Справочник транзисторов. A1300

 

Биполярный транзистор A1300 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: A1300
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.75 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 50 pf
   Статический коэффициент передачи тока (hfe): 140
   Корпус транзистора: TO92

 Аналоги (замена) для A1300

 

 

A1300 Datasheet (PDF)

 ..1. Size:222K  fgx
a1300.pdf

A1300

A1300 PNP silicon APPLICATIONMedium Power Amplifier Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO -10 VEmitter-base voltage VEBO -6 VCollector current IC -2 ACollector Power Dissipation PC 750 mWJunction Temperature TJ 150Storage Tempera

 0.1. Size:206K  toshiba
2sa1300.pdf

A1300 A1300

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage: V = -0.5 V (max) CE (sat)(I = -2 A,

 0.2. Size:194K  fairchild semi
fja13009.pdf

A1300 A1300

October 2008FJA13009High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode ApplicationsTO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 VCEO VEBO Emitter-Base Voltage 9 V IC Collec

 0.3. Size:50K  onsemi
fja13009.pdf

A1300 A1300

FJA13009High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Co

 0.4. Size:91K  utc
2sa1300.pdf

A1300 A1300

UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE* h =140-600, (V = -1V,I = -0.5A) FE(1) CE C* h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C* Low Saturation Voltage * V =

 0.5. Size:395K  secos
2sa1300.pdf

A1300 A1300

2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil

 0.6. Size:405K  jiangsu
2sa1300.pdf

A1300 A1300

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA1300 TRANSISTOR (PNP) TO-92FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal

 0.7. Size:176K  lge
2sa1300.pdf

A1300 A1300

2SA1300(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co

 0.8. Size:155K  cystek
bta1300a3.pdf

A1300 A1300

Spec. No. : C816A3 Issued Date : 2003.04.15 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT)BTA1300A3Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent hFE linearity. HFE(1)=140600(VCE=-1V,IC=-0.5A) H

 0.9. Size:585K  can-sheng
2sa1300.pdf

A1300 A1300

TO-92 Plastic-Encapsulate Transistors2SA13002SA13002SA1300 TRANSISTOR (PNP)2SA1300FEATURESFEATURESFEATURESFEATURESTO-92TO-92TO-92TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearityLow saturation voltag

 0.10. Size:374K  feihonltd
fha13009a.pdf

A1300 A1300

TRANSISTOR FHA13009A MAIN CHARACTERISTICS FEATURES IC 12A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 100W High reliability RoHS RoHS product APPLICATIONS Electronic ballasts High frequency sw

 0.11. Size:180K  sunroc
alja1300.pdf

A1300

SUNROC ALJA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current gain and excellent hFE linearity 1. EMITTER Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. BASE Symbol Parameter Value UnitsVCBO Collector-Base Voltage -20 V 1 2 3 VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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