APT27Z. Аналоги и основные параметры

Наименование производителя: APT27Z

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.8 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 0.8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 6

Корпус транзистора: TO92

 Аналоги (замена) для APT27Z

- подборⓘ биполярного транзистора по параметрам

 

APT27Z даташит

 ..1. Size:313K  diodes
 apt27z.pdf pdf_icon

APT27Z

A Product Line of Diodes Incorporated Green APT27 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case TO92 BVCES > 700V Case Material Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals Matte Tin Finish; Solderable per MIL-S

 9.1. Size:249K  microsemi
 apt27ga90bd15.pdf pdf_icon

APT27Z

APT27GA90BD15 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 9.2. Size:258K  microsemi
 apt27ga90sd15.pdf pdf_icon

APT27Z

APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C

 9.3. Size:118K  microsemi
 apt27ga90k.pdf pdf_icon

APT27Z

APT27GA90K 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220 through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90K VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: APT13005SI, APT13005STF, APT13005SU, APT13005T, APT13005TF, APT17N, APT17Z, APT27HZ, A940, PN100A, 2SB1443, 2SC5856, 3DD5036, H669A, H9014, MN2488, NTE106