Биполярный транзистор APT27Z - описание производителя. Основные параметры. Даташиты.
Наименование производителя: APT27Z
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 450 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 6
Корпус транзистора: TO92
APT27Z Datasheet (PDF)
apt27z.pdf
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A Product Line ofDiodes IncorporatedGreenAPT27450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO92 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per MIL-S
apt27ga90bd15.pdf
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APT27GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
apt27ga90sd15.pdf
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APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C
apt27ga90k.pdf
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APT27GA90K 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle
apt27hz.pdf
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Data SheetHIGH VOLTAGE NPN TRANSISTOR APT27HGeneral Description FeaturesThe APT27H series are high voltage, high speed High Switching Speedswitching NPN power transistor specially designed for High Collector-Emitter Voltageoff-line switch mode power supplies with low output Low Costpower. ApplicationsThe APT27H is available in TO-92 package. Battery Chargers for
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
![APT27Z](https://alltransistors.com/images/us.png)
![APT27Z](https://alltransistors.com/images/es.png)
![APT27Z](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS