A1300 Datasheet, Equivalent, Cross Reference Search

A1300 PNP silicon APPLICATIONMedium Power Amplifier Application.MAXIMUM RATINGSTa25PARAMETER SYMBOL RATING UNITCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO -10 VEmitter-base voltage VEBO -6 VCollector current IC -2 ACollector Power Dissipation PC 750 mWJunction Temperature TJ 150Storage Tempera

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage: V = -0.5 V (max) CE (sat)(I = -2 A,

October 2008FJA13009High Speed Switching Suitable for Switching Regulator and Motor Control High Voltage Switch Mode ApplicationsTO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings Units VCBO Collector-Base Voltage 700 V V Collector-Emitter Voltage 400 VCEO VEBO Emitter-Base Voltage 9 V IC Collec

FJA13009High Voltage Switch Mode Applications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Co

UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE* h =140-600, (V = -1V,I = -0.5A) FE(1) CE C* h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C* Low Saturation Voltage * V =

2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA1300 TRANSISTOR (PNP) TO-92FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal

2SA1300(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co

Spec. No. : C816A3 Issued Date : 2003.04.15 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT)BTA1300A3Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent hFE linearity. HFE(1)=140600(VCE=-1V,IC=-0.5A) H

TO-92 Plastic-Encapsulate Transistors2SA13002SA13002SA1300 TRANSISTOR (PNP)2SA1300FEATURESFEATURESFEATURESFEATURESTO-92TO-92TO-92TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearityLow saturation voltag

TRANSISTOR FHA13009A MAIN CHARACTERISTICS FEATURES IC 12A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 100W High reliability RoHS RoHS product APPLICATIONS Electronic ballasts High frequency sw

SUNROC ALJA1300 TRANSISTOR (PNP) TO-92 FEATURES High DC Current gain and excellent hFE linearity 1. EMITTER Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. BASE Symbol Parameter Value UnitsVCBO Collector-Base Voltage -20 V 1 2 3 VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -