All Transistors. 13003 Datasheet

 

13003 Datasheet, Equivalent, Cross Reference Search

Type Designator: 13003

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.25 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO126

13003 Transistor Equivalent Substitute - Cross-Reference Search

 

13003 Datasheet (PDF)

..1. mje13002 13003.pdf Size:248K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002MJE13003TO-126 Plastic PackageSuitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers andDeflection CircuitsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MJE13002 MJE13003 UNITVCEO(sus)Collector Emitter Voltage 300

0.1. xw6821 xw6822 xw6822a xw6823 xw6823a xw13001 sxw13001 xw13002 sxw13002 xw13003 sxw13003 sxw13005 sxw13007 sxw13009.pdf Size:222K _1

13003

0.2. phe13003au 1.pdf Size:50K _philips

13003
13003

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

 0.3. phe13003a.pdf Size:148K _philips

13003
13003

PHE13003ANPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

0.4. phd13003c.pdf Size:136K _philips

13003
13003

PHD13003CNPN power transistor with integrated diodeRev. 01 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package1.2 Features and benefits Fast switching High voltage capability High typical DC current

 0.5. phe13003c.pdf Size:254K _philips

13003
13003

PHE13003CNPN power transistorRev. 1 29 July 2010 Preliminary data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V High typical DC current gain1.3 Applications Compact fluorescent l

0.6. st13003-k.pdf Size:218K _st

13003
13003

ST13003-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplications12 Electronic ballast for fluorescent lighting (CFL)3 SMPS for battery chargerSOT-32DescriptionThe device is manufactured using high voltage Figure 1. Internal schematic diagrammulti-epitaxi

0.7. std13003.pdf Size:266K _st

13003
13003

STD13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR REVERSE PINS OUT Vs STANDARD IPAK(TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED11 SURFACE-MOUNTING DPAK (TO-252)233POWER PACKAGE IN TAPE & REEL (Suffix"T4") THROUGH-HOLE IPAK (TO-2

0.8. st13003n.pdf Size:203K _st

13003
13003

ST13003NHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Very high switching speedApplication32 Compact fluorescent lamps (CFLs)1SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a

0.9. stx13003.pdf Size:329K _st

13003
13003

STX13003High voltage fast-switching NPN power transistorFeatures High voltage capability Very high switching speedApplications Compact fluorescent lamps (CFLs) SMPS for battery chargerDescriptionTO-92 TO-92APThe device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure

0.10. st13003dn.pdf Size:163K _st

13003
13003

ST13003DNHigh voltage fast-switching NPN power transistorPreliminary dataFeatures High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode3Application 21 Compact fluorescent lamps (CFLs)SOT-32DescriptionThe device is manufactured using high voltage multi epitaxial planar technology for high swi

0.11. stk13003.pdf Size:217K _st

13003
13003

STK13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STK13003 IS REVERSE PINS OUT VsSTANDARD SOT-82 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIESSOT-82DESCRIPTION The device is

0.12. st13003d-k.pdf Size:141K _st

13003
13003

ST13003D-KHigh voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode123ApplicationsSOT-32 Electronic ballast for fluorescent lightingDescriptionFigure 1. Internal schemati

0.13. st13003.pdf Size:80K _st

13003
13003

ST13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS: ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING12 SWITCH MODE POWER SUPPLIES3DESCRIPTIONSOT-32The device is manufactured using high voltageMulti Epitaxial Planar te

0.14. stx13003 2.pdf Size:243K _st

13003
13003

STX13003High voltage fast-switching NPN power transistorFeatures High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speedApplications Compact fluorescent lamps (CFLs)TO-92 TO-92AP SMPS for battery chargerDescriptionFigure 1. Internal schematic diagramThe device is manufactured

0.15. ttc13003l.pdf Size:175K _toshiba

13003
13003

TTC13003LBipolar Transistors Silicon NPN Triple-Diffused TypeTTC13003LTTC13003LTTC13003LTTC13003L1. Applications1. Applications1. Applications1. Applications High-Speed Switching for Inverter Lighting Equipment2. Features2. Features2. Features2. Features(1) Suitable for RCC circuits.(guaranteed small current hFE):hFE = 10(min)(IC = 1 mA)(2) High speed: tf =

0.16. fjn13003.pdf Size:49K _fairchild_semi

13003
13003

FJN13003High Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21WTO-9211. Emitter 2. Collector 3.BaseNPN Silicon Transistor Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Volta

0.17. kse13003.pdf Size:465K _fairchild_semi

13003
13003

March 2008KSE13003NPN Silicon TransistorHigh Voltage Switch Mode Applications High Voltage Capability High Speed Switching Suitable for Switching Regulator and Motor ControlTO-12611. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings* TC = 25C unless otherwise noted (notes_1)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter

0.18. kse13003t.pdf Size:47K _fairchild_semi

13003
13003

KSE13003THigh Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC C

0.19. ksh13003.pdf Size:23K _samsung

13003
13003

KSH13003 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORD-PAKD-PACK FOR SURFACE MOUNT APPLICATIONS High speed Switching Suitable for Switching Regulator Motor Control Straight Lead(I.PACK, I Suffix)1 Lead Formed for Surface Mount Applications(No Suffix)1. Base 2. Collector 3. EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitI-PAK

0.20. kse13003t.pdf Size:21K _samsung

13003
13003

KSE13003 NPN SILICON TRANSISTORHIGH VOLTAGE SWITCH MODE APPLICATIONSTO-126 High Speed Switching Suitable for Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) IC 3

0.21. dxt13003dk.pdf Size:299K _diodes

13003
13003

DXT13003DK450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 450V Case: TO252 (DPAK) BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Integrated Anti-Parall

0.22. dxt13003dg.pdf Size:367K _diodes

13003
13003

DXT13003DG450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 450V Case: SOT223 BVCES > 700V Case Material: Molded Plastic. Green Molding Compound BVEBO > 9V UL Flammability Rating 94V-0 IC = 1.5A high Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 Integrated Collector-Emitter Diode to act

0.23. dxt13003ek.pdf Size:312K _diodes

13003
13003

DXT13003EK460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data BVCEO > 460V Case: TO252 (DPAK) BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound BVEBO > 9V UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 IC = 1.5A high Continuous Collector Current Terminals: Finish - Ma

0.24. mje13003g.pdf Size:107K _onsemi

13003
13003

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

0.25. mje13003.pdf Size:107K _onsemi

13003
13003

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

0.26. 13003de.pdf Size:159K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable

0.27. mje13003d-p.pdf Size:126K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters W

0.28. mje13003k.pdf Size:308K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. FEATURES * Reverse biased SOA with inductive load @ Tc=100C * Inductive switching ma

0.29. mje13003-p.pdf Size:358K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100C *

0.30. 13003dh.pdf Size:166K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

0.31. 13003dw.pdf Size:166K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage and high reliability, etc. The UTC 13003DW is suitable for electronic

0.32. mje13003.pdf Size:399K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ TC=100C * Indu

0.33. mje13003-e.pdf Size:274K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorco

0.34. 13003df.pdf Size:158K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

0.35. 13003eda.pdf Size:140K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD 13003EDA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003EDA is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1

0.36. mje13003d.pdf Size:204K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread

0.37. 13003bs.pdf Size:165K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

0.38. 13003ada.pdf Size:136K _utc

13003
13003

UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 1

0.39. std13003d.pdf Size:317K _auk

13003
13003

STD13003DNPN Silicon Power TransistorApplications PIN Connection Power amplifier application High current switching application Features High speed switching VCEO(sus)=400V Suitable for Switching Regulator and Motor Control TO-252 Ordering Information Type NO. Marking Package Code STD13003D STD13003 TO-252Absolute Maximum Ratings (Ta=25)

0.40. std13003q.pdf Size:288K _auk

13003
13003

STD13003QNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code E C B ESTD13003Q STD13003 TO-92Absolute Maximum Ratings (Ta=25) Characteristic Symbol Ratings UnitCollector-base

0.41. std13003l.pdf Size:278K _auk

13003
13003

STD13003LNPN Silicon Power TransistorSWITCHING REGULATOR APPLICATIONS Features PIN Connection High speed switching C VCEO(sus)=400V Suitable for Switching Regulator and Motor Control BOrdering Information Type NO. Marking Package Code E C B ESTD13003L STD13003 TO-92LAbsolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating UnitCollector-base

0.42. pzt13003.pdf Size:421K _secos

13003
13003

PZT13003 1.5A , 700V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-223FEATURES For AF driver and output stages Power switching applications A M4CLASSIFICATION OF hFE Top ViewC BProduct-Rank PZT13003-A PZT13003-B PZT13003-C123Range 8~20 15~30 25~40K LE

0.43. czd13003.pdf Size:71K _secos

13003

CZD13003 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252 FEATURES Power Switching Applications PACKAGE INFORMATION Package MPQ Leader Size ACBDTO-252 2.5K 13 inch G EK H FNOPM J Collector 2 Millimeter Millimeter REF. REF. Min. Max. Min. Ma

0.44. bd13003b.pdf Size:765K _secos

13003
13003

BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 ABRange 2-2.5 (s) 2.5-3 (s) EFProduct-Rank BD13003B-B1 BD13003B-B2 CNHRange 3-3.5 (s) 3.5

0.45. 3dd13003b.pdf Size:2520K _secos

13003
13003

3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADMillimeter REF. Min. Max. BA 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E CF 0.36 0.51 FG 1.27 TYP. H 1.10 - J 2

0.46. ts13003hv a07.pdf Size:276K _taiwansemi

13003
13003

TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

0.47. ts13003 d07.pdf Size:333K _taiwansemi

13003
13003

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto

0.48. ts13003mv.pdf Size:441K _taiwansemi

13003
13003

TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

0.49. ts13003ck-ct.pdf Size:164K _taiwansemi

13003
13003

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1.5A VCE(SAT) 1V @ IC =0.5A, IB =0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

0.50. ts13003hv.pdf Size:192K _taiwansemi

13003
13003

TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

0.51. ts13003bct.pdf Size:399K _taiwansemi

13003
13003

TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

0.52. ts13003b c07.pdf Size:399K _taiwansemi

13003
13003

TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

0.53. cr13003.pdf Size:83K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CR13003TO126 Plastic PackageECBSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 700 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO 9.0 V

0.54. c13003.pdf Size:214K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyC13003NPN SILICON POWER TRANSISTORTO126 Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 600VCollector -Emitter ( sus) Voltage

0.55. mjd13003.pdf Size:591K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLASTIC POWER TRANSISTOR MJD13003DPAK (TO-252)Plastic PackageDesigned for High Voltage, High Speed Power Switching Inductive Circuits ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 400 VCollector Emitter Voltage VCEV 700 VEmit

0.56. csl13003.pdf Size:110K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL, HIGH SPEED, CSL13003 HIGH VOLTAGE SWITCHING TRANSISTORTO-92Plastic PackageBCEApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollecto

0.57. cdt13003.pdf Size:172K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CDT13003 TO-220Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO

0.58. cd13003.pdf Size:289K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003TO126 Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 600 VVCEOCollector Emitter (sus) Voltage 400 VEmitter Base Voltage VEBO 9

0.59. cd13003d.pdf Size:288K _cdil

13003
13003

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTOR CD13003DTO126 Plastic PackageWith Built - in Integrated Diode between Emitter & CollectorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Base Voltage VCBO 600 VCollector Emitter (sus) Voltage VCEO 400 VEmitter Base Voltage VEBO 9.0 VCollector

0.60. mje13003hv.pdf Size:41K _kec

13003
13003

SEMICONDUCTOR MJE13003HVTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.AHIGH VOLTAGE AND HIGH SPEED BDCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1AHHigh Collector Voltage : VCBO=900V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3

0.61. mje13003.pdf Size:53K _kec

13003
13003

SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.ABHIGH VOLTAGE AND HIGH SPEED DCSWITCHING APPLICATION.EFFEATURESExcellent Switching TimesG: ton=1.1 S(Max.), at IC=1AS(Max.), tf=0.7HHigh Collector Voltage : VCBO=700V.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 1

0.62. 13003-a-b-c-d-e-f.pdf Size:1045K _microelectronics

13003
13003

13003HIGH VOLTAGE POWER TRANSISTORFEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES(Tj=25 Unless OtherWise Stated ) Parameter Symbol Value UnitCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 9 VCollector Curr

0.63. 3dd13003 to-220-3l.pdf Size:246K _lge

13003
13003

3DD13003(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 VVCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuou

0.64. 3dd13003 to-126.pdf Size:205K _lge

13003
13003

3DD13003(NPN) TO-126 TransistorTO-1261.BASE 2.COLLECTOR 3.EMITTER 3 2 1Features power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.5007.4002.9001.1007.800Symbol Parameter Value Units1.500VCBO Collector-Base Voltage 700 V 3.9003.0004.100VCEO Collector-Emitter Voltage 400 V 3.20010.6000.000VEBO Emitter-Base V

0.65. 3dd13003b.pdf Size:183K _lge

13003
13003

3DD13003B(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. COLLECTOR 5.21 3. BASE 4.322.92 5.33MINFeatures power switching applications 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.19Symbol Parameter Value Units2.671.14VCBO Collector-Base Voltage 700 V 1.402.032.67VCEO Collector-Emitter Voltage 400 V

0.66. mje13003b.pdf Size:178K _wietron

13003
13003

WEITRONMJE13003BHigh Voltage Fast-switchingCOLLECTOR2.NPN Power TransistorP b Lead(Pb)-Free1. EMITTER3.2. COLLECTORBASE3. BASEDESCRIPTION:1.The device is manufactured using high voltageEMITTERTO-92Multi Epitaxial Planar technology for high switchingspeeds and medium voltage capability.It uses a Cellular Emitter structure with planar edgetermination to enh

0.67. 3dd13003b.pdf Size:140K _wietron

13003
13003

WEITRON3DD13003BNPN Plastic-Encapsulate TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASEFEATURES : power switching applicationsTO-92MAXIMUM RATINGS (T unless otherwise noted)A=25CParameter Symbol Value UnitsCollector-Base Voltage VVCBO 700Collector-Emitter Voltage VVCEO 400Emitter-Base Voltage 9 VVEBOACollector Current -Continuous IC 1.5Col

0.68. hi13003.pdf Size:50K _hsmc

13003
13003

Spec. No. : HE9034HI-SINCERITYIssued Date : 1999.03.17Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HI13003NPN EPITAXIAL PLANAR TRANSISTORDescriptionThese devices are designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switchmode applications such as Switching Regul

0.69. hmje13003.pdf Size:140K _hsmc

13003
13003

Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-126 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T

0.70. hmje13003e.pdf Size:83K _hsmc

13003
13003

Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-220 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (

0.71. hmje13003d.pdf Size:51K _hsmc

13003
13003

Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings

0.72. mje13003br.pdf Size:385K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE /MJE SERIES TRANSISTORS MJE13003BRNPN MJE

0.73. mje13003brh.pdf Size:385K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H)NPN MJ

0.74. mje13003 2.pdf Size:233K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

0.75. mje13003d 1.pdf Size:232K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

0.76. mje13003b.pdf Size:206K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE /MJE SERIES TRANSISTORS MJE13003BNPN MJE

0.77. mje13003ht.pdf Size:550K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

0.78. mje13003.pdf Size:430K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE /MJE SERIES TRANSISTORS MJE13003NPN MJE

0.79. mje13003d.pdf Size:477K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D / D SERIES TRANSISTORS MJE13003DNPN D / D SERIES TRANSISTORS MJE13003DNPN D

0.80. mje13003ht 1.pdf Size:212K _sisemi

13003
13003

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJE NPN / MJE NPN SERIES TRANSISTORS MJE13003HTMJ

0.81. btn13003t3.pdf Size:256K _cystek

13003
13003

Spec. No. : C827T3 Issued Date : 2012.04.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003T3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003T3 TO-126 BBase CCollector EEmitter B C E Absol

0.82. btn13003d3.pdf Size:250K _cystek

13003
13003

Spec. No. : C827D3 Issued Date : 2012.04.09 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003D3Features High breakdown voltage, V =450V (min.) CEO High collector current, I =1.5A (DC) C(max) Pb-free package Symbol Outline BTN13003D3 TO-126ML BBase CCollector EEmitter E C B Abs

0.83. cs13003 to-92.pdf Size:223K _can-sheng

13003
13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate T

0.84. cs13003 1.2a to-251.pdf Size:177K _can-sheng

13003
13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsula

0.85. cs13003 to-92 1.2a.pdf Size:177K _can-sheng

13003
13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate TransistorsTO-92 Plastic-Encapsulate T

0.86. cs13003 1.5a 1.25w to-126.pdf Size:179K _can-sheng

13003
13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

0.87. cs13003 1a 1w to-126.pdf Size:176K _can-sheng

13003
13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsulate TransistorsTO-126 Plastic-Encapsula

0.88. cs13003 1a 0.9w to-251.pdf Size:180K _can-sheng

13003
13003

ShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,LtdShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.comShenZhen CanSheng Industry Development Co.,Ltd.TO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsulate TransistorsTO-251 Plastic-Encapsula

0.89. mje13003vk1.pdf Size:418K _blue-rocket-elect

13003
13003

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

0.90. r13003f1.pdf Size:407K _blue-rocket-elect

13003
13003

R13003F1(BR3DA13003F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequency

0.91. mje13003i5.pdf Size:830K _blue-rocket-elect

13003
13003

MJE13003I5(BR3DD13003I5Q) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126(R) NPN Silicon NPN transistor in a TO-126(R) Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High

0.92. mje13003vk7.pdf Size:446K _blue-rocket-elect

13003
13003

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

0.93. br3dd13003vk1k.pdf Size:418K _blue-rocket-elect

13003
13003

MJE13003VK1(BR3DD13003VK1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications 110V Suitable for 110V circuit mode, fluore

0.94. br3dd13003vk7r.pdf Size:446K _blue-rocket-elect

13003
13003

MJE13003VK7(BR3DD13003VK7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features RoHS High voltage capability, high speed switching, wide soa, RoHS compliant. / Applications 110V

0.95. st13002t st13003t.pdf Size:644K _semtech

13003
13003

ST 13002T / 13003T NPN Silicon Power Transistors E CB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage 13002T 300 VCEO(sus) V 13003T 400Collector Emitter Voltage 13002T 600 VCEV V 13003T 700 Emitter Base Voltage VEBO 9 VCollector Current IC 1.5 APeak Collector Current at t = 5 ms ICM 3 ABase C

0.96. st13003h.pdf Size:615K _semtech

13003
13003

ST 13003H NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Emitter Voltage VCES 900 VCollector Emitter Voltage VCEO 500 VEmitter Base Voltage VEBO 9 VCollector Current (f 100 Hz, Duty cycle 50 %)

0.97. st13003.pdf Size:160K _semtech

13003
13003

ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 600 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCo

0.98. 3dd13003u1d.pdf Size:183K _crhj

13003
13003

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

0.99. 3dd13003 v1d.pdf Size:180K _crhj

13003
13003

NPN R 3DD13003 V1D 3DD13003 V1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

0.100. 3dd13003 j6d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 J6D 3DD13003 J6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

0.101. 3dd13003 x1.pdf Size:150K _crhj

13003
13003

NPN R 3DD13003 X1 3DD13003 X1 NPN VCEO 400 V IC 2 A Ptot W TC=25 50

0.102. 3dd13003 u3d.pdf Size:148K _crhj

13003
13003

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

0.103. 3dd13003 f6d.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W

0.104. 3dd13003 e6d.pdf Size:152K _crhj

13003
13003

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

0.105. 3dd13003 d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 D 3DD13003 D NPN VCEO 400 V IC 2.5 A Ptot TC=25 50 W

0.106. 3dd13003 w3d.pdf Size:148K _crhj

13003
13003

NPN R 3DD13003 W3D 3DD13003 W3D VCEO 200 V NPN IC 2 A Ptot TC=25 35 W

0.107. 3dd13003 k8.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W

0.108. 3dd13003 sud.pdf Size:136K _crhj

13003
13003

NPN R 3DD13003 SUD 3DD13003 SUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

0.109. 3dd13003 j7d.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 J7D 3DD13003 J7D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W

0.110. 3dd13003 f3d.pdf Size:150K _crhj

13003
13003

NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W

0.111. 3dd13003 j8d.pdf Size:155K _crhj

13003
13003

NPN R 3DD13003 J8D 3DD13003 J8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

0.112. 3dd13003 s1d.pdf Size:183K _crhj

13003
13003

NPN R 3DD13003 S1D 3DD13003 S1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

0.113. 3dd13003f6d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 F6D 3DD13003 F6D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 50 W

0.114. 3dd13003m6d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

0.115. 3dd13003 f1d.pdf Size:182K _crhj

13003
13003

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

0.116. 3dd13003v6d.pdf Size:107K _crhj

13003
13003

RNPN 3DD13003V6D 1 3DD13003V6D NPN

0.117. 3dd13003x1.pdf Size:150K _crhj

13003
13003

NPN R 3DD13003 X1 3DD13003 X1 NPN VCEO 400 V IC 2 A Ptot W TC=25 50

0.118. 3dd13003e6d.pdf Size:150K _crhj

13003
13003

NPN R 3DD13003 E6D 3DD13003 E6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W

0.119. 3dd13003k8.pdf Size:154K _crhj

13003
13003

NPN R 3DD13003 K8 3DD13003 K8 NPN VCEO 400 V IC 1.8 A Ptot TC=25 60 W

0.120. 3dd13003h3d.pdf Size:317K _crhj

13003
13003

R NPN 3DD13003H3D1 3DD13003H3D NPN VCEO 400 V IC 1.8 A Ptot TC=25

0.121. 3dd13003k6.pdf Size:150K _crhj

13003
13003

NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W

0.122. 3dd13003 m8d.pdf Size:155K _crhj

13003
13003

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

0.123. 3dd13003w6d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 W6D 3DD13003 W6D VCEO 200 V NPN IC 2 A Ptot TC=25 40 W

0.124. 3dd13003j8d.pdf Size:155K _crhj

13003
13003

NPN R 3DD13003 J8D 3DD13003 J8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

0.125. 3dd13003w3d.pdf Size:148K _crhj

13003
13003

NPN R 3DD13003 W3D 3DD13003 W3D VCEO 200 V NPN IC 2 A Ptot TC=25 35 W

0.126. 3dd13003sud.pdf Size:136K _crhj

13003
13003

NPN R 3DD13003 SUD 3DD13003 SUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

0.127. 3dd13003j6d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 J6D 3DD13003 J6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50

0.128. 3dd13003f3d.pdf Size:149K _crhj

13003
13003

NPN R 3DD13003 F3D 3DD13003 F3D VCEO 400 V NPN IC 1.5 A Ptot Tc=25 30 W

0.129. 3dd13003 h8d.pdf Size:152K _crhj

13003
13003

NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W

0.130. 3dd13003h8d.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 H8D 3DD13003 H8D VCEO 400 V NPN IC 1.8 A Ptot TC=25 60 W

0.131. 3dd13003m8d.pdf Size:155K _crhj

13003
13003

NPN R 3DD13003 M8D 3DD13003 M8D NPN VCEO 400 V IC 2 A Ptot W TC=25 60

0.132. 3dd13003 k6.pdf Size:152K _crhj

13003
13003

NPN R 3DD13003 K6 3DD13003 K6 NPN VCEO 400 V IC 1.8 A Ptot TC=25 50 W

0.133. 3dd13003vud.pdf Size:139K _crhj

13003
13003

NPN R 3DD13003 VUD 3DD13003 VUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

0.134. 3dd13003 vud.pdf Size:139K _crhj

13003
13003

NPN R 3DD13003 VUD 3DD13003 VUD VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.5 W

0.135. 3dd13003v1d.pdf Size:183K _crhj

13003
13003

NPN R 3DD13003 V1D 3DD13003 V1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

0.136. 3dd13003 u6d.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W

0.137. 3dd13003u3d.pdf Size:148K _crhj

13003
13003

NPN R 3DD13003 U3D 3DD13003 U3D VCEO 200 V NPN IC 1.8 A Ptot TC=25 30 W

0.138. 3dd13003 u1d.pdf Size:183K _crhj

13003
13003

NPN R 3DD13003 U1D 3DD13003 U1D VCEO 200 V NPN IC 1.8 A Ptot Ta=25 0.8 W

0.139. 3dd13003 h6d.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

0.140. 3dd13003h1d.pdf Size:183K _crhj

13003
13003

NPN R 3DD13003 H1D 3DD13003 H1D VCEO 400 V NPN IC 1.8 A Ptot Ta=25 0.8 W

0.141. 3dd13003 h1d.pdf Size:181K _crhj

13003
13003

NPN R 3DD13003 H1D 3DD13003 H1D VCEO 400 V NPN IC 1.8 A Ptot Ta=25 0.8 W

0.142. 3dd13003h6d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 H6D 3DD13003 H6D VCEO 400 V NPN IC 1.8 A Ptot Tc=25 50 W

0.143. 3dd13003u6d.pdf Size:151K _crhj

13003
13003

NPN R 3DD13003 U6D 3DD13003 U6D VCEO 200 V NPN IC 1.8 A Ptot TC=25 35 W

0.144. 3dd13003 m6d.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 M6D 3DD13003 M6D NPN VCEO 400 V IC 2 A Ptot TC=25 50 W

0.145. 3dd13003f1d.pdf Size:182K _crhj

13003
13003

NPN R 3DD13003 F1D 3DD13003 F1D VCEO 400 V NPN IC 1.5 A Ptot Ta=25 0.8 W

0.146. 3dd13003s1d.pdf Size:183K _crhj

13003
13003

NPN R 3DD13003 S1D 3DD13003 S1D VCEO 200 V NPN IC 1.5 A Ptot Ta=25 0.8 W

0.147. 3dd13003 w6d.pdf Size:153K _crhj

13003
13003

NPN R 3DD13003 W6D 3DD13003 W6D VCEO 200 V NPN IC 2 A Ptot TC=25 40 W

0.148. h13003ad 2.pdf Size:116K _jdsemi

13003
13003

RH13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.149. h13003adl.pdf Size:117K _jdsemi

13003
13003

RH13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.150. s13003ad 3.pdf Size:116K _jdsemi

13003
13003

RP13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.151. s13003dl.pdf Size:118K _jdsemi

13003
13003

RS13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.152. h13003.pdf Size:114K _jdsemi

13003
13003

RH13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.153. 13003b.pdf Size:116K _jdsemi

13003
13003

R13003B www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222F

0.154. s13003ad 2.pdf Size:120K _jdsemi

13003
13003

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.155. h13003d 3.pdf Size:117K _jdsemi

13003
13003

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.156. s13003dl 2.pdf Size:118K _jdsemi

13003
13003

RS13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.157. p13003.pdf Size:113K _jdsemi

13003
13003

RP13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampCharger and Switch-mode power supplies 222FEATURES 2

0.158. h13003 2.pdf Size:114K _jdsemi

13003
13003

RH13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.159. h13003h.pdf Size:111K _jdsemi

13003
13003

RH13003H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1ChargerComputer aided power and Switch-mode power supplies 222FEATURES

0.160. s13003ad-h.pdf Size:116K _jdsemi

13003
13003

RS13003AD-H www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Charger and Switch-mode power supplies 222FEATURES 2 High voltage c

0.161. h13003adl 2.pdf Size:117K _jdsemi

13003
13003

RH13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.162. p13003d.pdf Size:116K _jdsemi

13003
13003

RP13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.163. bu13003d.pdf Size:110K _jdsemi

13003
13003

RBU13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.164. s13003 2.pdf Size:112K _jdsemi

13003
13003

RS13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.165. j13003.pdf Size:113K _jdsemi

13003
13003

RJ13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.166. h13003d 2.pdf Size:116K _jdsemi

13003
13003

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.167. s13003.pdf Size:112K _jdsemi

13003
13003

RS13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.168. h13003dl.pdf Size:117K _jdsemi

13003
13003

RH13003DL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.169. s13003adl.pdf Size:119K _jdsemi

13003
13003

RS13003ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.170. s13003a.pdf Size:111K _jdsemi

13003
13003

RS13003A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.171. s13003a-d.pdf Size:115K _jdsemi

13003
13003

RS13003A-D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 2

0.172. 13003ad.pdf Size:116K _jdsemi

13003
13003

R13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.173. bu13003f.pdf Size:120K _jdsemi

13003
13003

RBU13003F www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.174. s13003ad 4.pdf Size:120K _jdsemi

13003
13003

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.175. h13003ad.pdf Size:117K _jdsemi

13003
13003

RH13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.176. h13003ah.pdf Size:114K _jdsemi

13003
13003

RH13003AH www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Computer aided power and Switch-mode power supplies 222FEATURES 2 H

0.177. s13003ad.pdf Size:121K _jdsemi

13003
13003

RS13003AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.178. s13003a 2.pdf Size:112K _jdsemi

13003
13003

RS13003A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.179. h13003d.pdf Size:117K _jdsemi

13003
13003

RH13003D www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.180. mje13003i.pdf Size:205K _first_silicon

13003
13003

SEMICONDUCTORMJE13003ITECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DIM MILLIMETERSA 2.20 0.2B 1.50 0.15FEATURESc 0.5 0.07Excellent Switching TimesD 6.50 0.151 2 3: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0A e 2.30 typL 7.70 0.2High Collector Voltage : VCBO=700V.A1 1.20 0.05b1 0.8 0.1

0.181. mje13003 to126.pdf Size:98K _first_silicon

13003
13003

SEMICONDUCTOR MJE13003TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.TO-126 FEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A1.BASEHigh Collector Voltage : VCBO=700V.2.COLLECTOR 3.EMITTERMAXIMUM RATING (Ta=25C) 1 2 3 CHARACTERISTIC SYMBOL RATING UNITVC

0.182. mje13003t.pdf Size:169K _first_silicon

13003
13003

SEMICONDUCTORMJE13003TTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.DFEATURESEAExcellent Switching Times: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5A CF GDIM MILLIMETERSHigh Collector Voltage : VCBO=700V.BA 8.3 MAXB 11.30.3C 4.15 TYP1 2 3D 3.20.2E 2.00.2H F 2.80.1IG 3.20.1MAXIMUM RA

0.183. mje13003b.pdf Size:77K _first_silicon

13003
13003

SEMICONDUCTOR MJE13003BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=0.5S(Max.), tf=0.7S(Max.), at IC=1AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_MA

0.184. mje13003d.pdf Size:299K _first_silicon

13003
13003

SEMICONDUCTORMJE13003DTECHNICAL DATASWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION.AICJFEATURESExcellent Switching Times: ton=1.1S(Max.), tf=0.5S(Max.), at IC=1.0ADIM MILLIMETERSA 6 50 0 2High Collector Voltage : VCBO=700V.B 5 60 0 2C 5 20 0 2D 1 50 0 2MAXIMUM RATING (Ta=25C)E 2 70 0 2F 2 30 0 1

0.185. mje13003a.pdf Size:97K _first_silicon

13003
13003

SEMICONDUCTOR MJE13003ATECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORSWITCHING REGULATOR APPLICATION.HIGH VOLTAGE AND HIGH SPEED B CSWITCHING APPLICATION.FEATURESExcellent Switching TimesN DIM MILLIMETERS: ton=1.1S(Max.), tf=0.7S(Max.), at IC=1.5AA 4 70 MAXEKB 4 80 MAXHigh Collector Voltage : VCBO=700V. GC 3 70 MAXDD 0 45E 1 00F 1 27G 0 85H 0 45_

0.186. mjd13003.pdf Size:767K _kexin

13003
13003

SMD Type TransistorsNPN TransistorsMJD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi

0.187. ksu13003h.pdf Size:1990K _kexin

13003
13003

DIP Type TransistorsNPN TransistorsKSU13003HTO-251Unit:mm6.60.22.30.15.350.150.50.05 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=530V High Voltage, High Speed Switching 1 2 30.750.150.80.150.5+0.10.60.1 -0.052.3typ1.20.32.3typ1. Base2. Collector3. Emitter Absolute Maximum Ratings Ta =

0.188. njm13003-1.63.pdf Size:312K _kexin

13003

DIP Type TransistorsNPN TransistorsNJM13003-1.63TO-126Unit:mm8.00 0.30 3.25 0.20 Features High voltage capability3.20 0.10 High speed switching Wide SOA(1.00) (0.50)0.75 0.10 ROHS compliant1.75 0.201.60 0.100.75 0.10#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitter Absol

0.189. 3dd13003.pdf Size:1159K _kexin

13003
13003

SMD Type TransistorsNPN Transistors3DD130031.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=400V0.42 0.10.46 0.1 Power Switching Applications1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emi

0.190. wbn13003b2d.pdf Size:308K _winsemi

13003
13003

WBN13003B2DWBN13003B2DWBN13003B2DWBN13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

0.191. wbn13003a1.pdf Size:468K _winsemi

13003
13003

WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

0.192. sbn13003a.pdf Size:273K _winsemi

13003
13003

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

0.193. sbp13003o.pdf Size:364K _winsemi

13003
13003

SBP13003-OSBP13003-OSBP13003-OSBP13003-OHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

0.194. wbp13003d.pdf Size:395K _winsemi

13003
13003

WBP13003DWBP13003DWBP13003DWBP13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

0.195. wbr13003.pdf Size:329K _winsemi

13003
13003

WBR13003WBR13003WBR13003WBR13003High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Parameter T

0.196. wbr13003b3.pdf Size:313K _winsemi

13003
13003

WBR13003B3WBR13003B3WBR13003B3WBR13003B3High Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for

0.197. wbr13003b2d.pdf Size:317K _winsemi

13003
13003

WBR13003B2DWBR13003B2DWBR13003B2DWBR13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

0.198. wbr13003l2.pdf Size:344K _winsemi

13003
13003

WBR13003L2WBR13003L2WBR13003L2WBR13003L2High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheel

0.199. sbu13003bd.pdf Size:162K _winsemi

13003
13003

SBU13003BDHigh Voltage Fast-Switching NPN Power TransistorFeatures symbol Very High Switching Speed 2.Collector High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Rat

0.200. sbr13003b.pdf Size:406K _winsemi

13003
13003

SBR13003BSBR13003BSBR13003BSBR13003BHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Paramet

0.201. wbn13003b.pdf Size:268K _winsemi

13003
13003

WBN13003BWBN13003BWBN13003BWBN13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter Tes

0.202. wbr13003b2.pdf Size:336K _winsemi

13003
13003

WBR13003B2WBR13003B2WBR13003B2WBR13003B2High Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.Absolute Maximum RatingsSymbol Par

0.203. wbr13003ld.pdf Size:355K _winsemi

13003
13003

WBR13003LDWBR13003LDWBR13003LDWBR13003LDHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability High Voltage Capability Wide Soa Bu

0.204. sbr13003b1.pdf Size:327K _winsemi

13003
13003

SBR13003B1SBR13003B1SBR13003B1SBR13003B1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

0.205. sbr13003bd.pdf Size:281K _winsemi

13003
13003

SBR13003BDSBR13003BDSBR13003BDSBR13003BDHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability1.Base Wide Reverse Bias SOA3.EmitterGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switchin

0.206. sbp13003h.pdf Size:445K _winsemi

13003
13003

SBP13003HSBP13003HSBP13003HSBP13003HHigh Voltage Fast -Switching NPN Power TransistorFeaturesVery High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter

0.207. sbp13003d.pdf Size:560K _winsemi

13003
13003

SBP13003DSBP13003DSBP13003DSBP13003DHigh Voltage Fast -Switching NPN Power TransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics requir

0.208. wbr13003d1.pdf Size:269K _winsemi

13003
13003

WBR13003D1WBR13003D1WBR13003D1WBR13003D1High Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speeds

0.209. wbd13003d.pdf Size:256K _winsemi

13003
13003

WBD13003DWBD13003DWBD13003DWBD13003DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability Wide Reverse Bias SOA 1.Base Built-in free wheeling diode3.EmitterGeneral DescriptionThis Device is designed for high Voltage ,High speedswitching Characteristics required such

0.210. sbr13003d.pdf Size:354K _winsemi

13003
13003

SBR13003DSBR13003DSBR13003DSBR13003DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling

0.211. sbr13003h.pdf Size:202K _winsemi

13003
13003

SBR13003HHigh Voltage FastSwitching NPNPower Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value U

0.212. sbn13003hb.pdf Size:147K _winsemi

13003
13003

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

0.213. wbr13003x.pdf Size:350K _winsemi

13003
13003

WBR13003XWBR13003XWBR13003XWBR13003XHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionGener

0.214. wbr13003d.pdf Size:344K _winsemi

13003
13003

WBR13003DWBR13003DWBR13003DWBR13003DHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThis Device is designed for high voltage, High speedswitc

0.215. sbn13003a1.pdf Size:406K _winsemi

13003
13003

SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

0.216. wbr13003b.pdf Size:316K _winsemi

13003
13003

WBR13003BWBR13003BWBR13003BWBR13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switchingmode power supply.Absolute Maximum RatingsSymbol Parameter Tes

0.217. apt13003di-du-dz.pdf Size:413K _bcdsemi

13003
13003

Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003DGeneral Description FeaturesThe APT13003D is a high voltage, high speed, high High Switching Speedefficiency switching transistor, and it is specially High Collector-Emitter Voltage: 700Vdesigned for off-line switch mode power supplies with Low Costlow output power. High EfficiencyThe APT13003D

0.218. apt13003eu-ez.pdf Size:427K _bcdsemi

13003
13003

Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003EGeneral Description FeaturesThe APT13003E series are high voltage, high speed High Switching Speed switching NPN Power transistors specially designed High Collector-Emitter Voltagefor off-line switch mode power supplies with low out- Low Costput power. Bulk and Ammo Packing TO-92 Package andTO-12

0.219. apt13003lz.pdf Size:330K _bcdsemi

13003
13003

Data SheetHIGH VOLTAGE NPN TRANSISTOR APT13003LGeneral Description FeaturesThe APT13003L series are high voltage, high speed High Switching Speedswitching NPN power transistor specially designed for High Collector-Emitter Voltageoff-line switch mode power supplies with low output Low Costpower. ApplicationsThe APT13003L series is available in TO-92 package. Batt

0.220. apt13003hu-hz.pdf Size:398K _bcdsemi

13003
13003

Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003HGeneral Description FeaturesThe APT13003H series are high voltage, high speed High Switching Speed switching NPN power transistors specially designed High Collector-emitter Voltagefor off-line switch mode power supplies with low out- Low Costput power. ApplicationsThe APT13003H series are available

0.221. apt13003su-sz.pdf Size:411K _bcdsemi

13003
13003

Data SheetHIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003SGeneral Description FeaturesThe APT13003S series are high voltage, high speed High Switching Speed switching transistors specially designed for off-line High Collector-Emitter Voltageswitch mode power supplies with low output power. Low Cost Bulk and Ammo Packing TO-92 Package andThe APT13003S seri

0.222. 3n13003gp.pdf Size:349K _chenmko

13003
13003

CHENMKO ENTERPRISE CO.,LTD3N SMALL FLAT NPN Epitaxial Transistor VOLTAGE 0 Volts CURRENT AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (TO-126)TO-126* PC= 1.5 W (mounted on ceramic substrate).* High saturation current capability..114(2.90).307(7.80).059(1.50).098(2.50).291(7.40)CONSTRUCTION .043(1.10).161(4.1

0.223. mje13003di5.pdf Size:346K _foshan

13003
13003

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

0.224. mje13003g6.pdf Size:219K _foshan

13003
13003

MJE13003G6(3DD13003G6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.225. mje13003dg1.pdf Size:412K _foshan

13003
13003

MJE13003DG1(3DD13003DG1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.226. mje13003i7.pdf Size:215K _foshan

13003
13003

MJE13003I7(3DD13003I7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.227. mje13003m3.pdf Size:194K _foshan

13003
13003

MJE13003M3(3DD13003M3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.228. mje13003vf1.pdf Size:258K _foshan

13003
13003

MJE13003VF1(3DD13003VF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.229. mje13003vg1.pdf Size:237K _foshan

13003
13003

MJE13003VG1(3DD13003VG1) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

0.230. mje13003k5.pdf Size:197K _foshan

13003
13003

MJE13003K5(3DD13003K5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.231. mje13003vg5.pdf Size:244K _foshan

13003
13003

MJE13003VG5(3DD13003VG5) NPN /SILICON NPN TRANSISTOR:Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 400 VVCE

0.232. mje13003f2.pdf Size:193K _foshan

13003
13003

MJE13003F2(3DD13003F2) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.233. mje13003f5.pdf Size:250K _foshan

13003
13003

MJE13003F5(3DD13003F5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.234. mje13003i6.pdf Size:207K _foshan

13003
13003

MJE13003I6(3DD13003I6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.235. mje13003di3.pdf Size:302K _foshan

13003
13003

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 800 V

0.236. mje13003ft.pdf Size:216K _foshan

13003
13003

MJE13003FT(3DD13003FT) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.237. mje13003hk5.pdf Size:284K _foshan

13003
13003

MJE13003HK5(3DD13003HK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.238. mje13003vh1.pdf Size:196K _foshan

13003
13003

MJE13003VH13DD13003VH1 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

0.239. mje13003hn6.pdf Size:243K _foshan

13003
13003

MJE13003HN6(3DD13003HN6) NPN /SILICON NPN TRANSISTOR : Purpose: For switching power supply and other power switching circuit. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 1400 V CBO V 800 V CEO V 9 V EBO I 1.5 A C P (Ta=25) 1.25 W CP

0.240. mje13003k8.pdf Size:202K _foshan

13003
13003

MJE13003K8(3DD13003K8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.241. mje13003h6.pdf Size:191K _foshan

13003
13003

MJE13003H6(3DD13003H6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.242. mje13003m6.pdf Size:189K _foshan

13003
13003

MJE13003M6(3DD13003M6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.243. mje13003l3.pdf Size:286K _foshan

13003
13003

MJE13003L3(3DD13003L3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.244. mje13003dk7.pdf Size:244K _foshan

13003
13003

MJE13003DK7(3DD13003DK7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.245. mje13003m1.pdf Size:182K _foshan

13003
13003

MJE13003M1(3DD13003M1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.246. mje13003dk5.pdf Size:246K _foshan

13003
13003

MJE13003DK5(3DD13003DK5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.247. mje13003j1.pdf Size:273K _foshan

13003
13003

MJE13003J1(3DD13003J1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.248. mje13003g1.pdf Size:212K _foshan

13003
13003

MJE13003G1(3DD13003G1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.249. mje13003di1.pdf Size:291K _foshan

13003
13003

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.250. mje13003i1.pdf Size:200K _foshan

13003
13003

MJE13003I1(3DD13003I1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.251. mje13003f6.pdf Size:200K _foshan

13003
13003

MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.252. mje13003vn5.pdf Size:384K _foshan

13003
13003

MJE13003VN5(3DD13003VN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.253. mje13003dk1.pdf Size:238K _foshan

13003
13003

MJE13003DK1(3DD13003DK1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.254. mje13003l5.pdf Size:283K _foshan

13003
13003

MJE13003L5(3DD13003L5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.255. mje13003n8.pdf Size:258K _foshan

13003
13003

MJE13003N8(3DD13003N8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.256. mje13003lf5.pdf Size:309K _foshan

13003
13003

MJE13003LF5(3DD13003LF5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.257. mje13003vh5.pdf Size:203K _foshan

13003
13003

MJE13003VH53DD13003VH5 NPN /SILICON NPN TRANSISTOR RoHS Purpose:High voltage capability,high speed switching,wide soa,RoHS compliant. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast.

0.258. mje13003h1.pdf Size:195K _foshan

13003
13003

MJE13003H1(3DD13003H1) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 600 VVCEO

0.259. mje13003k7.pdf Size:204K _foshan

13003
13003

MJE13003K7(3DD13003K7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.260. mje13003vk5.pdf Size:232K _foshan

13003
13003

MJE13003VK5(3DD13003VK5) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

0.261. mje13003g5.pdf Size:219K _foshan

13003
13003

MJE13003G5(3DD13003G5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.262. mje13003l1.pdf Size:277K _foshan

13003
13003

MJE13003L1(3DD13003L1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.263. mje13003lf1.pdf Size:251K _foshan

13003
13003

MJE13003LF1(3DD13003LF1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.264. mje13003k4.pdf Size:207K _foshan

13003
13003

MJE13003K4(3DD13003K4) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.265. mje13003n5.pdf Size:257K _foshan

13003
13003

MJE13003N5(3DD13003N5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.266. mje13003k3.pdf Size:206K _foshan

13003
13003

MJE13003K3(3DD13003K3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.267. mje13003dk3.pdf Size:238K _foshan

13003
13003

MJE13003DK3(3DD13003DK3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.268. mje13003vn7.pdf Size:389K _foshan

13003
13003

MJE13003VN7(3DD13003VN7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V

0.269. mje13003f1.pdf Size:192K _foshan

13003
13003

MJE13003F1(3DD13003F1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.270. mje13003vi5.pdf Size:190K _foshan

13003
13003

MJE13003VI53DD13003VI5 NPN /SILICON NPN TRANSISTOR Purpose:High voltage capability,high speed switching,wide SOA. 110V Features:Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. /Absolute maximum ratings(Tc=25

0.271. mje13003j1g.pdf Size:274K _foshan

13003
13003

MJE13003J1G(3DD13003J1G) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.272. mje13003h5.pdf Size:189K _foshan

13003
13003

MJE13003H5(3DD13003H5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.273. mje13003vk3.pdf Size:230K _foshan

13003
13003

MJE13003VK3(3DD13003VK3) NPN /SILICON NPN TRANSISTOR RoHS Purpose: High voltage capability, high speed switching, wide soa, RoHS compliant. 110V Features: Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.

0.274. mje13003h3.pdf Size:191K _foshan

13003
13003

MJE13003H3(3DD13003H3) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.275. mje13003dg5.pdf Size:428K _foshan

13003
13003

MJE13003DG5(3DD13003DG5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700

0.276. mje13003k6.pdf Size:199K _foshan

13003
13003

MJE13003K6(3DD13003K6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 600 V

0.277. mje13003vi1.pdf Size:218K _foshan

13003
13003

MJE13003VI1 3DD13003VI1 NPN /SILICON NPN TRANSISTOR 110V Purpose: Suitable for 110V circuit mode,fluorescent lamp,electronic ballast. Features: High voltage capability,high speed switching,wide SOA. /Absolute maximum ratings(

0.278. mje13003e1.pdf Size:290K _foshan

13003
13003

MJE13003E1(3DD13003E1) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.279. mje13003m7.pdf Size:197K _foshan

13003
13003

MJE13003M7(3DD13003M7) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.280. mje13003m8.pdf Size:191K _foshan

13003
13003

MJE13003M8(3DD13003M8) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.281. mje13003m5.pdf Size:187K _foshan

13003
13003

MJE13003M5(3DD13003M5) NPN /SILICON NPN TRANSISTOR: Purpose: High frequency electronic lighting ballast applicationsconverters, inverters,switching regulators, etc./Absolute maximum ratings(Ta=25) Symbol Rating UnitVCBO 700 VVCEO

0.282. mje13003dn5.pdf Size:261K _foshan

13003
13003

MJE13003DN5(3DD13003DN5) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V

0.283. mje13003l6.pdf Size:284K _foshan

13003
13003

MJE13003L6(3DD13003L6) NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 900 V

0.284. ksb13003h.pdf Size:917K _semihow

13003
13003

KSB13003H SEMIHOW REV.A0,Oct 2007 KSB13003HKSB13003H High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. Emitte

0.285. ksb13003c.pdf Size:986K _semihow

13003
13003

KSB13003C SEMIHOW REV.A0, January 2012 KSB13003CKSB13003C High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector 3. E

0.286. ksh13003a.pdf Size:366K _semihow

13003
13003

KSH13003AKSH13003A SEMIHOW REV.A1,Jan 2008KSH130003AKSH13003AHigh Voltage Switch Mode Applicationsgg pp High Speed Switching Suitable for Switching Regulator and Motor Control1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted30 WattsTO-220CHARACTERISTICS SYMBOL RATING UNIT1. Base2. CollectorCollector-Bas

0.287. ksb13003a.pdf Size:494K _semihow

13003
13003

KSB13003AKSB13003A SEMIHOW REV.A1,Oct 2007KSB130003AKSB13003AHigh Voltage Switch Mode Applicationgg pp High Speed Switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Base2. Collector3. EmitterCollector-B

0.288. ksc13003a.pdf Size:211K _semihow

13003
13003

KSC13003AKSC13003A SEMIHOW REV.A1,Oct 2007KSC130003AKSC13003ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted20 WattsTO-1

0.289. ksd13003e.pdf Size:611K _semihow

13003
13003

KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum

0.290. ksb13003ar.pdf Size:528K _semihow

13003
13003

KSB13003ARKSB13003AR SEMIHOW REV.A2,Oct 2007KSB130003ARKSB13003ARHigh Voltage Switch Mode Application High Speed Switching Suitable for Electronic Ballast up to 21W150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless

0.291. ksu13003er.pdf Size:611K _semihow

13003
13003

KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M

0.292. ksu13003e.pdf Size:611K _semihow

13003
13003

KSD13003E KSU13003E SEMIHOW REV.A0,July 2011 KSD13003E/KSU13003EKSD13003E/KSU13003E High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum

0.293. ksg13003ar.pdf Size:588K _semihow

13003
13003

KSG13003AR SEMIHOW REV.A0,Mar 2009KSG13003ARKSG13003ARSwitch Mode series NPN silicon Power Transistor High voltage, high speed power switching1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.5 WattsTO-92LCHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collector3. BaseCollector-Base Voltage VCBO 700 VCollector

0.294. ksd13003er.pdf Size:611K _semihow

13003
13003

KSD13003ER KSU13003ER SEMIHOW REV.A0,July 2011 KSD13003ER/KSU13003ERKSD13003ER/KSU13003ER High Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5) 1.5 Amperes NPN Silicon Power Transistor Absolute M

0.295. ksc13003h.pdf Size:459K _semihow

13003
13003

KSC13003H SEMIHOW REV.A1,Oct 2007 KSC13003HKSC13003H Switch Mode series NPN silicon Power Transistor - High voltage, high speed power switching - Suitable for switching regulator, inverters motor controls 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 20 Watts TO-126 CHARACTERISTICS SYMBOL RATING UNIT 1. Base

0.296. ksb13003er.pdf Size:323K _semihow

13003
13003

KSB13003ERKSB13003ER SEMIHOW REV.A0,Apr 2008KSB130003ERKSB13003ERHigh Voltage Switch Mode Application High Voltage, High Speed Switching Suitable for Switching regulator, Inverters motor controls150 Max Operating temperature 150 Max. Operating temperature 8KV ESD proof at HBM (C=100, R=1.5)1.5 AmperesNPN Silicon Power Transistor Absolute M

0.297. ksb13003hr.pdf Size:443K _semihow

13003
13003

KSB13003HRKSB13003HR SEMIHOW REV.A0,Oct 2007KSB130003HRKSB13003HRHigh Voltage Switch Mode Applicationgg pp High voltage, High speed power switching Suitable for Electronic Ballast up to 21W1.5 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted1.1 WattsTO-92CHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collect

0.298. ksu13003hr.pdf Size:828K _semihow

13003
13003

KSU13003HR SEMIHOW REV.A0,July 2011 KSU13003HRKSU13003HR Switch Mode series NPN silicon Power Transistor High Voltage, High Speed Switching Suitable for switching regulator, inverters motor controls 2 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 25 Watts TO-251 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter

0.299. ksb13003cr.pdf Size:985K _semihow

13003
13003

KSB13003CR SEMIHOW REV.A0, January 2012 KSB13003CRKSB13003CR High Voltage Switch Mode Application High voltage, High speed power switching Suitable for Electronic Ballast up to 21W 1.5 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 1.1 Watts TO-92 CHARACTERISTICS SYMBOL RATING UNIT 1. Emitter 2. Collector

0.300. sbr13003a.pdf Size:460K _semiwell

13003
13003

SBR13003ASemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-126This devices is designed for high voltage, high speed s

0.301. sbp13003.pdf Size:160K _semiwell

13003
13003

SBP13003SemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector- Very High Switching Speed - Minimum Lot-to-Lot hFE Variation1.Base - Short storge time- Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-220This devices is designed for high voltage, high speed switchingcharacteristic,especially suitable for ba

0.302. alj13003.pdf Size:104K _sunroc

13003

SUNROCALJ13003 TRANSISTOR(NPN)FEATURESpower switching applicationsMAXIMUM RATINGS(Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current-Continuous 1.2 APC Collector Power Dissipation 25 WTJ Junction Temperature 150 Tstg Storage Temperature -55

0.303. tsl13003.pdf Size:596K _taitron

13003
13003

Epitaxial Planar Transistor (NPN) TSL13003 Epitaxial Planar Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor Suitable for Lighting, Switching Regulator and Motor Control RoHS compliance TO-92 Mechanical Data Case: TO-92, Plastic Package Terminals: Solderable per MIL-STD-202G, Method 208 Weight: 0.18 gram Maximum Ratings (T =25C unless note

0.304. mjd13003.pdf Size:235K _inchange_semiconductor

13003
13003

isc Silicon NPN Power Transistor MJD13003DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are particularly suited for115 and 220V switchmode applications such as switchingregulato

0.305. mje13003.pdf Size:169K _inchange_semiconductor

13003
13003

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13003 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION1 Base Collector;c

0.306. mje13003d.pdf Size:128K _inchange_semiconductor

13003
13003

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION High Voltage Capability High Speed Switching Wide Area of Safe Operation APPLICATIONS Fluorescent lamp Electronic ballast Electronic transformer Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 7

0.307. mje13003a.pdf Size:213K _inchange_semiconductor

13003
13003

isc Silicon NPN Power Transistor MJE13003ADESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.0(Max) @ I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are p

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top