A1300 datasheet и подбор замены

 ..1. Size:222K  fgx
 a1300.pdf 

A1300 PNP silicon APPLICATION Medium Power Amplifier Application. MAXIMUM RATINGS Ta 25 PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector Power Dissipation PC 750 mW Junction Temperature TJ 150 Storage Tempera

 0.1. Size:206K  toshiba
 2sa1300.pdf 

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity h = 140 600 (V = -1 V, I = -0.5 A) FE (1) CE C h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage V = -0.5 V (max) CE (sat) (I = -2 A,

 0.2. Size:194K  fairchild semi
 fja13009.pdf 

October 2008 FJA13009 High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode Applications TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 V CEO VEBO Emitter-Base Voltage 9 V IC Collec

 0.3. Size:50K  onsemi
 fja13009.pdf 

FJA13009 High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor Control TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Co

 0.4. Size:91K  utc
 2sa1300.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE * h =140-600, (V = -1V,I = -0.5A) FE(1) CE C * h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C * Low Saturation Voltage * V =

 0.5. Size:395K  secos
 2sa1300.pdf 

2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil

 0.6. Size:405K  jiangsu
 2sa1300.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal

 0.7. Size:176K  lge
 2sa1300.pdf 

2SA1300(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co

 0.8. Size:155K  cystek
 bta1300a3.pdf 

Spec. No. C816A3 Issued Date 2003.04.15 CYStech Electronics Corp. Revised Date Page No. 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT) BTA1300A3 Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent hFE linearity. HFE(1)=140 600(VCE=-1V,IC=-0.5A) H

 0.9. Size:585K  can-sheng
 2sa1300.pdf 

TO-92 Plastic-Encapsulate Transistors 2SA1300 2SA1300 2SA1300 TRANSISTOR (PNP) 2SA1300 FEATURES FEATURES FEATURES FEATURES TO-92 TO-92 TO-92 TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity Low saturation voltag

 0.10. Size:374K  feihonltd
 fha13009a.pdf 

TRANSISTOR FHA13009A MAIN CHARACTERISTICS FEATURES IC 12A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 100W High reliability RoHS RoHS product APPLICATIONS Electronic ballasts High frequency sw

 0.11. Size:180K  sunroc
 alja1300.pdf 

SUNROC ALJA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current gain and excellent hFE linearity 1. EMITTER Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. BASE Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V 1 2 3 VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -