APT27Z
Datasheet, Equivalent, Cross Reference Search
Type Designator: APT27Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8
W
Maximum Collector-Base Voltage |Vcb|: 700
V
Maximum Collector-Emitter Voltage |Vce|: 450
V
Maximum Emitter-Base Voltage |Veb|: 9
V
Maximum Collector Current |Ic max|: 0.8
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package:
TO92
APT27Z
Transistor Equivalent Substitute - Cross-Reference Search
APT27Z
Datasheet (PDF)
..1. Size:313K diodes
apt27z.pdf
A Product Line ofDiodes IncorporatedGreenAPT27450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data BVCEO > 450V Case: TO92 BVCES > 700V Case Material: Molded Plastic, "Green" Molding Compound; UL BVEBO > 9V Flammability Classification Rating 94V-0 IC = 0.8A high Continuous Collector Current Terminals: Matte Tin Finish; Solderable per MIL-S
9.1. Size:249K microsemi
apt27ga90bd15.pdf
APT27GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT27GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
9.2. Size:258K microsemi
apt27ga90sd15.pdf
APT27GA90BD15 APT27GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C
9.3. Size:118K microsemi
apt27ga90k.pdf
APT27GA90K 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT27GA90KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle
9.4. Size:340K bcdsemi
apt27hz.pdf
Data SheetHIGH VOLTAGE NPN TRANSISTOR APT27HGeneral Description FeaturesThe APT27H series are high voltage, high speed High Switching Speedswitching NPN power transistor specially designed for High Collector-Emitter Voltageoff-line switch mode power supplies with low output Low Costpower. ApplicationsThe APT27H is available in TO-92 package. Battery Chargers for
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