IC 2.5 A Ptot TC=25 50 W

 0.153. Size:150K  crhj
3dd13003x1.pdf

13003 13003

NPN R 3DD13003 X1 3DD13003 X1 NPN VCEO 400 V IC 2 A Ptot W TC=25 50

 0.154. Size:183K  crhj
3dd13003 u1d.pdf

13003 13003

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

 0.155. Size:150K  crhj
3dd13003 f3d.pdf

13003 13003

NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W

 0.156. Size:151K  crhj
3dd13003w6d.pdf

13003 13003

NPN R 3DD13003 W6D 3DD13003 W6D VCEO 200 V NPN IC 2 A Ptot TC=25 40 W

 0.157. Size:153K  crhj
3dd13003 w6d.pdf

13003 13003

NPN R 3DD13003 W6D 3DD13003 W6D VCEO 200 V NPN IC 2 A Ptot TC=25 40 W

 0.158. Size:150K  crhj
3dd13003e6d.pdf

13003 13003

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

 0.159. Size:155K  crhj
3dd13003 m8d.pdf

13003 13003

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

 0.160. Size:180K  crhj
3dd13003 v1d.pdf

13003 13003

NPN R 3DD13003 V1D 3DD13003 V1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

 0.161. Size:182K  crhj
3dd13003 f1d.pdf

13003 13003

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

 0.162. Size:148K  crhj
3dd13003 u3d.pdf

13003 13003

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

 0.163. Size:155K  crhj
3dd13003 j8d.pdf

13003 13003

NPN R 3DD13003 J8D 3DD13003 J8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

 0.164. Size:111K  jdsemi
h13003h.pdf

13003 13003

RH13003H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerComputer aided power and Switch-mode power supplies 222FEATURES

 0.165. Size:118K  jdsemi
s13003dl 2.pdf

13003 13003

RS13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.166. Size:116K  jdsemi
h13003ad 2.pdf

13003 13003

RH13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.167. Size:117K  jdsemi
h13003dl.pdf

13003 13003

RH13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.168. Size:116K  jdsemi
h13003d 2.pdf

13003 13003

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.169. Size:113K  jdsemi
j13003.pdf

13003 13003

RJ13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.170. Size:117K  jdsemi
h13003adl.pdf

13003 13003

RH13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.171. Size:120K  jdsemi
s13003ad 2.pdf

13003 13003

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.172. Size:117K  jdsemi
h13003adl 2.pdf

13003 13003

RH13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.173. Size:116K  jdsemi
s13003ad 3.pdf

13003 13003

RP13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.174. Size:116K  jdsemi
p13003d.pdf

13003 13003

RP13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.175. Size:119K  jdsemi
s13003adl.pdf

13003 13003

RS13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.176. Size:115K  jdsemi
s13003a-d.pdf

13003 13003

RS13003A-D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 2

 0.177. Size:110K  jdsemi
bu13003d.pdf

13003 13003

RBU13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.178. Size:114K  jdsemi
h13003ah.pdf

13003 13003

RH13003AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer aided power and Switch-mode power supplies 222FEATURES 2 H

 0.179. Size:116K  jdsemi
13003b.pdf

13003 13003

R13003B www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F

 0.180. Size:114K  jdsemi
h13003.pdf

13003 13003

RH13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.181. Size:112K  jdsemi
s13003 2.pdf

13003 13003

RS13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.182. Size:120K  jdsemi
s13003ad 4.pdf

13003 13003

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.183. Size:117K  jdsemi
h13003ad.pdf

13003 13003

RH13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.184. Size:120K  jdsemi
bu13003f.pdf

13003 13003

RBU13003F www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.185. Size:118K  jdsemi
s13003dl.pdf

13003 13003

RS13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

 0.186. Size:112K  jdsemi
s13003a 2.pdf

13003 13003

RS13003A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.187. Size:111K  jdsemi
s13003a.pdf

13003 13003

RS13003A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.188. Size:117K  jdsemi
h13003d.pdf

13003 13003

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.189. Size:121K  jdsemi
s13003ad.pdf

13003 13003

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.190. Size:116K  jdsemi
13003ad.pdf

13003 13003

R13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.191. Size:112K  jdsemi
s13003.pdf

13003 13003

RS13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.192. Size:114K  jdsemi
h13003 2.pdf

13003 13003

RH13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

 0.193. Size:116K  jdsemi
s13003ad-h.pdf

13003 13003

RS13003AD-H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Charger and Switch-mode power supplies 222FEATURES 2 High voltage c

 0.194. Size:113K  jdsemi
p13003.pdf

13003 13003

RP13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampCharger and Switch-mode power supplies 222FEATURES 2

 0.195. Size:117K  jdsemi
h13003d 3.pdf

13003 13003

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

 0.196. Size:169K  first silicon
mje13003t.pdf

13003 13003

SEMICONDUCTORMJE13003TTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DFEATURESEAExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A CF GDIM MILLIMETERSHigh Collector Voltage : VCBO=700V.BA 8.3 MAXB 11.30.3C 4.15 TYP1 2 3D 3.20.2E 2.00.2H F 2.80.1IG 3.20.1MAXIMUM RA

 0.197. Size:77K  first silicon
mje13003b.pdf

13003 13003

SEMICONDUCTOR MJE13003BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=0.5S(Max.), tf=0.7S(Max.), at IC=1AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_MA

 0.198. Size:97K  first silicon
mje13003a.pdf

13003 13003

SEMICONDUCTOR MJE13003ATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_

 0.199. Size:299K  first silicon
mje13003d.pdf

13003 13003

SEMICONDUCTORMJE13003DTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.AICJFEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0ADIM MILLIMETERSA 6 50 0 2High Collector Voltage : VCBO=700V.B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATING (Ta=25C)E 2 70 0 2F 2 30 0 1

 0.200. Size:98K  first silicon
mje13003 to126.pdf

13003 13003

SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.TO-126 FEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A1.BASEHigh Collector Voltage : VCBO=700V.2.COLLECTOR 3.EMITTERMAXIMUM RATING (Ta=25C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNITVC

 0.201. Size:205K  first silicon
mje13003i.pdf

13003 13003

SEMICONDUCTORMJE13003ITECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DIM MILLIMETERSA 2.20 0.2B 1.50 0.15FEATURESc 0.5 0.07Excellent Switching TimesD 6.50 0.151 2 3: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0A e 2.30 typL 7.70 0.2High Collector Voltage : VCBO=700V.A1 1.20 0.05b1 0.8 0.1

 0.202. Size:767K  kexin
mjd13003.pdf

13003 13003

SMD Type TransistorsNPN TransistorsMJD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi

 0.203. Size:1159K  kexin
3dd13003.pdf

13003 13003

SMD Type TransistorsNPN Transistors3DD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi

 0.204. Size:1990K  kexin
ksu13003h.pdf

13003 13003

DIP Type TransistorsNPN TransistorsKSU13003HTO-251Unit:mm6.60.22.30.15.350.150.50.05 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=530V High Voltage, High Speed Switching 1 2 30.750.150.80.150.5+0.10.60.1 -0.052.3typ1.20.32.3typ1. Base2. Collector3. Emitter Absolute Maximum Ratings Ta =

 0.205. Size:312K  kexin
njm13003-1.63.pdf

13003

DIP Type TransistorsNPN TransistorsNJM13003-1.63TO-126Unit:mm8.00 0.30 3.25 0.20 Features High voltage capability3.20 0.10 High speed switching Wide SOA(1.00) (0.50)0.75 0.10 ROHS compliant1.75 0.201.60 0.100.75 0.10#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitter Absol

 0.206. Size:256K  winsemi
wbd13003d.pdf

13003 13003

WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

 0.207. Size:147K  winsemi
sbn13003hb.pdf

13003 13003

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 0.208. Size:336K  winsemi
wbr13003b2.pdf

13003 13003

WBR13003B2WBR13003B2WBR13003B2WBR13003B2High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Par

 0.209. Size:344K  winsemi
wbr13003d.pdf

13003 13003

WBR13003DWBR13003DWBR13003DWBR13003DHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speedswitc

 0.210. Size:395K  winsemi
wbp13003d.pdf

13003 13003

WBP13003DWBP13003DWBP13003DWBP13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

 0.211. Size:445K  winsemi
sbp13003h.pdf

13003 13003

SBP13003HSBP13003HSBP13003HSBP13003HHigh Voltage Fast -Switching NPN Power TransistorFeaturesVery High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter

 0.212. Size:406K  winsemi
sbr13003b.pdf

13003 13003

SBR13003BSBR13003BSBR13003BSBR13003BHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Paramet

 0.213. Size:308K  winsemi
wbn13003b2d.pdf

13003 13003

WBN13003B2DWBN13003B2DWBN13003B2DWBN13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

 0.214. Size:313K  winsemi
wbr13003b3.pdf

13003 13003

WBR13003B3WBR13003B3WBR13003B3WBR13003B3High Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for

 0.215. Size:269K  winsemi
wbr13003d1.pdf

13003 13003

WBR13003D1WBR13003D1WBR13003D1WBR13003D1High Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speeds

 0.216. Size:329K  winsemi
wbr13003.pdf

13003 13003

WBR13003WBR13003WBR13003WBR13003High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Parameter T

 0.217. Size:281K  winsemi
sbr13003bd.pdf

13003 13003

SBR13003BDSBR13003BDSBR13003BDSBR13003BDHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability1.Base Wide Reverse Bias SOA3.EmitterGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switchin

 0.218. Size:364K  winsemi
sbp13003o.pdf

13003 13003

SBP13003-OSBP13003-OSBP13003-OSBP13003-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

 0.219. Size:355K  winsemi
wbr13003ld.pdf

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WBR13003LDWBR13003LDWBR13003LDWBR13003LDHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability High Voltage Capability Wide Soa Bu

 0.220. Size:273K  winsemi
sbn13003a.pdf

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SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 0.221. Size:268K  winsemi
wbn13003b.pdf

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WBN13003BWBN13003BWBN13003BWBN13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter Tes

 0.222. Size:406K  winsemi
sbn13003a1.pdf

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SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 0.223. Size:560K  winsemi
sbp13003d.pdf

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SBP13003DSBP13003DSBP13003DSBP13003DHigh Voltage Fast -Switching NPN Power TransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics requir

 0.224. Size:317K  winsemi
wbr13003b2d.pdf

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WBR13003B2DWBR13003B2DWBR13003B2DWBR13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

 0.225. Size:350K  winsemi
wbr13003x.pdf

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WBR13003XWBR13003XWBR13003XWBR13003XHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionGener

 0.226. Size:316K  winsemi
wbr13003b.pdf

13003 13003

WBR13003BWBR13003BWBR13003BWBR13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switchingmode power supply.Absolute Maximum RatingsSymbol Parameter Tes

 0.227. Size:344K  winsemi
wbr13003l2.pdf

13003 13003

WBR13003L2WBR13003L2WBR13003L2WBR13003L2High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheel

 0.228. Size:354K  winsemi
sbr13003d.pdf

13003 13003

SBR13003DSBR13003DSBR13003DSBR13003DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling

 0.229. Size:202K  winsemi
sbr13003h.pdf

13003 13003

SBR13003HHigh Voltage FastSwitching NPNPower Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value U

 0.230. Size:327K  winsemi
sbr13003b1.pdf

13003 13003

SBR13003B1SBR13003B1SBR13003B1SBR13003B1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

 0.231. Size:468K  winsemi
wbn13003a1.pdf

13003 13003

WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 0.232. Size:162K  winsemi
sbu13003bd.pdf

13003 13003

SBU13003BDHigh Voltage Fast-Switching NPN Power TransistorFeatures symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Rat

 0.233. Size:398K  bcdsemi
apt13003hu-hz.pdf

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Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003HGeneral Description FeaturesThe APT13003H series are high voltage, high speed High Switching Speed switching NPN power transistors specially designed High Collector-emitter Voltagefor off-line switch mode power supplies with low out- Low Costput power. ApplicationsThe APT13003H series are available

 0.234. Size:427K  bcdsemi
apt13003eu-ez.pdf

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Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003EGeneral Description FeaturesThe APT13003E series are high voltage, high speed High Switching Speed switching NPN Power transistors specially designed High Collector-Emitter Voltagefor off-line switch mode power supplies with low out- Low Costput power. Bulk and Ammo Packing TO-92 Package andTO-12

 0.235. Size:411K  bcdsemi
apt13003su-sz.pdf

13003 13003

Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003SGeneral Description FeaturesThe APT13003S series are high voltage, high speed High Switching Speed switching transistors specially designed for off-line High Collector-Emitter Voltageswitch mode power supplies with low output power. Low Cost Bulk and Ammo Packing TO-92 Package andThe APT13003S seri

 0.236. Size:330K  bcdsemi
apt13003lz.pdf

13003 13003

Data SheetHIGH VOLTAGE NPN TRANSISTOR APT13003LGeneral Description FeaturesThe APT13003L series are high voltage, high speed High Switching Speedswitching NPN power transistor specially designed for High Collector-Emitter Voltageoff-line switch mode power supplies with low output Low Costpower. ApplicationsThe APT13003L series is available in TO-92 package. Batt

 0.237. Size:413K  bcdsemi
apt13003di-du-dz.pdf

13003 13003

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003DGeneral Description FeaturesThe APT13003D is a high voltage, high speed, high High Switching Speedefficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficiencyThe APT13003D

 0.238. Size:349K  chenmko
3n13003gp.pdf

13003 13003

CHENMKO ENTERPRISE CO.,LTD3N SMALL FLAT NPN Epitaxial Transistor VOLTAGE 0 Volts CURRENT AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* PC= 1.5 W (mounted on ceramic substrate).* High saturation current capability..114(2.90).307(7.80).059(1.50).098(2.50).291(7.40)CONSTRUCTION .043(1.10).161(4.1

 0.239. Size:391K  feihonltd
e13003da.pdf

13003 13003

TRANSISTOR E13003DA MAIN CHARACTERISTICS FEATURES IC 1.5A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 1.5W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballasts

 0.240. Size:257K  foshan
mje13003n5.pdf

13003 13003

MJE13003N5(3DD13003N5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.241. Size:230K  foshan
mje13003vk3.pdf

13003 13003

MJE13003VK3(3DD13003VK3) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

 0.242. Size:277K  foshan
mje13003l1.pdf

13003 13003

MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 0.243. Size:237K  foshan
mje13003vg1.pdf

13003 13003

MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

 0.244. Size:261K  foshan
mje13003dn5.pdf

13003 13003

MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.245. Size:274K  foshan
mje13003j1g.pdf

13003 13003

MJE13003J1G(3DD13003J1G) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 0.246. Size:207K  foshan
mje13003k4.pdf

13003 13003

MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.247. Size:195K  foshan
mje13003h1.pdf

13003 13003

MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO

 0.248. Size:238K  foshan
mje13003dk1.pdf

13003 13003

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.249. Size:290K  foshan
mje13003e1.pdf

13003 13003

MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.250. Size:191K  foshan
mje13003h6.pdf

13003 13003

MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.251. Size:192K  foshan
mje13003f1.pdf

13003 13003

MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.252. Size:215K  foshan
mje13003i7.pdf

13003 13003

MJE13003I7(3DD13003I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.253. Size:346K  foshan
mje13003di5.pdf

13003 13003

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

 0.254. Size:207K  foshan
mje13003i6.pdf

13003 13003

MJE13003I6(3DD13003I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.255. Size:291K  foshan
mje13003di1.pdf

13003 13003

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.256. Size:212K  foshan
mje13003g1.pdf

13003 13003

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.257. Size:189K  foshan
mje13003h5.pdf

13003 13003

MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.258. Size:243K  foshan
mje13003hn6.pdf

13003 13003

MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP

 0.259. Size:206K  foshan
mje13003k3.pdf

13003 13003

MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.260. Size:238K  foshan
mje13003dk3.pdf

13003 13003

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.261. Size:384K  foshan
mje13003vn5.pdf

13003 13003

MJE13003VN5(3DD13003VN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 0.262. Size:204K  foshan
mje13003k7.pdf

13003 13003

MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.263. Size:412K  foshan
mje13003dg1.pdf

13003 13003

MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.264. Size:284K  foshan
mje13003hk5.pdf

13003 13003

MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 0.265. Size:219K  foshan
mje13003g5.pdf

13003 13003

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.266. Size:246K  foshan
mje13003dk5.pdf

13003 13003

MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.267. Size:428K  foshan
mje13003dg5.pdf

13003 13003

MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700

 0.268. Size:197K  foshan
mje13003k5.pdf

13003 13003

MJE13003K5(3DD13003K5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.269. Size:258K  foshan
mje13003vf1.pdf

13003 13003

MJE13003VF1(3DD13003VF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 0.270. Size:197K  foshan
mje13003m7.pdf

13003 13003

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.271. Size:200K  foshan
mje13003i1.pdf

13003 13003

MJE13003I1(3DD13003I1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.272. Size:193K  foshan
mje13003f2.pdf

13003 13003

MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.273. Size:250K  foshan
mje13003f5.pdf

13003 13003

MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.274. Size:190K  foshan
mje13003vi5.pdf

13003 13003

MJE13003VI53DD13003VI5 NPN /SILICON NPN TRANSISTOR Purpose:High voltage capability,high speed switching,wide SOA. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. /Absolute maximum ratings(Tc=25

 0.275. Size:273K  foshan
mje13003j1.pdf

13003 13003

MJE13003J1(3DD13003J1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 0.276. Size:199K  foshan
mje13003k6.pdf

13003 13003

MJE13003K6(3DD13003K6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.277. Size:200K  foshan
mje13003f6.pdf

13003 13003

MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.278. Size:191K  foshan
mje13003h3.pdf

13003 13003

MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.279. Size:309K  foshan
mje13003lf5.pdf

13003 13003

MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 0.280. Size:191K  foshan
mje13003m8.pdf

13003 13003

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.281. Size:283K  foshan
mje13003l5.pdf

13003 13003

MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 0.282. Size:187K  foshan
mje13003m5.pdf

13003 13003

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO

 0.283. Size:258K  foshan
mje13003n8.pdf

13003 13003

MJE13003N8(3DD13003N8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.284. Size:218K  foshan
mje13003vi1.pdf

13003 13003

MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features: High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(

 0.285. Size:189K  foshan
mje13003m6.pdf

13003 13003

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.286. Size:251K  foshan
mje13003lf1.pdf

13003 13003

MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 0.287. Size:203K  foshan
mje13003vh5.pdf

13003 13003

MJE13003VH53DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

 0.288. Size:202K  foshan
mje13003k8.pdf

13003 13003

MJE13003K8(3DD13003K8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.289. Size:302K  foshan
mje13003di3.pdf

13003 13003

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

 0.290. Size:216K  foshan
mje13003ft.pdf

13003 13003

MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.291. Size:389K  foshan
mje13003vn7.pdf

13003 13003

MJE13003VN7(3DD13003VN7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

 0.292. Size:286K  foshan
mje13003l3.pdf

13003 13003

MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 0.293. Size:219K  foshan
mje13003g6.pdf

13003 13003

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.294. Size:284K  foshan
mje13003l6.pdf

13003 13003

MJE13003L6(3DD13003L6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

 0.295. Size:196K  foshan
mje13003vh1.pdf

13003 13003

MJE13003VH13DD13003VH1 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

 0.296. Size:194K  foshan
mje13003m3.pdf

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MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.297. Size:244K  foshan
mje13003dk7.pdf

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MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

 0.298. Size:244K  foshan
mje13003vg5.pdf

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MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

 0.299. Size:182K  foshan
mje13003m1.pdf

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MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

 0.300. Size:232K  foshan
mje13003vk5.pdf

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MJE13003VK5(3DD13003VK5) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

 0.301. Size:986K  semihow
ksb13003c.pdf

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KSB13003C SEMIHOW REV.A0, January 2012 KSB13003CKSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E

 0.302. Size:611K  semihow
ksu13003er.pdf

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KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M

 0.303. Size:366K  semihow
ksh13003a.pdf

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KSH13003AKSH13003A SEMIHOW REV.A1,Jan 2008KSH130003AKSH13003AHigh Voltage Switch Mode Applicationsgg pp High Speed Switching Suitable for Switching Regulator and Motor Control1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted30 WattsTO-220CHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorCollector-Bas

 0.304. Size:459K  semihow
ksc13003h.pdf

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KSC13003H SEMIHOW REV.A1,Oct 2007 KSC13003HKSC13003H Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 20 Watts TO-126 CHARACTERISTICS SYMBOL RATING UNIT 1. Base

 0.305. Size:528K  semihow
ksb13003ar.pdf

13003 13003

KSB13003ARKSB13003AR SEMIHOW REV.A2,Oct 2007KSB130003ARKSB13003ARHigh Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless

 0.306. Size:588K  semihow
ksg13003ar.pdf

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KSG13003AR SEMIHOW REV.A0,Mar 2009KSG13003ARKSG13003ARSwitch Mode series NPN silicon Power Transistor High voltage, high speed power switching1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.5 WattsTO-92LCHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collector3. BaseCollector-Base Voltage VCBO 700 VCollector

 0.307. Size:611K  semihow
ksd13003e.pdf

13003 13003

KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum

 0.308. Size:917K  semihow
ksb13003h.pdf

13003 13003

KSB13003H SEMIHOW REV.A0,Oct 2007 KSB13003HKSB13003H High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitte

 0.309. Size:611K  semihow
ksd13003er.pdf

13003 13003

KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M

 0.310. Size:211K  semihow
ksc13003a.pdf

13003 13003

KSC13003AKSC13003A SEMIHOW REV.A1,Oct 2007KSC130003AKSC13003ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted20 WattsTO-1

 0.311. Size:494K  semihow
ksb13003a.pdf

13003 13003

KSB13003AKSB13003A SEMIHOW REV.A1,Oct 2007KSB130003AKSB13003AHigh Voltage Switch Mode Applicationgg pp High Speed Switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector3. EmitterCollector-B

 0.312. Size:611K  semihow
ksu13003e.pdf

13003 13003

KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum

 0.313. Size:443K  semihow
ksb13003hr.pdf

13003 13003

KSB13003HRKSB13003HR SEMIHOW REV.A0,Oct 2007KSB130003HRKSB13003HRHigh Voltage Switch Mode Applicationgg pp High voltage, High speed power switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collect

 0.314. Size:323K  semihow
ksb13003er.pdf

13003 13003

KSB13003ERKSB13003ER SEMIHOW REV.A0,Apr 2008KSB130003ERKSB13003ERHigh Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute M

 0.315. Size:985K  semihow
ksb13003cr.pdf

13003 13003

KSB13003CR SEMIHOW REV.A0, January 2012 KSB13003CRKSB13003CR High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector

 0.316. Size:828K  semihow
ksu13003hr.pdf

13003 13003

KSU13003HR SEMIHOW REV.A0,July 2011 KSU13003HRKSU13003HR Switch Mode series NPN silicon Power Transistor High Voltage, High Speed Switching Suitable for switching regulator, inverters motor controls 2 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 25 Watts TO-251 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter

 0.317. Size:460K  semiwell
sbr13003a.pdf

13003 13003

SBR13003ASemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-126This devices is designed for high voltage, high speed s

 0.318. Size:160K  semiwell
sbp13003.pdf

13003 13003

SBP13003SemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector- Very High Switching Speed - Minimum Lot-to-Lot hFE Variation1.Base - Short storge time- Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-220This devices is designed for high voltage, high speed switchingcharacteristic,especially suitable for ba

 0.319. Size:2205K  slkor
sl13003.pdf

13003 13003

SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

 0.320. Size:2205K  slkor
sl13003a1 sl13003a2 sl13003b1 sl13003b2.pdf

13003 13003

SL13003TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power switching applications TO-126 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1 . BASE PC Collector Power Dissipation 1.25

 0.321. Size:104K  sunroc
alj13003.pdf

13003

SUNROCALJ13003 TRANSISTOR(NPN)FEATURESpower switching applicationsMAXIMUM RATINGS(Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current-Continuous 1.2 APC Collector Power Dissipation 25 WTJ Junction Temperature 150 Tstg Storage Temperature -55

 0.322. Size:596K  taitron
tsl13003.pdf

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Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T =25C unless note

 0.323. Size:168K  wuxi china
3dd13003m8d.pdf

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NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot TC=25 60 W

 0.324. Size:151K  wuxi china
3dd13003h6d.pdf

13003 13003

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

 0.325. Size:150K  wuxi china
3dd13003f6.pdf

13003 13003

NPN R 3DD13003 F6 3DD13003 F6 NPN VCEO 400 V IC 1.5 A Ptot Tc=25 50 W

 0.326. Size:195K  wuxi china
3dd13003f1d.pdf

13003 13003

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

 0.327. Size:183K  wuxi china
3dd13003e1d.pdf

13003 13003

NPN R 3DD13003 E1D 3DD13003 E1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W

 0.328. Size:150K  wuxi china
3dd13003e6d.pdf

13003 13003

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

 0.329. Size:262K  haolin elec
ht13003.pdf

13003 13003

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors HT13003 (AFO) TRANSISTOR (NPN) TO-126C FEATURES 1.BASE power switching applications 2.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 480 V VEBO Emitter-B

 0.330. Size:142K  haolin elec
hr13003.pdf

13003 13003

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 HR13003 TRANSISTOR (NPN) FEATURES High total power disspation. (pc=1.25w) MARKING:MJE13003 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER 1 2 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 4

 0.331. Size:5465K  cn mot
mot13003c mot13003d.pdf

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MOTMOT13003C/MOT13003DNPN SILICON TRANSISTORSymbol PRODUCT CHARACTERISTICSBVCBO700VBVCEO400V10-40HFE@5V1AIC 1.5A FEATURES* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100C Typical tc = 290ns @ 1A, 100C. * 700V blocking capability APPLICATIONS* Switching regulators, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuit

 0.332. Size:262K  cn ween semi
phe13003a.pdf

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PHE13003ANPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic li

 0.333. Size:264K  cn ween semi
phe13003c.pdf

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PHE13003CNPN power transistor13 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses3. Applications Compac

 0.334. Size:202K  cn ween semi
phd13003c.pdf

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IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where

 0.335. Size:806K  cn shunye
gt13003y.pdf

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GT13003YHigh Voltage And High Speed Switching TransistorsTO-252 0.094(2.38)0.264(6.70)Features0.087(2.20)0.256(6.50)0.022(0.56)0.215(5.46)0.018(0.46)0.202(5.13)2=1.65A=800V 0.055(1.40)0.031(0.80) 0.244(6.20)0.236(6.00)0.051(1.30)0.409(10.40)0.004(0.10)0.043(1.10)0.386( 9.80)MAX.1 2 30.114(2.90)0.067(1.70)REF.0.055(1.40)0.032(0.81)0.022(0

 0.336. Size:235K  inchange semiconductor
mjd13003.pdf

13003 13003

isc Silicon NPN Power Transistor MJD13003DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are particularly suited for115 and 220V switchmode applications such as switchingregulato

 0.337. Size:213K  inchange semiconductor
mje13003a.pdf

13003 13003

isc Silicon NPN Power Transistor MJE13003ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

 0.338. Size:128K  inchange semiconductor
mje13003d.pdf

13003 13003

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 7

 0.339. Size:169K  inchange semiconductor
mje13003.pdf

13003 13003

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;c

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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