Справочник транзисторов. APT27Z

 

Биполярный транзистор APT27Z Даташит. Аналоги


   Наименование производителя: APT27Z
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.8 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 6
   Корпус транзистора: TO92
 

 Аналог (замена) для APT27Z

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APT27Z Datasheet (PDF)

 ..1. Size:313K  diodes
apt27z.pdfpdf_icon

APT27Z

A Product Line ofDiodes IncorporatedGreenAPT27450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO92 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per MIL-S

 9.1. Size:249K  microsemi
apt27ga90bd15.pdfpdf_icon

APT27Z

APT27GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 9.2. Size:258K  microsemi
apt27ga90sd15.pdfpdf_icon

APT27Z

APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C

 9.3. Size:118K  microsemi
apt27ga90k.pdfpdf_icon

APT27Z

APT27GA90K 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BC307VI | CD9018I | PDTA143ZM | BA16P25A | MJH6285 | BF463EA

 

 
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